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21.
Thermal Characterization of 1.3 μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on Spectroscopy Method 总被引:1,自引:1,他引:0
An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed. 相似文献
22.
红外热成象技术可以有效地用于股骨头坏死疾病的诊断和针刺治疗效果的评价,效果优于其它常规方法。 相似文献
23.
本文报导了LEC法半绝缘砷化镓单晶中含碳量对SI-GaAs热稳定性的影响。在800℃以上退火,发现当晶体中C含量大于1.5×10~(16)cm~(-3)时,SI-GaAs的热稳定性变差;而C含量小于5×10~(15)cm~(-3)时,通常表现出良好的热稳定性。 相似文献
24.
本征吸除硅片特性研究 总被引:1,自引:0,他引:1
本文描述硅本征吸杂片的特性参数,如吸除区宽度、洁净度,氧沉淀密度、MOS电容寿命,介绍了表面态密度及残余间隙氧浓度的检测方法和工艺对参数的影响及参数之间的内在联系,文章还实验论证了不同参数水平对器件成品率的影响,建立了以MOS电容寿命为主导的参数控制方法,利用本文提供的控制参数,可使CCD-512器件成品率达60%,以上优品率≥85%。 相似文献
25.
An analysis of the thermodynamics of epitaxy in thin films is presented which includes the effects of the surface stresses
of the free surface and the film-substrate interface. It is shown that these effects, which are usually ignored in the theory
of epitaxy, can have a major influence on both the critical thickness for epitaxy and on the partitioning of the misfit strain
between the volume elastic strain and interface dislocations. 相似文献
26.
27.
The thermal stability and measurement temperature dependence of Schottky contact characteristics on n-GaN using a W2B5/Ti/Au metallization scheme was studied using current-voltage (I-V), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) measurements. The elemental profile obtained from samples annealed at 350 °C showed some titanium diffusion into the gold layer but little other difference from the as-deposited wafer. Annealing at 700 °C produced significant diffusion of titanium. The Schottky barrier height increased with anneal temperature up to 200 °C, reaching a maximum value of 0.65 eV, but decreased at higher annealing temperatures. The reverse breakdown voltage from diodes fabricated using the W2B5-based contacts showed a similar dependence. The reverse current magnitude was larger than predicted by thermionic emission alone. The barrier height showed only minor changes with measurement temperature up to 150 °C. 相似文献
28.
Munshi G. Mustafa 《Pramana》2006,66(4):669-687
We briefly introduce the thermal field theory within imaginary time formalism, the hard thermal loop perturbation theory and
some of its applications to the physics of the quark-gluon plasma, possibly created in relativistic heavy-ion collisions 相似文献
29.
J.E. Lorenzo H. Requardt 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,28(2):185-186
Eur. Phys. J. B 24, 315 (2001) Here we comment on a recently published paper on the presence of a phason contribution in the low temperature heat capacity data of the charge-density-wave compounds K0.3MoO3 and (TaSe4)2I. We have shown that the anomaly in the C
P
/
T
3
data reported by Odin et al. is straightforwardly interpreted in terms of low energy phonon modes resulting from the peculiar topology of these compounds.
Received 21 February 2002 Published online 19 July 2002 相似文献
30.
In this paper the effects of surface roughness and annealing temperature (T) of latex coating films on adhesion are discussed for the different stages of the film formation process. The surface free energy of latex films was assessed in terms of practical work of adhesion (W) (or adherence) using a custom-built adhesion-testing device (ATD), atomic force microscopy (AFM), and contact angle measurements. For preannealed latex films surface roughness averages (Ra) were determined from AFM height images and were related to the values of W obtained from ATD measurements at room temperature. The results obtained using these tests exhibiting surface behavior on different length scales indicate a dependence of the measured adhesion on surface roughness and temperature, as well as on the length scale of the measurements.First preannealed samples were studied, which were obtained by heat treatment above the respective glass transition temperatures (Tg). Increasing the temperature of preannealing resulted in a decrease of the adherence observed in ATD experiments at room temperature. However, on the nanoscale, using AFM, no significant variation of the adherence was observed. This observation can be explained by roughness arguments. Preannealing decreases roughness which results in lower adherence values measured by ATD while for essentially single asperity AFM experiments roughness has an insignificant effect. Specimens were also annealed over a constant period of time (90 min) at different temperatures. At the end of the heat treatment, adhesion was measured at the treatment temperature by ATD. The amplified effect of temperature observed in this case on adherence is attributed to the combination of roughness decrease and increasing test temperature. In a third set of experiments completely annealed samples were studied by ATD as well as by AFM as a function of temperature. With increasing T values ATD showed a decrease in adherence, which is attributed to a decreasing surface free energy of the annealed films at elevated T values. AFM, on the other hand, showed an opposite trend which is assigned to increasing penetration of the tip into the tip/wetting polymer samples versus increasing temperature. Finally, annealing isotherms as a function of time were investigated by ATD in situ at different temperatures. This last set of experiments allowed us to optimize annealing time and temperature to achieve complete curing. 相似文献