反应压力对MOCVD法沉积ZnO薄膜性质的影响

研究了反应压力对金属有机化学气相沉积(MOCVD)技术制备未掺杂ZnO薄膜的微观结构和光电特性影响.X射线衍射(XRD)和扫描电子镜(SEM)的研究结果表明,随着反应压力的降低,ZnO薄膜(002)择优峰的强度呈现相对减弱趋势,并且出现了较强的(110)峰;Hall测量表明,低的反应压力有助于提高薄膜电学特性.200 Pa时制备出的ZnO薄膜具有明显的"类金字塔"状绒面结构,电阻率为1.28×10-2 Ω·cm.实验中沉积的ZnO薄膜在600～2 600 nm内平均透过率超过80%,而短波长范围由于光散射作用,ZnO薄膜的垂直透过率有所下降.     

A density functional study of structural,electronic and optical properties of titanium dioxide: Characterization of rutile,anatase and brookite polymorphs

Study of fundamental physical properties of titanium dioxide (TiO₂) is crucial to determine its potential for different applications, such as study of electronic band gap energy is essential to exploit it for optoelectronics and solar cell technology. We present here investigations pertaining to structural, electronic and optical properties of rutile, anatase and brookite polymorphs of TiO₂ by employing state of the art full potential (FP) linearized (L) augmented plane wave plus local orbitals (APW+lo) approach realized in WIEN2k package and framed within density functional theory (DFT). To incorporate exchange correlation(XC) energy functional/potential part into total energy, these calculations were carried out at the level of PW–LDA, PBE–GGA, WC–GGA, EV–GGA, and mBJ–GGA which are exploited as the manipulated variables in this work. From our computations, the obtained structural parameters results were found to be consistent with the available experimental results. The analysis of electronic band gap structure calculations point to TiO₂ as a semiconducting material in all three phases, whereas band gap character around Fermi level was found to be indirect for anatase, and direct for rutile and brookite phases. Density of state (DOS) profiles showed a substantial degree of hybridation between O 2p and Ti 3d in conduction and valence band regions, illustrating a strong interaction between Ti and O atoms in TiO₂ compund. In addition, our investigations of the optical properties also endorse the interband transitions from O 2p in valence band to Ti 3d in conduction band.     

Optical and electrical properties of copper-doped nano-crystallite CdO thin films

Thin films of Cu-doped CdO (CdO:Cu) with different Cu% content were prepared in high vacuum on glass and Si substrates. The samples were characterised X-ray diffraction (XRD), optical spectroscopy, scanning electron microscope (SEM), and dc-electrical measurements. The XRD study reveals the formation of single crystalline phase CdO:Cu of CdO structure with a preferential [111] orientation. However, with increasing of Cu% content, the crystal structure was gradually deteriorated. SEM study shows formation of granular structure with rice shape grains of average size ∼500 nm. The optical study shows that Cu doping increased the films transparency with a slight blueshift for the bandgap. The calculated optical constants for pure and Cu-doped CdO were analysed with Forouhi–Bloomer (FB), Wemple–Didomenico (WD), and Spitzer–Fan (SF) models. Good agreements were obtained between electrical and optical (through SF model) measurements. The electrical measurements show that the utmost enhancement in mobility (82.5 cm²/V s) and conductivity (1428.6 S/cm) was found with 2.3% Cu sample. The optoelectronic study was analysed through the available BGW and BGN models that show close theoretical to the experimental results. In general, the films of CdO prepared with light Cu doping have optical and electrical characteristics suitable for various applications in material sciences and optoelectronic devices.     

New method to measure whole-wavelength transmittance of TCO substrates for thin-film silicon solar cells

High transmittance of transparent conductive oxide (TCO) substrates is one of the most important factors for achieving high efficiency in thin-film silicon solar cells. Immersion (IM) method with CH₂I₂ liquid is widely used for the evaluation of optical properties (transmittance, reflectance and absorption) for TCO substrates with textured surface in order to reduce the scattering at the TCO surface. However, in order to measure transmittance accurately, three problems have been found. (1) CH₂I₂ liquid itself absorbs the light in short wavelength region. (2) The transmittance around the absorption edge of CH₂I₂ liquids is very sensitive to its amount. (3) Scattering cannot be suppressed when the scattering surfaces are more than 2 surfaces (for example, TCO on reactive ion etching (RIE) processed glass). To overcome these problems, we proposed a new setup to measure optical properties of TCO substrates by holding the samples inside the integral sphere. As the results, we have confirmed that their absorption in all wavelength could be measured accurately and the transmittance measured by the new method was well consistent with the external quantum efficiency (EQE) of the fabricated cell while the transmittance measured with conventional IM method showed differently. Therefore, this new method could be a useful tool to evaluate TCO substrates for thin-film silicon solar cells.     

Effect of Au interlayer thickness on the structural,electrical, and optical properties of GZO/Au/GZO multilayers

We report on the structural, electrical, and optical properties of Ga-doped ZnO/Au/Ga-doped ZnO (GZO/Au/GZO) multilayers as a function of Au interlayer thickness. Aggregated Au islands formed a continuous film as the thickness of the Au interlayer increased from 3 to 12 nm. Consequently, the sheet resistance, resistivity, and optical transmittance decreased with increasing Au interlayer thickness compared to a GZO single layer. However, a relatively high peak transmittance and a high figure of merit were obtained for an Au interlayer thickness of 9 nm. These results showed that the characteristics of GZO/Au/GZO multilayers could be improved by inserting an Au interlayer of optimized thickness. In addition, it indicated that the GZO/Au/GZO multilayer is the most promising candidates for indium free transparent conducting oxides (TCOs).     

Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

High quality transparent conductive ZnO thin films were deposited on quartz glass substrates using pulsed laser deposition (PLD). We varied the growth conditions such as the substrate temperature and oxygen pressure. X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), and atomic force microscopy (AFM) measurements were done on the samples. All films show n-type conduction, the best transparent conductive oxide (TCO) performance (Al-doped ZnO = 1.33 × 10⁻⁴ Ω cm, Ga-doped ZnO = 8.12 × 10⁻⁵ Ω cm) was obtained on the ZnO film prepared at pO₂ = 5 mTorr and T_s = 300 °C.     

Properties of fluorine-doped SnO2 thin films by a green sol–gel method

Fluorine doped tin oxide (FTO) films were fabricated on a glass substrate by a green sol–gel dip-coating process. Non-toxic SnF₂ was used as fluorine source to replace toxic HF or NH₄F. Effect of SnF₂ content, 0–10 mol%, on structure, electrical resistivity, and optical transmittance of the films were investigated using X-ray diffraction, Hall effect measurements, and UV–vis spectra. Structural analysis revealed that the films are polycrystalline with a tetragonal crystal structure. Grain size varies from 43 to 21 nm with increasing fluorine concentration, which in fact critically impacts resultant electrical and optical properties. The 500 °C-annealed FTO film containing 6 mol% SnF₂ shows the lowest electrical resistivity 7.0×10⁻⁴ Ω cm, carrier concentration 1.1×10²¹ cm⁻³, Hall mobility 8.1 cm²V⁻¹ s⁻¹, optical transmittance 90.1% and optical band-gap 3.91 eV. The 6 mol% SnF₂ added film has the highest figure of merit 2.43×10⁻² Ω⁻¹ which is four times higher than that of un-doped FTO films. Because of the promising electrical and optical properties, F-doped thin films prepared by this green process are well-suited for use in all aspects of transparent conducting oxide.     

Enhancement in light extraction efficiency of organic light emitting diodes using double-layered transparent conducting oxide structure

We examined double-layered transparent conducting oxide (TCO) anode structures consisted of zinc-doped indium oxide (IZO) over the gallium-doped zinc oxide (GZO), and IZO over the GZO with electrochemical treatment. In bottom type OLEDs, power efficiency and current efficiency were enhanced by a factor of 1.50 and 1.14 at a current density of 10 mA/cm² in IZO/GZO anode structure, compared to the only IZO anode structure. Due to the reduced sheet resistance of the IZO/GZO TCO surface, the operating voltage of the OLED with IZO/GZO anode structure was lowered, leading to mostly enhance power efficiency. More enhanced in power efficiency and current efficiency by a factor of 1.21 and 1.25 at a current density of 10 mA/cm² were achieved in IZO/GZO anode structure with electrochemical treatment, compared to the IZO/GZO anode structure due to the change of the surface morphology of the GZO and the existence of the nanoporous layer beneath the GZO surface by an electrochemical treatment. In total, double-layered IZO/GZO anode structure with electrochemical treatment was revealed at an enhancement factor of 1.80 in power efficiency and 1.42 in current efficiency, compared to the only IZO anode structure.     

The effect of film thickness and doping content of SnO2:F thin films prepared by ultrasonic spray method

This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO₂:F thin films were deposited at a 350 ℃ pending time (5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO₂:F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 (Ω·cm^-1) for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO₂:F thin films deposited by ultrasonic spray was reported.     

中小企业的桌面虚拟化

桌面虚拟化,或者虚拟桌面基础架构(VDI),日益为越来越多的不同行业、不同规模的公司所采用。桌面虚拟化提供了灵活性、易于访问、支持BYOD(自带设备办公)的部署、提供数据保护与安全、降低TCO(总体拥有成本),并且提高生产力。VDI由ICT行业领导厂家所支持,是下一个十年中将迎来巨大发展的领域之一。