首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   7242篇
  免费   746篇
  国内免费   522篇
化学   1627篇
晶体学   60篇
力学   206篇
综合类   132篇
数学   2176篇
物理学   2568篇
无线电   1741篇
  2024年   25篇
  2023年   70篇
  2022年   132篇
  2021年   140篇
  2020年   162篇
  2019年   172篇
  2018年   172篇
  2017年   218篇
  2016年   263篇
  2015年   236篇
  2014年   455篇
  2013年   531篇
  2012年   417篇
  2011年   461篇
  2010年   377篇
  2009年   446篇
  2008年   498篇
  2007年   505篇
  2006年   423篇
  2005年   358篇
  2004年   316篇
  2003年   331篇
  2002年   252篇
  2001年   209篇
  2000年   216篇
  1999年   174篇
  1998年   147篇
  1997年   141篇
  1996年   144篇
  1995年   90篇
  1994年   69篇
  1993年   64篇
  1992年   49篇
  1991年   40篇
  1990年   38篇
  1989年   17篇
  1988年   22篇
  1987年   15篇
  1986年   20篇
  1985年   15篇
  1984年   15篇
  1983年   7篇
  1982年   22篇
  1981年   9篇
  1980年   4篇
  1979年   10篇
  1978年   8篇
  1977年   2篇
  1975年   1篇
  1974年   1篇
排序方式: 共有8510条查询结果,搜索用时 546 毫秒
91.
关于折射率对散射光场分布影响的研究   总被引:1,自引:0,他引:1       下载免费PDF全文
根据Mie散射理论,采用理论计算和实验相结合的手法,研究了光散射现象以及散射介质的折射率对散射光场分布的影响.通过对空气中不同折射率的散射介质形成的散射光场光强的实验比较,论证了散射介质折射率的实部变化对散射光强的影响不大,其主要影响是通过对相位的变化来实现的,也即散射介质折射率的虚部变化对光强的影响很大,在实际应用中不可忽略.这一结论对以散射光场的分布为基础的各种研究具有一定的指导意义.  相似文献   
92.
区域技术创新系统评估体系的研究   总被引:5,自引:0,他引:5  
方成 《运筹与管理》2003,12(4):124-127
技术创新对提升企业竞争力、提高综合国力、促进经济增长和国家持续发展非常重要。本在研究了区域经济发展和国家创新系统的相关献基础上,建立了系统、量化的区域技术创新系统评估指标体系,提出了决定区域创新系统技术创新能力的主要因素,并用TOPSIS方法对指标的量化进行了尝试。  相似文献   
93.
The optical properties—reflectivity, real part of the refractive index, absorption coefficient as well as the thermal and electrical conductivity of AlSi-alloy/SiCp composite were measured. The optical parameters and both conductivities decreased with the increase of SiCp particles volume in AlSi-alloy matrix. This decrease was almost linear for the volume fraction of SiCp particle up to 10 vol% of the total mass of the composite. For the 15 vol% of SiCp particles, the departure from linearity is connected with the presence of additional phases in AlSi-alloy/SiCp composite materials. The measured temperature dependencies of optical reflectivity and electrical conductivity for AlSi-alloy/SiCp 15 vol% are of metallic character. Modelling of the interaction of the CO2 laser radiation with AlSi-alloy/SiCp 15 vol% composite should allow to estimate the initiation time at which the surface composite reaches melting temperature.  相似文献   
94.
With the help of the theorem of a fixed point index for A-proper semilinear operators established by Cremins, we get a existence theorem concerning the existence of positive solution for the second order ordinary differential equation of three-point boundary value problems at resonance.  相似文献   
95.
A statistic is found to combinatorially generate the cycle-counting q-hit numbers, defined algebraically by Haglund [Adv. in Appl. Math. 17 (1996) 408–459]. We then define the notion of a cycle-Mahonian pair of statistics (generalizing that of a Mahonian statistic), and show that our newly discovered statistic is part of such a pair. Finally, we note a second example of a cycle-Mahonian pair of statistics which leads us to define the stronger property of being a cycle-Euler–Mahonian pair.  相似文献   
96.
Strong limit-point criteria for singular Hamiltonian differential expressions with complex coefficients are obtained. The main results are extensions of the previous results due to Everitt, Giertz, and Weidmann for scalar differential expressions.

  相似文献   

97.
Image potential resonances on the Sn/Ge(1 1 1) α-phase are investigated by two closely related methods: specular electron reflection and so-called selective electron scattering. Electrons from image resonances are detected on this surface at 120 and 300 K, i.e. below and above the phase transition at about 200 K. The dispersion of the image resonances reveals at these two temperatures equivalent effective electron masses, which are characteristic for this type of electronic surface states. The results of the two methods are consistent according to the similarity of the scattering processes. Changes in the loss peak intensity with the annealing temperature are assigned to the surface quality and are reflected by characteristic photoemission intensities.  相似文献   
98.
设G是有向图,T(G)表示G的有向全图.本文得到了它们的幂敛指数k(G)和k(T)之间的关系:对任何有向图G,周期p(T(G))=1;当G是本原图时,k(T)≤k(G)+1,文中给出了取得k(G)+1的两类图;当G是无圈图时,k(T)=2k(G)-1,当G是有向圈时,k(T)=2|V(G)|-1,当G是强连通时得到了k(T)的一些估计.  相似文献   
99.
For a finite group G, let T(G) denote a set of primes such that a prime p belongs to T(G) if and only if p is a divisor of the index of some maximal subgroup of G. It is proved that if G satisfies any one of the following conditions: (1) G has a p-complement for each p∈T(G); (2)│T(G)│= 2: (3) the normalizer of a Sylow p-subgroup of G has prime power index for each odd prime p∈T(G); then G either is solvable or G/Sol(G)≌PSL(2, 7) where Sol(G) is the largest solvable normal subgroup of G.  相似文献   
100.
The relationships of the structure and electrical properties of anisotropic HCl‐doped polyaniline (PANI) films cast from N,N′‐dimethylpropylene urea (DMPU) solutions and stretched to different draw ratios were studied. The anisotropic structure of the stretched PANI films was examined by X‐ray diffraction, near‐infrared wave‐guide coupling, and polarized infrared measurements. The PANI emeraldine base (EB) films cast from DMPU solutions had a single‐phase noncrystalline structure, and stretching of the films did not cause crystallization to occur. The transition moment angles of two weakly absorbing infrared bands were determined, and the Hermans' orientation functions for the PANI EB films were calculated. The PANI films were then doped with HCl, and the electrical properties were determined by impedance spectroscopy. With a specially designed test fixture, the in‐plane and through‐plane impedance was obtained. The conductivity along the stretch direction increased with orientation. The in‐plane conductivity was significantly higher than the through‐plane conductivity. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 823–841, 2003  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号