Corrections of proofs for Hansen and Mélot's two theorems

The Randi? index R(G) of a (chemical) graph G is also called connectivity index. Hansen and Mélot [Variable neighborhood search for extremal graphs 6: analyzing bounds for the connectivity index, J. Chem. Inf. Comput. Sci. 43 (2003) 1-14] in their paper, characterized the chemical trees of given order and number of pendent vertices which have the minimum and maximum Randi? index, respectively. In this note, we point out the mistakes in the proofs of their results Theorems 8 and 10, while we still believe that the two theorems are true, and then we give their corrected proofs.     

薄相屏闪烁的数值分析

本文在弱闪烁条件下，利用广泛适用于星际闪烁、行星际闪烁和电离层闪烁的薄相屏理论，以行星际闪烁为算例，对薄相屏闪烁进行了数值分析。结果表明：垂直于介质运动方向上的不规则结构的大小对闪烁有着重要的影响，直接表现在频谱的变化趋势和振荡幅度的不同。尤其是当小于Ｆｒｅｓｎｅｌ尺度时，数值计算表明此时没有闪烁发生。     

自聚焦棒耦合性能的分析

本文采用光线光学的原理分析了自聚焦棒（ＧＲＩＮ）的光学性能，在折射率分布为抛物线近似的条件下，推导出较为简单的ＧＲＩＮ中的光线轨迹方程，并实验测量了ＧＲＩＮ的耦合效率，从而由理论和实验两方面讨论ＧＲＩＮ的聚焦特性。     

梯度折射率棒中传播的高斯光束轨迹解析解及其存在条件的讨论

本文提出光束轨迹方程的一般解，导出解析解的存在条件，推广了文献［１］的光线传播理论，文中以一特定梯度折射率棒为例，讨论了高斯光束在棒中的传播特性。     

激光探针监测半导体器件内自由载流子浓度调制效应

介绍了基于自由载流子对介质折射率调制作用,而建立的监测半导体器件内自由载流子变化情况的实验装置,该装置能实时反映自由载流子变化情况,且对原电路无任何影响。本方法适用于硅和砷化镓材料的电子和光电子器件,也显示了在测量集成电路内部有源器件特性方面的潜在应用前景。     

迭加与量化水印嵌入方案的比较及量化参数优化

分别研究了迭加法和量化法的隐蔽性和稳健性，并且提出了量化调制水印方案中的参数优化方法。对两类方法的分析比较表明，迭加法适用于在高频分量嵌入水印，而量化法适用于在低频分量嵌入水印。并以实验验证了这一结论。     

区域技术创新系统评估体系的研究

技术创新对提升企业竞争力、提高综合国力、促进经济增长和国家持续发展非常重要。本在研究了区域经济发展和国家创新系统的相关献基础上，建立了系统、量化的区域技术创新系统评估指标体系，提出了决定区域创新系统技术创新能力的主要因素，并用TOPSIS方法对指标的量化进行了尝试。     

Optical and conductive properties of AlSi-alloy/SiCp composites: application in modelling CO2 laser processing of composites

The optical properties—reflectivity, real part of the refractive index, absorption coefficient as well as the thermal and electrical conductivity of AlSi-alloy/SiC_p composite were measured. The optical parameters and both conductivities decreased with the increase of SiC_p particles volume in AlSi-alloy matrix. This decrease was almost linear for the volume fraction of SiC_p particle up to 10 vol% of the total mass of the composite. For the 15 vol% of SiC_p particles, the departure from linearity is connected with the presence of additional phases in AlSi-alloy/SiC_p composite materials. The measured temperature dependencies of optical reflectivity and electrical conductivity for AlSi-alloy/SiC_p 15 vol% are of metallic character. Modelling of the interaction of the CO₂ laser radiation with AlSi-alloy/SiC_p 15 vol% composite should allow to estimate the initiation time at which the surface composite reaches melting temperature.     

Sn/Ge(1 1 1) α-phase: characterization of image resonances by specular electron reflection and selective electron scattering

Image potential resonances on the Sn/Ge(1 1 1) α-phase are investigated by two closely related methods: specular electron reflection and so-called selective electron scattering. Electrons from image resonances are detected on this surface at 120 and 300 K, i.e. below and above the phase transition at about 200 K. The dispersion of the image resonances reveals at these two temperatures equivalent effective electron masses, which are characteristic for this type of electronic surface states. The results of the two methods are consistent according to the similarity of the scattering processes. Changes in the loss peak intensity with the annealing temperature are assigned to the surface quality and are reflected by characteristic photoemission intensities.     

Structure–electrical property study of anisotropic polyaniline films

The relationships of the structure and electrical properties of anisotropic HCl‐doped polyaniline (PANI) films cast from N,N′‐dimethylpropylene urea (DMPU) solutions and stretched to different draw ratios were studied. The anisotropic structure of the stretched PANI films was examined by X‐ray diffraction, near‐infrared wave‐guide coupling, and polarized infrared measurements. The PANI emeraldine base (EB) films cast from DMPU solutions had a single‐phase noncrystalline structure, and stretching of the films did not cause crystallization to occur. The transition moment angles of two weakly absorbing infrared bands were determined, and the Hermans' orientation functions for the PANI EB films were calculated. The PANI films were then doped with HCl, and the electrical properties were determined by impedance spectroscopy. With a specially designed test fixture, the in‐plane and through‐plane impedance was obtained. The conductivity along the stretch direction increased with orientation. The in‐plane conductivity was significantly higher than the through‐plane conductivity. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 823–841, 2003