1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

从PZT体系看无铅压电陶瓷的可能应用

总结了主要以(Bi0.5Na0.5)TiO3和NaNbO3为基的无铅压电陶瓷的性能，以Pb(Ti，Zr)TiO3基二元系、三元系压电陶瓷的性能与应用为参考，分析了无铅压电陶瓷可能的器件应用。此外，还对拓宽无铅压电陶瓷应用需要改进的性能提出了建议。     

自对准双扩散MOS器件的阈值电压分析

文章提出了精确描述自对准双扩散MOS器件阀值电压的解析模型，给出了其沟道中杂质的二维分布和源结耗尽层宽度的计算方法；分析了边缘效应对氧化层电容的影响，借助电荷共事模型，建立了反映非均匀沟道中耗尽层电荷变化及其对开启电压影响的阀值电压模型；同时，借助二维仿真器，计算出自对准双扩散MOS器件的阈值电压，其值与解析值相吻合。     

下一代宽带无线的MIMO-STC、Turbo码及OFDM级联传输策略(Ⅰ)

本文在简要回顾MIMO-STC[多输入、多输出(天线)-[空时编码]Turbo码(透平码或增强型反馈码)及OFDM(正交频分多路复用)技术特征基础上,重点论述MIMO-STC与Turbo码及OFDM级联传输技术,及其对下一代宽带无线(NGBW)演进发展具有的突出优势与战略重点性.     

基于支持向量机的多类分类研究

现今流行的分类方法的重要基础是传统的统计学，前提是要有足够的样本，当样本数目有限时容易出现过学习的问题，导致分类效果不理想。引入支持向量机方法，它基于统计学习理论，采用了结构风险最小化原则代替经验风险最小化原则，较好的解决了小样本学习的问题；又由于采用了核函数思想，把非线性空间的问题转换到线性空间，降低了算法的复杂度。对其相关内容包括优化算法及多类分类问题的解决进行了研究，最后用一个实例说明了该方法的可行性和有效性。     

OCT图像散斑的形成机理和清除方法

根据光相干层析成像（OCT）的光学和光电检测系统特点，结合现有的理论模型，分析了OCT成像和散斑形成机理。指出失去相干性的多次散射光部分会被滤波电路排除，散斑是由高散射组织相干长度之内的不同散射截面上的若干具有nπ光程差的相干散射光彼此叠加形成的。最后讨论了消除散斑的方法。     

基于扩展分形和CFAR特征融合的SAR图像目标识别

研究了多信息融合技术在SAR图像目标识别中的应用。将扩展分形特征(Extended Fractal)与双参数恒虚警特征(Double Parameter CFAR)形成的多信息进行融合处理。运用Dempster-Shafer证据理论，在决策层对SAR图像中的像素进行识别分类。实验结果表明通过融合对像素分类的准确性明显好于单特征的检测结果，减少了虚警概率，提高了系统的识别能力。     

整合式有线电视的视频点播配置方法

提出一种视频点播系统传送数据的结构,结合单播与群播两种数据传送的方法,通过动态改变群播与单播的频道分配比例,让大部分的使用者无需等待即可开始观看影片,进而减少整体使用者的等待时间.     

宽工作电压范围单电源CMOS误差放大器

采用0.8μm标准数字CMOS工艺(VTN0=0.836V,VTP0=0.930V),设计并流片验证了具有宽工作电压范围(3～6V),可作SOC系统动态电源管理芯片内部误差放大器应用的单电源CMOS运算放大器。该误差放大器芯核同时具有适合低电压工作,并对工艺参数变化不敏感的优点。对于相同的负载情况,在3V的工作电压下,开环电压增益AD=83.1dB,单位增益带宽GB=2.4MHz,相位裕量Φ=85.2°,电源抑制比PSRR=154.0dB,转换速率Sr=2.2V/μs;在6V工作电压下,AD=85.1dB,GB=2.4MHz,Φ=85.4°,PSRR=145.3dB,Sr=3.4V/μs。     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.