镓在裸Si系和SiO2/Si系掺杂效应

Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .     

Fe—Silicalite—2催化剂表面CO2加氢反应性能的研究

研究了Ｆｅ／Ｓｉｌｉｃａｌｉｔｅ－２催化剂ＣＯ２加氢低碳烯烃反应性能，利用ＣＯ２－ＴＰＤ，ＣＯ２／Ｈ２－ＴＰＳＲ和ＣＯ／Ｈ２－ＴＰＳＲ表征手段，考察了铁含量及ＭｎＯ助剂对Ｆｅ／Ｓｉｌｉｃａｌｉｔｅ－２催化剂ＣＯ２吸附脱附及加氢反应性能的影响，表明随铁含量增加可提高催化剂对ＣＯ２的吸附能力，有利于提高ＣＯ２加氢反应的转化率。     

H3BO3对BaAl2Si2O8：Eu2+蓝色荧光粉物相组成和发光特性的影响

采用化学共沉淀法一次煅烧工艺合成了BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉.用X射线衍射仪、荧光分光光度计和扫描电镜测试了助熔剂H₃BO₃对BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉物相结构、发光性能、形貌等的影响.研究表明：化学共沉淀法一次煅烧工艺合成的BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉为单相,H₃BO₃的加入使基质结构由六方相转变成单斜相,并引起发射主峰位置和发射强度的变化;BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的发光强度随着H₃BO₃加入量的增加先增强,后减弱,当加入H₃BO₃的质量分数为1.5%时,发光强度最大;H₃BO₃的加入使合成BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的颗粒呈类球形,分布更加均匀,粒度更小. 关键词： 3BO₃')" href="#">H₃BO₃ 2Si₂O₈：Eu²⁺')" href="#">BaAl₂Si₂O₈：Eu²⁺ 发光特性 化学共沉淀法     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.     

Luminescence enhancement by hydrogenation of Si:Er,O

Erbium (Er)- and oxygen (O)-doped Cz–Si was additionally doped with hydrogen, using plasma enhanced chemical vapour deposition. Photoluminescence (PL) spectra show a large enhancement especially for samples treated with solid phase epitaxy before hydrogenation and annealing at 900°C later. Secondary ion mass spectroscopy measurements give evidence for an enhanced diffusion of O and Er at this temperature towards the surface. Etching shows that the PL does not stem from the heavily doped surface layer but from a deeper region with lower Er concentration. This conclusion is supported by the appearance of the so-called “cubic” centre with low solubility. Comparing the PL yield of the hydrogenated samples to that of samples with similar Er volume concentration but without hydrogenation still gives a large enhancement. We thus conclude that hydrogen can enhance the solubility of the cubic centre in Si:Er,O.     

SrTiO3金属-绝缘体-半导体结构的介电与界面特性

采用金属有机分解法在p型Si衬底上制备了SrTiO3（STO）薄膜.研究了STO薄膜金属 绝缘体 半导体(MIS)结构的介电和界面特性.结果表明，STO薄膜显示出优异的介电性能，在10kHz处的介电常数约为105，损耗低于001，这来源于多晶结构和良好的结晶性；MIS结构中的固定电荷密度Nf和界面态密度Dit分别约为15×1012cm-2和(14—35)×1012cm-2eV-1，这主要与Si/STO界面处形成的低介电常数界面层有关. 关键词： SrTiO3薄膜 MIS结构 介电性能 Si/STO界面     

Y(Fe,M)12化合物的电子结构与磁性(M=Nb,Si)

采用新近发展的全势能线性缀加平面波((L)APW) 局域轨道(lo)和广义梯度近似(GGA)密度泛函方法计算了Y(Fe,M)12化合物(M=Nb,Si)的电子结构,得到了相应的总态密度和局域态密度,并分析了替代原子与替代晶位不同引起态密度的变化。根据计算结果预测的居里温度变化与实验结果基本一致。     

Si/Si1−xGex/Si-based quantum wells infrared photodetector operating at 1.55 μm

A quantum well infrared photodetector consisting of self-assembled type II SiGe/Si based quantum wells operating around 1.55 μm at room temperature has been investigated. The Si_1−yGe_y/Si/Si_1−xGe_x/Si/Si_1−yGe_y stack results in a ‘W’ like profiles of the conduction and valence bands strain-compensated in the two low absorption windows of silica fibers infrared photodetectors have been proposed. Such computations have been used for the study of the p-i-n infrared photodetectors operating, around (1.3–1.55 μm) at room temperature. The quantum transport properties of electrons and holes were approved with Schrödinger and kinetic equations resolved self-consistently with the Poisson equation. The theoretical performances of the photodetector were carried out such as the dark current mechanisms, the temperature dependence of normalized dark current and the zero-bias resistance area product (R₀A).     

Density-functional theory study of structures,stabilities, and electronic properties of the Cu2-doped silicon clusters: Comparison with pure silicon clusters

Equilibrium geometric structures, stabilities, and electronic properties of Si_nCu₂ (n=1–8) clusters and pure silicon Si_n (n=3–10) clusters are investigated systematically by exchange-correlation density functional (B3LYP). The optimized geometries show that the most stable isomers have 3D structure for n=2, 4–8, and Cu-substituted Si_n+2 clusters is dominating growth pattern for the Si_nCu₂ clusters. The calculated averaged binding energies, fragmentation energies, second-order difference of energies, and the HOMO–LUMO gaps show that Si₂Cu₂ and Si₅Cu₂ clusters have enhanced relative stabilities and chemical stability than their neighboring clusters. Electronic properties of Si_nCu₂ (n=1–8) clusters are studied by calculating the natural population analysis and electrostatic potential, where the results show that the two copper atoms always possess positive charge and positive potential surround them. In addition, the VIP, VEA and the chemical hardness (η) are also analyzed and compared.