All-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity

A novel scheme for all-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity is proposed and investigated numerically. The results show, for a 2.5 GHz driving pulse train, it can be generated 5-25 GHz repetition rate pulse trains with low clock amplitude jitter, polarization independence and high peak power. Furthermore, the extraction of the clock signal from a pseudorandom bit sequence signal can be realized based on the proposed scheme.     

Polariton gap solitary waves in semiconductor microcavities

We study nonlinear dynamics of optical pulse propagation in the spectral region inside the polariton gap. It is shown that the Kerr nonlinearity can lead to formation of solitary waves in this region of frequencies.     

高压变频器在煤气加压机中的应用

2005年11月份邯郸钢铁厂8万煤气柜外送煤气加压机采用高压变频技术改造。其原因是该加压机外送量波动较大，采用普通阀门调节打回流，将会浪费大量电能，采用变频技术改造后，节能效果非常明显。     

Fabrication and characterization of a PbTe quantum dots multilayer structure

Multilayer PbTe quantum dots (QDs) and SiO₂ were grown by pulsed laser deposition (PLD) and Plasma enhanced chemical vapor deposition (PECVD) techniques. The crystalline structure, QD size and size dispersion were observed by high-resolution transmission electron microscopy (HRTEM) measurements. This technique allows one to grow PbTe QDs as small as 1.8 nm diameter and 0.6 nm size dispersion. The whole structure can be used in a Fabry–Perot cavity for an optical device operating at the mid-infrared region.     

Performance modeling and evaluation of data/voice services in wireless networks

Application-level performance is a key to the adoption and success of the CDMA 2000. To predict this performance in advance, a detailed end-to-end simulation model of a CDMA network is built to include application traffic characteristics, network architecture, network element details using the proposed simulation methodology. We assess the user-perceived application performance when a RAN and a CN adopt different transport architectures such as ATM and IP. To evaluate the user-perceived quality of voice service, we compare the end-to-end packet delay for different vocoder schemes such as G.711, G.726 (PCM), G.726 (ADPCM), and vocoder bypass scheme. By the simulation results, the vocoder bypass scenario shows 30% performance improvement over the others. We also compare the quality of voice service with and without DPS scheduling scheme. We know that DPS scheme keep the voice delay bound even if the service traffic is high. For data packet performance, HTTP v.1.1 shows better performance than that of HTTP v.1.0 due to the pipelining and TCP persistent connection. We may conclude that IP transport technology is better solution for higher FER environment since the packet overhead of IP is smaller than that of ATM for web browsing data traffic, while it shows opposite effect to the small size voice packet in RAN architecture. We show that the 3G-1X EV-DO system gives much better packet delay performance than 3G-1X RTT. The main conclusion is that end-to-end application-level performance is affected by various elements and layers of the network and thus it must be considered in all phases of the development process. Jae-Hyun Kim He received the B.S., M.S., and Ph.D. degrees, all in computer science and engineering, from Hanyang University, Ansan, Korea, in 1991, 1993, and 1996 respectively. In 1996, he was with the Communication Research Laboratory, Tokyo, Japan, as a Visiting Scholar. From April 1997 to October 1998, he was a post-doctoral fellow at the department of electrical engineering, University of California, Los Angeles. From November 1998 to February 2003, he worked as a member of technical staff in Performance Modeling and QoS management department, Bell laboratories, Lucent Technologies, Holmdel, NJ. He has been with the department of electrical engineering, Ajou University, Suwon, Korea, as an assistant professor since 2003. His research interests include QoS issues and cross layer optimization for high-speed wireless communication. Dr. Kim was the recipient of the LGIC Thesis Prize and Samsung Human-Tech Thesis Prize in 1993 and 1997, respectively. He is a member of the Korean Institute of Communication Sciences (KICS), Korea Institute of Telematics and Electronis (KITE), Korea Information Science Society (KISS), and IEEE. Hyun-Jin Lee received the B.S. degree in electrical engineering from Ajou University, Suwon, Korea, in 2004, and is working toward the M.S. degree and Ph. D. degree in electrical engineering at Ajou University. He has been awarded Samsung Human-Tech Thesis Prize in 2004. His research interests QoS, especially network optimization and wireless packet scheduling. He is a member of the KICS. Sung-Min Oh received the B.S. and M. S. degrees in electrical engineering form Ajou University, Suwon, Korea, in 2004, and is working toward the Ph. D. degree in electrical engineering at Ajou University. His research interests QoS performance analysis and 4G network. He is a member of the KICS. Sung-Hyun Cho received his B.S., M.S., and Ph.D. in computer science and engineering from Hanyang University, Korea, in 1995, 1997, and 2001, respectively. From 2001 to 2005, he has been with Samsung Advanced Institute of Technology, where he has been engaged in the design and standardization of MAC and upper layers of B3G, IEEE 802.16e, and WiBro systems. He is currently a MAC part leader in the telecommunication R&D center of Samsung Electronics. His research interests include 4G air interface design, radio resource management, cross layer design, and handoff in wireless systems.     

Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films

Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.     

半导体衬底片的应力损伤及其行为

本文根据实际测量结果,一叙述了半导体衬底制片质量对外延生长的影响。特别是,讨论了在 GaAs、InP 衬底中,产生于切片、研磨和抛光加工过程中的机械损伤的影响。     

利用半导体光放大器进行光脉冲消基座的理论研究

提出了一种利用半导体光放大器(SOA)联合可调谐光滤波器进行高阶孤子压缩消基座的新方法.进行了详尽的理论分析和优化.数值计算表明,在一定条件下,这种方法能够在不展宽脉冲的前提下,对基座进行有效地抑制.     

几种新型的光电器件

描述用ＳＯＩ技术制造的光耦合ＭＯＳ继电器和多量子阱长波和红外探测器，以及集成异质结晶体管和激光二管于一体的高增益，高灵敏的光电子开关器件，文中着重介绍这些器件的结构，制造工和器件特性，并对其进行了讨论。     

SOI全介质隔离与高频互补双极兼容工艺

ＳＯＩ材料的全介质隔离技术与高频互补双极工艺的结合是研制抗辐照能力强、频带宽、速度高的集成运算放大器的理想途径，从实验的角度提出了一种ＳＯＩ材料全介质隔离与高频互补双极工艺兼容的工艺途径。