全文获取类型
收费全文 | 3487篇 |
免费 | 505篇 |
国内免费 | 429篇 |
专业分类
化学 | 711篇 |
晶体学 | 19篇 |
力学 | 9篇 |
综合类 | 8篇 |
数学 | 61篇 |
物理学 | 1841篇 |
无线电 | 1772篇 |
出版年
2024年 | 7篇 |
2023年 | 60篇 |
2022年 | 59篇 |
2021年 | 88篇 |
2020年 | 84篇 |
2019年 | 114篇 |
2018年 | 90篇 |
2017年 | 147篇 |
2016年 | 185篇 |
2015年 | 190篇 |
2014年 | 252篇 |
2013年 | 264篇 |
2012年 | 277篇 |
2011年 | 301篇 |
2010年 | 205篇 |
2009年 | 218篇 |
2008年 | 254篇 |
2007年 | 202篇 |
2006年 | 207篇 |
2005年 | 130篇 |
2004年 | 135篇 |
2003年 | 110篇 |
2002年 | 122篇 |
2001年 | 92篇 |
2000年 | 131篇 |
1999年 | 77篇 |
1998年 | 85篇 |
1997年 | 37篇 |
1996年 | 40篇 |
1995年 | 35篇 |
1994年 | 40篇 |
1993年 | 32篇 |
1992年 | 30篇 |
1991年 | 19篇 |
1990年 | 20篇 |
1989年 | 21篇 |
1988年 | 16篇 |
1987年 | 8篇 |
1986年 | 6篇 |
1985年 | 6篇 |
1984年 | 11篇 |
1981年 | 4篇 |
1979年 | 1篇 |
1977年 | 2篇 |
1976年 | 2篇 |
1974年 | 2篇 |
1973年 | 1篇 |
1972年 | 1篇 |
1967年 | 1篇 |
排序方式: 共有4421条查询结果,搜索用时 492 毫秒
31.
运用经典电路理论,对MOS功率管的开关特性、驱动原理进行了分析,导出了应用MOS功率管实现高速大电流开关应遵从的原则和方法,并成功地实现了光脉冲上升时间小于5ns、下降时间小于10ns,驱动电流达10~50AP-P激光器电源的要求. 相似文献
32.
We present a study of the growth kinetics of pentacene monolayer islands on SiO2 in the submonolayer regime by using Atomic Force Microscopy (AFM). Two distinct growth modes, namely correlated growth (CG) and non-correlated growth (NCG), have been identified by Voronoi tesselation. These two modes are characterized by different island growth kinetics. In the case of correlated growth, the average island size 〈A〉 scales with deposition time t i.e. 〈A〉 ∝ t whereas for non-correlated growth, 〈A〉 ∝ t2. The CG and NCG regimes are defined by the level of re-evaporation which determines the capture zones around the islands: Wigner-Seitz cells for CG and coronas of width λD (λD is the mean diffusion distance on SiO2 before re-evaporation) for NCG. A simple model is proposed to reproduce the experimental growth kinetics in both modes. 相似文献
33.
M. Kleiber M. Bode R. Ravli N. Tezuka R. Wiesendanger 《Journal of magnetism and magnetic materials》2002,240(1-3):64-69
The magnetic properties of the Cr(0 0 1) surface have been studied by spin-polarized scanning tunneling spectroscopy (SP-STS). Spatially resolved mapping of the spectroscopic dI/dU signal at an energy close to the spin-polarized Cr(0 0 1) surface state allows the confirmation of the topological antiferromagnetic order of the Cr(0 0 1) surface. It is shown that the presence of screw dislocations leads to the formation of domain walls which exhibit a width of 120–170 nm. A long-period modulation of the SP-STS signal was not observed indicating that the bulk spin-density wave is modified at the surface due to symmetry breaking. 相似文献
34.
S. Takahashi T. Yamashita H. Imamura S. Maekawa 《Journal of magnetism and magnetic materials》2002,240(1-3):100-102
The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τs becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors. 相似文献
35.
R_FN(O )R_F和R_FNO的F113溶液在室温下与一系列的对位取代苯甲醛反应,得到稳定的对位取代苯甲酰基全氟烷基氮氧自由基。由△a_N和△a_F~β的σ单参数相关以及△a_N与σ和σ 双参数相关表明:极性效应是影响氟烷基酰基氮氧自由基中氮原子自旋密度变化的主要因素,而自旋离域效应的影响是很小的。 相似文献
36.
We present a calculation of the electronic Raman cross section for the scattering of light across the energy gap of an antiferromagnetic insulator. The antiferromagnet is described in terms of a spin density wave state for the Hubbard model at half filling. We consider the coupling of the light to the current density and the inverse mass tensor on equal footing. A comparison of the cross section for different scattering geometries is given. 相似文献
37.
InAs/GaSb/AlSb resonant tunneling spin device concepts 总被引:1,自引:0,他引:1
David Z. -Y. Ting Xavier Cartoix 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):350
We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined. 相似文献
38.
39.
A. Elfving G. V. Hansson W. -X. Ni 《Physica E: Low-dimensional Systems and Nanostructures》2003,16(3-4):528
The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BVceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively. 相似文献
40.
W. Husler 《Annalen der Physik》1996,508(5):401-445
Interesting qualitative consequences can arise from the quantum mechanical identity among strongly correlated particles that carry spin. This is demonstrated for properties connected with the low energy excitations in molecular and electronic systems. Spatial permutations among the identical particles are used as the key features. The particular behaviour of rotational tunneling molecules or molecular parts under the influence of dissipation are discussed together with the consequences arising for conversion transitions. The relationship between the thermal shifting of the tunneling line and the conversion rate at low and at elevated temperatures is explicated. The valuable information, that can be extracted from the conversion behaviour after isotopical substitution, is explained in detail. At low temperatures qualitative changes are predicted for the conversion rate by deuteration. Weakly hindered rotors show, also experimentally, drastic isotopic effects. The second part is devoted to finite systems of strongly interacting electrons that appear in semi-conductor nano-structures. The lowest excitation energies are strongly influenced by the interaction. They can be understood and determined starting from the limit of crystallized electrons by introducing localized many particle ‘pocket states’. The energy levels show multiplet structure, in agreement with numerical results. The total electron spin, associated with the low energy excitations, is crucially important for the nonlinear transport properties through quantum dots. It allows for instance to explain the appearance of negative differential conductances. 相似文献