高功率二极管泵浦固体激光器的技术问题和应用前景分析

本文基于近年来的工作，对高功率二极管泵浦固体激光器的一些关键技术问题进行了分析，提出了向更高功率水平发展可行的技术方案，并讨论了应解决的关键问题，最后展望了高功率二极管泵浦固体激光器的应用前景。     

基于整体退火遗传算法的低功耗极性转换

针对n变量逻辑函数在不同极性下所对应REED-MULLER(RM)电路功耗和面积不问的特点,对信号几率传递算法、多输入XOR/AND(异或/与)门的低功耗分解算法和多成份极性转换算法进行了深入研究,成功地将整体退火遗传算法(whole annealing genetic algorithm,WAGA)应用于RM电路最佳极件的搜索.通过对8个MCNC Benchmark测试表明,算法搜索到的最佳极性,其所对应RM电路的SYNOPSYS综合结果,与极性0时相比,功耗、面积和最大延时的平均节省分别达到了77.2%,62.4%和9.2%.     

A low power and low phase-noise 91~96 GHz VCO in 90 nm CMOS

This paper reports a 94 GHz CMOS voltage-controlled oscillator (VCO) using both the negative capacitance (NC) technique and series-peaking output power and phase noise (PN) enhancement technique. NC is achieved by adding two variable LC networks to the source nodes of the active circuit of the VCO. NMOSFET varicaps are adopted as the required capacitors of the LC networks. In comparison with the conventional one, the proposed active circuit substantially decreases the input capacitance (C_in) to zero or even a negative value. This leads to operation (or oscillation) frequency (OF) increase and tuning range (TR) enhancement of the VCO. The VCO dissipates 8.3 mW at 1 V supply. The measured TR of the VCO is 91~96 GHz, close to the simulated (92.1~96.7 GHz) and the calculated one (92.2~98.2 GHz). In addition, at 1 MHz offset from 95.16 GHz, the VCO attains an excellent PN of – 98.3 dBc/Hz. This leads to a figure-of-merit (FOM) of ?188.5 dBc/Hz, a remarkable result for a V- or W-band CMOS VCO. The chip size of the VCO is 0.75 × 0.42 mm², i.e. 0.315 mm².     

Pipeline of Successive Approximation Converters with Optimum Power Merit Factor

In this paper, we present a low power 12 bit 5 MSPS, successive approximation converter architecture using pipeline technique. The converter consumes 4 mW at the Nyquist rate input with 1.8 V power supply. By combination of pipeline and successive architecture, the entire circuit, simulated at the transistor level in a 0.18 μ CMOS process, achieves a FoM (Figure of Merit) of 0.19 pJ/conversion. Jinghua Li was born in 1973. He received the MSEE and BSEE Degree from College of Electronics and information, Shanghai Jiaotong University and Harbin Engineering University in 1997 and 1994 respectively. He is currently pursuing Ph.D degree in Department of Electrical Engineering, Texas A&M University, College Station, TX, USA. In 1997, he joined Bell Laboratory (China), Lucent Technologies as a member of technical staff. He worked on single-chip HDTV decoder IC and Sonet/SDH SoC for various projects in Murray Hill, NJ, USA and Shanghai China. He also finished projects on hardware implementation of Video conference/Phone based on H.263 standard as his master thesis. Since 2000, he has been a research assistant in Analog Mixed Signal center, TAMU. Most currently his research interests are focused on low power analog to digital conversion IC design, CMOS implementation of 10 G/2.5 G clock data recovery IC for high speed serial communications. Franco Maloberti received the Laurea Degree in Physics (Summa cum Laude) from the University of Parma, Parma Italy, in 1968 and the Dr. Honoris Causa degree in electronics from the Instituto Nacional de Astrofisica, Optica y Electronica (Inaoe), Puebla, Mexico in 1996. In 1993 he was a Visiting Professor at ETH-PEL, Zurich. He was Professor of Microelectronics and Head of the Micro Integrated Systems Group University of Pavia, Pavia, Italy and the TI/J.Kilby Analog Engineering Chair Professor at the Texas A&M University. He is currently the Distinguished Microelectronic Chair Professor at University of Texas at Dallas and part-time Professor at the University of Pavia, Italy. His professional expertise is in the design, analysis and characterization of integrated circuits and analogue digital applications, mainly in the areas of switched capacitor circuits, data converters, interfaces for telecommunication and sensor systems, and CAD for analogue and mixed A-D design. He has written more than 250 published papers, three books and holds 15 patents. He was in 1992 recipient of the XII Pedriali Prize for his technical and scientific contributions to national industrial production. He was co-recipient of the 1996 Institute of Electrical Engineers (U.K.) Fleming Premium for the paper “CMOS Triode Transistor Transconductor for high-frequency continuous time filters.” He has been responsible at both technical and management levels for many research programs including ten ESPRIT projects and has served the European Commission as ESPRIT Projects' Evaluator, Reviewer and as European Union expert in many European Initiatives. He served the Academy of Finland on the assessment of electronic research in Academic institutions and on the research programs' evaluations. Dr. Maloberti was Vice-President, Region 8, of the IEEE Circuit and Systems Society from 1995 to 1997 and an Associate Editor of IEEE-Transaction on Circuit and System-II. He received the 1999 IEEE CAS Society Meritorious Service Award, the 2000 CAS Society Golden Jubilee Medal, and the IEEE Millenium Medal. He is the President of the IEEE Sensor Council and member of the Board of Governors of the IEEE CAS Society. He is a member of the Italian Electrothecnical and Electronic Society (AEI), the Editorial Board of Analog Integrated Circuits and Signal Processing, and Fellow of IEEE.     

86.5GHz下输出功率257mW的 W波段GaN MMIC放大器

我们报道了一个三级W波段GaN MMIC功率放大器。考虑到W波段MMIC的耦合效应,所有的匹配电路和偏置电路都是先进行电路仿真以后,再用3D电磁场仿真软件进行系统的仿真。此MMIC功率放大器在频率为86.5GHz下输出功率能达到257mW,相应的功率附加效率(PAE)为5.4%,相应的功率增益为6.1dB。功率密度为459 mW/mm。另外,此MMIC功率放大器在83 GHz到90 GHz带宽下有100mW以上的输出功率。以上特性都是在漏极电压为12V时测试得到。     

直流固态功率控制器控制技术

直流固态功率控制器是智能开关装置,采用功率MOS管作为直流负载接通或断开直流电源的开关器件,能够实现过载、短路、超温等保护功能。通过DC-SSPC对直流负载进行远程控制,可随时获知负载的工作模式和运行状态,具备健康诊断和实时监控功能。主要研究了直流固态功率控制器工作原理及主要关键技术,并通过原理样机验证了直流固态功率控制器设计的可行性。     

采用FPGA的动力锂电池内阻智能检测装置

为了实现对动力锂电池内阻的高精度检测,通过对锂电池内部结构和工作原理进行分析,建立了等效电路模型,并采用交流注入法设计了电池内阻在线智能检测装置。将微小的交变激励电流信号施加在电池两端,同时利用在FPGA平台上设计的正交锁相放大电路测量电池两端产生的响应电压信号,并通过引入圆周模式的CORDIC算法实现矢量运算,大幅提升了数据处理速度,最后根据欧姆定律计算出电池内阻的阻抗幅值和相位角。实验结果表明:设计的内阻智能检测装置能够方便测量出电池在各频段的阻抗谱,且具有较高的测量精度和稳定度,平均误差仅为0.231%,最大偏差也仅为0.452%,可为新能源汽车动力电池的健康诊断提供可靠的技术保障。     

系统芯片中低功耗测试的几种方法

在系统芯片可测试性设计中考虑功耗优化问题是当前国际上新出现的研究领域。在可测试性设计中考虑功耗的主要原因是数字电路在测试方式下的功耗比系统在正常工作方式下高很多。测试期间的功耗会引发系统成本上升，可靠性降低，成品率下降。本文介绍低功耗测试技术中的一些基本概念，对已有的几种主要的降低测试功耗方法进行分析，最后给出一种高性能微处理器的真速低功耗自测试方法。     

宽带高效径向波导基空间功率合成技术

为获得振幅和相位一致性较好的空间功率合成结构,对径向波导电磁场分布进行了理论分析,推导出径向波导内存在TM_(00)主模.根据TM_(00)波电磁场的轴向对称性,提出了径向波导功分器的简化电磁模型和等效电路.并由此研制出了性能良好的X波段159 W固态功率放大器.在整个X波段,无源合成网络的合成效率都大于88%.含单片微波集成电路芯片(MMIC)的整体合成固态功放合成效率在整个MMIC工作频率范围内(11.9～12.3 GHz)大于83%.     

脉冲激光的非相干合成技术研究

为了实现高功率、高光束质量的激光输出,采用脉冲激光同步延时控制技术,将多束脉冲激光按时序合成一束脉冲激光,可用于产生大功率激光源。利用所设计的激光脉冲同步延时控制器,控制各个激光脉冲的时序,使按时序输出的多路激光脉冲依次通过光束合成装置,在空间合成为一束。在实验中将3束脉冲激光束合成,合成效率达到95.8%。结果表明,合束后的脉冲激光功率基本等于各束光相加的总和,同时保持了较好的光束质量。