非线性算子方程变号解的存在性及其应用

本文利用锥理论讨论了非线性算子方程变号解的存在性,并将抽象结果应用于Sturm-Liouville两点边值问题。所得结果无论在理论上还是在应用上都是新的.     

非线性差分方程组多正解的存在性

本文应用不动点指数理论证明了一个非线性差分方程组多正解的存在性.     

偏振对飞秒激光辐照LiF晶体的影响

飞秒激光聚焦到LiF晶体内部, 晶体的加工形貌随偏振改变. 实验表明, 偏振方向平行于<110> 晶向时, 加工起点到表面的距离是<100>偏振下的1.08 倍; 而<110>偏振下加工终点到表面的距离是<100> 偏振下的1.01 倍. 为了解释加工形貌的偏振依赖, 建立了逆韧致辐射、雪崩电离和无辐射跃迁的模型, 首先, 价带电子通过强场电离和雪崩电离, 从激光中吸收能量跃迁到导带, 该过程用电子密度演化方程和傍轴非线性薛定谔方程描述, 求解方程得到导带电子密度; 其次, 导带电子通过无辐射跃迁过程释放能量给晶格, 由能量守恒计算出晶格温度沿激光传播方向的分布; 最后, 晶格温度超过熔点以上的区域被加工. 模拟结果显示, <110>偏振下加工起点到表面的距离是<100> 偏振下的1.03倍, 而<110>偏振下加工终点到表面的距离是<100>偏振下的0.981 倍, 与实验结果基本一致. 虽然Z扫描技术测量的非线性折射率随偏振方向变化, 但是非线性折射率的变化趋势与实验结果相反. 模拟和实验证明逆韧致辐射导致加工形貌随偏振变化.     

光频段双层手征结构光学特性及负折射率研究

设计了一种工作在光波段的新型四重对称的双层手征结构,通过数值模拟得到透射系数和反射系数,反演计算了结构的圆二色性、旋光角、手征参数和折射率。结果表明该结构在谐振波长附近具有很强的旋光性,并且在椭偏度为零时,即透射光变成完全线偏振光时,旋光角达到了55°;在一定波段内可以实现左旋圆偏振光(LCP)和右旋圆偏振光(RCP)的负折射率,且不需要介电常数和磁导率同时为负,更重要的是,实现负折射率的左旋圆偏振光(LCP)具有较宽的频带,不局限于谐振波长附近,在椭偏度为零时,折射率也为负。考虑到具体的实验制作,对加衬底的手征结构进行了数值模拟,结果表明谐振波长向长波长方向产生了偏移,完全线性偏振光的旋光角仍然有40°。     

Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV

In_0.49Ga_0.51P films, both undoped and doped n- and p-type (up to 10¹⁸ cm^-3), were grown lattice matched on GaAs substrates, with different miscut angles, by Metal-Organic Vapour Phase Epitaxy (MOVPE) at different temperatures. The shift of the fundamental gap E₀, caused by “ordering effect” was measured as a function of temperature by photoluminescence. The complex refractive index = n + ik and the dielectric function = ɛ ₁ + iɛ ₂ at room temperature were determined from 0.01 to 5.5 eV by using complementary data from fast-Fourier-transform far-infrared (FFT-FIR), dispersive, and ellipsometric spectroscopies. The effect of the native oxide was accounted for and the self-consistency of the optical functions was checked in the framework of the Kramers-Kronig causality relations. In the restrahlen region the dielectric function was well fitted by classical Lorentz oscillators; in the transparent region below E₀, the refractive index was modelled by a Sellmeier dispersion relation; in the interband region the dielectric function was well reproduced by analytical lineshapes associated to seven critical points. Thus parametrized analytical expressions were obtained for the optical functions all over the spectral range, without discontinuities, to be used in the modelling and characterization of multi-layer structures, also on opaque substrates. Received 13 December 2001 Published online 25 June 2002     

统计优化迭代法测量质子交换波导折射率分布

提出了一种用于拟合测量渐变波导的折射率分布的新的理论处理。该方法把统计优化手段导入循环迭代法 ,可适用于费米函数这一类曲线变化范围大、且有多个自变量的函数。实验上用焦磷酸质子交换制备了LiNbO3波导样品 ,用该方法对退火后的折射率分布作了测量拟合 ,折射率拟合值与实验值的均方差为± 8.2× 10 - 4。     

介质光波导的数值计算及近似方法

综述介质光波导中模式分析方法的最新进展。着重分析严格的数值分析方法及近似方法最近的研究进展。依据方法的计算精确度、计算效率和计算复杂度等因素．对有限元法和有限差分法这两种数值分析方法以及有效指数法和频谱指数法等近似方法进行讨论。论述磁光波导的分析方法。     

斐索梯度折射率光纤透镜传感实验

采用LD泵浦的单纵模Nd：YVO4倍频激光器、梯度折射率光纤透镜等器件构成斐索梯度折射率光纤透镜传感实验仪．本文介绍了实验装置和实验原理，并给出了实验结果。     

相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性

采用射频磁控溅射法制备了ZnS-SiO₂ 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO₂薄膜微结构和折射率n的影响.研究表明,ZnS-SiO₂薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO₂基体中,当溅射功率和溅射气压变化时,ZnS-SiO₂薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO₂介电薄膜.     

Electron beam evaporated LaF3 thin films prepared by different temperatures and deposition rates

LaF₃ thin films were prepared by electron beam evaporation with different temperatures and deposition rates. Microstructure properties including crystalline structure and surface roughness were investigated by X-ray diffraction (XRD) and optical profilograph. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical composition of the films. Optical properties (transmittance and refractive index) and laser induce damage threshold (LIDT) at 355 nm of the films were also characterized. The effects of deposition rate and substrate temperature on microstructure, optical properties and LIDT of LaF₃ thin films were discussed, respectively.