Design and development of two-dimensional position sensitive photo-detector

Position sensitive photo-detectors (PSDs) utilize the lateral photovoltaic effect to produce an electrical output that varies linearly with the position of a light spot incident on a semiconductor junction. Design, fabrication and characterization of newly developed silicon PSD, which employ the planar technology and double ion implantation with different doses, are described. Shallow and low-doped p-n junction is formed by boron implantation in n-type silicon substrate. The position characteristics of PSD are symmetric to the zero and linear in the 80% of the active area. For a higher resistivity top layer (lower implanted dose), the sensitivity grows up and the linearity gets improved. The influence of the substrate is not substantial for the position characteristics. The response of the sensor, measured by pulsed 15 ns laser, was determined to be about 100 ns. Described PSD has been used in the construction of simple light spot rotational follower.     

锑化镓基半导体激光器高效率光束整形

锑化镓基半导体激光器发光波长为1.8～4微米,因为具有体积小、重量轻和电流驱动等优势,应用范围很广。但是单管激光器并不能提供满足实际应用的激光功率,因此需要将已经成功应用于近红外半导体激光器的光束合成方法移植到中红外波段。在各种光束合成方法中,高效率的光束整形都是重要基础。展示了一种采用多只单管半导体器件的高效率光束整形方法,并在实验中实现了1.94微米波长1.93瓦连续光功率输出,整形效率高于90%。这个光束整形方法可以用于构建更复杂的光谱或相干光束合成。     

Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods

A thin film consisting of a disordered nanorod network of indium tin oxide (ITO) and conventional ITO films are fabricated on gallium nitride (GaN) based-light emitting diodes (LEDs) by electron beam evaporation. The surface morphologies are observed by scanning electron microscopy (SEM). The disordered nanorod network of ITO is grown in vacuum without oxygen. It can be applied directly on the LED as the current spreading film unlike other nanorods which require growth on a conductive layer. The transmittance, current–voltage characteristic, and the dependence of light output power on current are measured for disordered nanorod network ITO LEDs and conventional ITO LEDs, respectively. The measurement results indicate that the nanorod network provides a significant improvement in the light output power of GaN-based LEDs. The influence of the structure of ITO films on the light output power of GaN-based LEDs is discussed.     

格兰-傅科棱镜空气隙厚度的测量

为了测量格兰-傅科空气隙的厚度,分析了棱镜对单模高斯光束的影响,结果表明：透射光束随光束在棱镜端面上的入射角变化呈现周期性的振荡,且振荡特性与入射光的波长、光强分布特性、棱镜结构角及空气隙的厚度有关,对于给定波长的入射单模高斯光束,由于棱镜的结构角在棱镜胶合之前可以精确测得,所以通过分析这种振荡特性便可以得出棱镜空气隙的厚度,据此,设计实验,并测出了成品棱镜空气隙的厚度。     

（英）离子束溅射法制备碳化锗薄膜的红外光学特性和力学特性

采用离子束溅射法通过在CH4和Ar 的混合气体中溅射Ge靶材制备碳化锗(Ge1-xCx)薄膜.分别通过原子力显微镜、拉曼光谱和X射线光电子能谱、傅里叶变换红外光谱以及纳米压痕测试研究了薄膜的表面形貌、化学结构、光学特性和力学特性.同时分析了制备薄膜时的离子源束压和薄膜性质之间的关系.结果表明,薄膜的粗糙度随束压的增大而减小.在较高束压下制备的薄膜含有较少的C元素和较多的Ge-C键.薄膜具有非常好的红外光学特性和力学特性.薄膜在较大波长范围内具有良好的透光性能.C元素含量随着束压的升高而降低,进而导致薄膜的折射率在束压从300 V增大到800 V的过程中逐渐升高.薄膜的硬度大于8 GPa.由于薄膜中的Ge-C键代替了C-C 键和C-Hn键,薄膜的硬度随束压的增加逐渐增加.     

波导HCN激光器输出的EH_(11)模在自由空间中的传播

本文讨论了波导HCN激光器输出的EH_(11)模在自由空间中的传播模式,并与理论进行了比较。在近场,光强的分布明显受到激光器结构上不对称性的影响,其某些特征与Degnan的计算相符;在远场,EH_(11)模的传播近似于高斯光束。因此,对远场激光传播特性的测量是光学系统光路设计的基础。     

太赫兹带状注器件

带状注是指束流截面近似为矩形或椭圆形的电子注,且具有大的宽高比。相对于传统的圆形注,带状注具有很多优点,例如大电流和大互作用面积等。由于太赫兹波具有高频率、宽频带、高传输速率等优点,因此太赫兹科学与技术近年来发展迅速。作为一种新型的真空电子器件,太赫兹带状注器件在高功率、高增益、高效率及小型化方面具有良好的技术优势。但是,带状注在传输过程中易出现Diocotron不稳定性,难以保持长距离稳定的聚焦传输,从而导致带状注的技术优势难以发挥。本文综述了带状注的产生成形方式和聚焦传输方法,以及太赫兹带状注器件的研究进展,同时讨论了它所面临的挑战和未来的发展方向。     

金属栅条掩埋型纳米光栅的设计与制备

An embedded wire-grid nanograting was designed and fabricated for using as a broadband polarizing beam splitter to reflect s-polarized light and transmit p-polarized light. A protected cladding layer of the same material as the grating＇s was deposited on the ridge, whereas the wire-grid is deposited in the grating trenches, which makes it more firm during application. High polarization extinction ratios of above 40 and 20 dB for transmission and reflection, respectively, with a broad wavelength range for the whole optical communication bandwidth （850 -1700 nm） and a wide angular tolerance （〉 ±20 °） are obtained by optimization of the designed structures, and the grating period is 200 nm.     

0.1微米电子束曝光机成像系统的计算

系统介绍了０．１微米电子束曝光机系统的计算工作,并对每步都给出了程序实现的流程图,最终构成了总的程序计算框图。该程序具有一定的通用性,能对任何３级成像系统进行计算,最后对计算结果进行了定性的分析。     

超临界干燥多孔硅的光致发光

对两种不同条件下制备的多孔硅进行了红外透射光谱测量，并对超临界干燥和自然干燥条件下的光致发光光谱进行了对比测量。用高分辨率透射电镜对其结构进行了观察，研究表明多孔硅的发光机理与其制备条件有关。