超薄SiO2层的热生长

隧道小孔中超薄ＳｉＯ２的生长是ＥＥＰＲＯＭ电路制造的关键工艺之一。采用ＳＵＰＲＥＭ－Ⅲ工艺模拟程序对超薄ＳｉＯ２的热生长进行了工艺模拟，经过大量的工艺实验及优化，确定了超薄ＳｉＯ２的最佳生长条件，生长出的ＳｉＯ２性能良好，完全可满足ＥＥＰＲＯＭ研制的要求。     

发光二极管的研究现状与发展趋势

Ⅱ－Ⅵ族，Ⅲ－Ⅴ族化全物半导体是制作显示器件的重要材料，随着制作工艺日趋成熟，发光二极管已广泛地应用于 民经济各部门。要方要介绍了国内外发光二有管的研究两头和发展趋势。     

Characterisation of the photocatalyst Pilkington Activ™: a reference film photocatalyst?

Pilkington Glass Activ™ represents a possible suitable successor to P25 TiO₂, especially as a benchmark photocatalyst film for comparing other photocatalyst or PSH self-cleaning films. Activ™ is a glass product with a clear, colourless, effectively invisible, photocatalytic coating of titania that also exhibits PSH. Although not as active as a film of P25 TiO₂, Activ™ vastly superior mechanical stability, very reproducible activity and widespread commercial availability makes it highly attractive as a reference photocatalytic film. The photocatalytic and photo-induced superhydrophilitic (PSH) properties of Activ™ are studied in some detail and the results reported. Thus, the kinetics of stearic acid destruction (a 10⁴ electron process) are zero order over the stearic acid range 4–129 monolayers and exhibit formal quantum efficiencies (FQE) of 0.7×10⁻⁵ and 10.2×10⁻⁵ molecules per photon when irradiated with light of 365±20 and 254 nm, respectively; the latter appears also to be the quantum yield for Activ™ at 254 nm. The kinetics of stearic acid destruction exhibit Langmuir–Hinshelwood-like saturation type kinetics as a function of oxygen partial pressure, with no destruction occurring in the absence of oxygen and the rate of destruction appearing the same in air and oxygen atmospheres. Further kinetic work revealed a Langmuir adsorption type constant for oxygen of 0.45±0.16 kPa⁻¹ and an activation energy of 19±1 kJ mol⁻¹. A study of the PSH properties of Activ™ reveals a high water contact angle (67°) before ultra-bandgap irradiation reduced to 0° after prolonged irradiation. The kinetics of PSH are similar to those reported by others for sol–gel films using a low level of UV light. The kinetics of contact angle recovery in the dark appear monophasic and different to the biphasic kinetics reported recently by others for sol–gel films [J. Phys. Chem. B 107 (2003) 1028]. Overall, Activ™ appears a very suitable reference material for semiconductor film photocatalysis.     

A new semiconducting organic-inorganic nanocomposite, 1,5-diaminonphthalene-saponite intercalation compound

We synthesized a new intercalation compound, 1,5-diaminonaphathalene(DAN)-saponite where intercalated DAN molecules were shown to have a formal charge of +0.67 The measurement of optical diffuse reflectance spectra revealed the formation of electronic bands with a gap of ca. 1 eV suggesting semiconducting behaviour of this system. From ESR measurements, the radical formation in DAN-saponite was confirmed and the spin concentration was determined to be 1 spin per 200 and 300 DAN-molecules at 290 and 7.9 K, respectively. This temperature dependence of the spin density also implies the semiconductive nature of DAN-saponite.     

A theoretical analysis of the TiO2/Sn doped (1 1 0) surface properties

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO₂/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO₂ is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sn, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices.     

立体电视技术进展

电视技术的发展从根本上看就是不断地提高音频和视频质量的过程.电视伴音处理早就进入立体声时代,而且随着数字化技术的应用已进入到丽音时代,而图像的清晰度虽说有了大幅度提高,但仍停留在二维画面上.画面的立体化是电视技术的发展方向之一,文章详细介绍了立体电视及其技术进展.     

GaN材料系列的研究进展

ＧａＮ及其合金作为第三代半导体材料具有一系列优异的物理和化学性质，在光电子器件，高温大功率电子器件及高频微波器件应用方面具有广阔的前景，已成为当前高科技领域的研究重点，论述了这种材料的研究历史与发展现状，物理与化学性质，薄膜的生长方法及在光学电子和微电子器件应用于方面的研究进展。     

GaAlInP发光材料计算的经验公式

根据已经发表的实验数据，针对镓铝铟磷发光材料的提出了一组经验公式及相应的曲线，作为ＧａＡｌＩｎＰ可见光材料设计的依据或参考。     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

全耗尽CMOS／SOI技术的研究进展

ＳＯＩ材料技术的成熟，为功耗低，抗干扰能力强，集成度高，速度快的ＣＭＯＳ／ＳＯＩ器件的研制提供了条件，分析比较了ＣＭＯＳ／ＳＯＩ器件与体硅器件的差异，介绍了国外薄膜全耗尽ＳＯＩ技术的发展和北京大学微电子所的研究成果。