Embedded diagonally implicit Runge–Kutta–Nystrom 4(3) pair for solving special second-order IVPs

In this paper, third-order 3-stage diagonally implicit Runge–Kutta–Nystrom method embedded in fourth-order 4-stage for solving special second-order initial value problems is constructed. The method has the property of minimized local truncation error as well as the last row of the coefficient matrix is equal to the vector output. The stability of the method is investigated and a standard set of test problems are tested upon and comparisons on the numerical results are made when the same set of test problems are reduced to first-order system and solved using existing Runge–Kutta method. The results clearly shown the advantage and the efficiency of the new method.     

片式阻容元件的现状和发展方向

在国外的片式元器件（ＳＭＤ）中，片式阻容元件发展最快，主要表现为片式化率迅速上升，尺寸越来越小，性能越来越好，包装形式多样化和生产管理不断改进。本文综述了国外阻容元件在这些方面的进展，指出了我国的差距，提出了我国如何发展的措施。     

Asymptotic stability of semigroups associated with linear weak dissipative systems with memory

We study the asymptotic behavior of the solutions of a class of linear dissipative integral differential equations. We show in the abstract setting a necessary and sufficient condition to get an exponential decay of the solution. In the case of the lack of exponential decay, we find the polynomial rate of decay of the solution. Some examples are given.     

Stability of the steady state for the Falk model system of shape memory alloys

In this article a stability result for the Falk model system is proven. The Falk model system describes the martensitic phase transitions in shape memory alloys. In our setting, the steady state is a nonlocal elliptic problem. We show the dynamical stability for the linearized stable critical point of the corresponding functional. Copyright © 2007 John Wiley & Sons, Ltd.     

临界可压缩模类与弱Jacobson根

本文讨论临界可压缩模类和结合环的弱Ｊａｃｏｂｓｏｎ根．首先，我们证明了非平凡的临界可压缩模类是素模的特殊类．其次，我们引入结合环的弱Ｊａｃｏｂｓｏｎ根．弱Ｊａｏｎｂｓｏｎ根是特殊根．最后，我们给出有关弱本原环，半弱本原环和弱Ｊａｃｏｂｓｏｎ根环的某些性质．     

一种低压低功耗SRAM/SOI单元设计

提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.     

PIC单片机在激光电源中的应用研究

论述了单片机控制激光电源的原理，提出了产生PWM控制的基本思想及整个控制系统的硬件组成和软件设计方法。     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

内嵌闪存MCU的高性能多通道24位采集系统ADuC845

ADuC845是ADI公司新推出的嵌有单指令周期8052闪存MCU、带两路24位∑ -△A/D、双12位D/A以及两个灵活脉宽调制输出的高性能24位数据采集与处理系统芯片。该芯片的数据处理速度达12MIPS,且设计简单 ,噪声低 ,非常适用于精密仪器仪表。文中详细介绍了该芯片的功能特点和工作原理 ,给出了该芯片的应用方法。     

从数字看发展片式电容器面临的机遇与挑战

采用海关进、出口统计和行业生产统计资料,通过计算、分析,用数字来说明国内发展片式多层陶瓷电容器、片式钽电解电容器、片式铝电解电容器、片式有机薄膜电容器所面临的机遇与挑战,并对其国内市场需求总量、额,国产品在国内市场占有率等做出评估,为有关单位了解片式电容器的发展提供参考,为国产产品更有效地进入国内市场、促进其发展提供依据。