Very low resistance ohmic contacts to n-GaN

Ohmic contacts with low resistance are fabricated on n-GaN films using Al/Ti bilayer metallization. GaN films used are 0.3 μm thick layers with carrier concentrations of 1 × 10¹⁹ cm⁻³ grown on the c-plane sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy. The lowest value for the specific contact resistivity (ρ_c) of 1.2×10⁻⁸ Ω·cm² was obtained with furnace annealing at 500°C for 60 min. This result shows the effectiveness of high carrier concentration GaN layers and the low temperature annealing for the realization of low resistance ohmic contacts. Sputtering Auger electron spectroscopy analysis reveals that Al diffuses into Ti layer and comes into contact with the GaN surface.     

PtSi探测器的长波红外工作

通过使用分子束外延生长技术在ＰｔＳｉ／Ｓｉ界面上加进一足够薄的高掺杂浓度峰，可使ＰｔＳｉ肖特基红外探测器的截止波长延伸至长波红外范围。     

紫外敏感硅光伏二极管的正向特性

通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置Ｃ－Ｖ特怀和Ｉ－Ｖ特性与般ＰＮ结二极管的正向特性有明显地不同。文章在理论分析的基础上提出了该器件的一种新的模型－－两个背靠背的二极和客一个电阻的串联，能很好地解释该器件的正反向特性。     

军用PtSi-SBIRFPA的新发展

概述了军用热成象系统中硅化铂肖特基势垒红外焦平面阵列（ＰｔＳｉ－ＳＢＩＲＦＰＡ）技术的新发展。     

Al/TiSi_2/Si系统与肖特基势垒二极管的热稳定性

本文用x射线衍射及I—V测量法研究了Al/TiSi_2/Si系统热稳定性及肖特基势垒特性。热稳定性的研究结果表明;系统在550℃以下退火是热稳定的;在更高的温度下退火,Al开始与TiSi_2起反应,形成了(Ti_7Al_5)Si-(12)三元化合物。在进行电特性研究时,发现系统在450℃退火时,Al已渗透TiSi_2而使肖特基势垒二极管失效。     

接触力学的发展概况

接触问题的解法,最先在弹性理论中得到发展且比较完善;以后,考虑到粘弹性、塑性、各向异性、动力学和运动学特性,而大大地发展了各种接触问题,远远超过了弹性理论的范围.本文对接触问题进行了分类,介绍了经典、非经典的弹性接触理论的发展概况.最后,比较详细地分析了国内外当前的研究结果和发展动向.      

Temperature dependence and the effect of hydrogen peroxide on ITO/poly-ZnO Schottky diodes fabricated by laser evaporation

Transparent and efficient poly-ZnO ultraviolet Schottky diodes grown at different temperatures with indium-tin-oxide (ITO) as the metallic contact layer were fabricated with hydrogen peroxide (H₂O₂) applied as a surface treatment at 70 °C for 20 min. Analysis via field-emission scanning electron microscopy (FESEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that the ZnO films underwent gradual oxidation and that H₂O₂ treatment resulted in an interfacial ZnO₂ layer that covered the ZnO surface. I–V measurements indicated that the ideality factor and the Schottky barrier height improved with increasing shunt resistance, and the trade-off between film quality and the degree of oxidation revealed that films grown at 400 °C exhibited the best diode characteristics.     

Difference in the electric behavior of micro- and nano Schottky diodes

The real Schottky diode (SD) consists of set in parallel connected both electrically cooperating micro- and nano contact ever micro- and nano contacts separately differ from each other only in potential barrier height. They are in an environment of the next micro sites of the general contact surfaces of SD and because of their interaction there is an additional electric field. Under action of an additional electric field character of interrelation of barrier height and the ideality factor of micro-and nano contacts gets specific features. Between the experimental results and energy diagram of the real metal–semiconductor contact has been good agreement.     

X波段四次谐波混频器及相位改进设计

一种基于肖特基反向并联二极管对的X波段4次谐波混频电路仿真设计.在设计过程中发现,本振或射频功率的微小变化可能引起中频功率较大波动.针对这一发现,对整个系统进行了改进研究.测试结果证实了改进设计的可行性及良好的性能.