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31.
This paper presents a systematic analysis of the electrode configuration influence on the electrical properties of organic semiconductor (OSC) thin-film devices. We have fabricated and electrically characterized a set of planar two-terminal devices. The differences in I-V characteristics between the top and bottom contact structures are presented and analyzed. Top-contact configurations have a linear current vs. electric field behavior, while the bottom-electrode devices display a transition from ohmic to space-charge-limited conduction regime. The transition is temperature- and thickness-dependent. Finite-element calculations show that when the OSC film is connected using top electrodes, the current flows through the OSC bulk region. On the other hand, the bottom-electrode configuration allows most of the current to flow near the OSC/substrate interface. The current probes interfacial states resulting in a space-charge conduction regime. The results shed some light on the so-called “contact effects” commonly observed in organic thin-film transistors. The findings presented here have implications for both the understanding of the charge transport in OSC films and the design of organic semiconductor devices. 相似文献
32.
针对锗硅在形成金属锗硅化物时存在部分应力释放、界面形貌特性变差的问题,提出了在Si0.72Ge0.28上分别外延薄硅(Si)覆盖层和锗硅(Si072Ge0.28)缓冲层的工艺方案.实验结果表明,通过两步快速热退火,两个方案的工艺条件都能形成低阻的NiuPt1-uSitGe1-v和改善NivPt1-uSitGe./Si0.72Ge0.28的界面形貌.但相比较而言,在Si0.72Ge0.28上外延10 nm Si覆盖层的方案能够形成更好的NiuPt1-uSivGe1-t/Si0.72Ge0.28界面形貌.与没有改进的方案相比,该方案形成的肖特基接触更具有更低的肖特基接触势垒高度,更易形成欧姆接触. 相似文献
33.
34.
Luis Alvarez‐Thon Carlos Bustos Katherina Espinoza‐Santibaez Maria Teresa Garland Ricardo Baggio 《Acta Crystallographica. Section C, Structural Chemistry》2013,69(10):1200-1204
The title compound, C17H11F5N4O, is described and compared with two closely related analogues in the literature. There are two independent molecules in the asymmetric unit, linked by N—H...O hydrogen bonds and π–π interactions into dimeric entities, presenting a noticeable noncrystallographic C2 symmetry. These dimers are in turn linked by a medium‐strength type‐I C—F...F—C interaction into elongated tetramers. Much weaker C—H...F contacts link the tetramers into broad two‐dimensional substructures parallel to (101). 相似文献
35.
M. Chandra Sekhar N. Nanda Kumar Reddy B. Venkata Rao G. Mohan Rao S. Uthanna 《Surface and interface analysis : SIA》2014,46(7):465-471
Titanium dioxide (TiO2) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO2 films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO2/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO2. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO2/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO2/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
36.
Z. P. Niu Z. M. Zheng D. Y. Xing 《The European Physical Journal B - Condensed Matter and Complex Systems》2007,60(3):281-287
Four-component Bogoliubov-de Gennes equations are applied to study
tunneling conductance spectra of ferromagnet/ferromagnet/d-wave
superconductor (F1/F2/d-wave S) tunnel junctions and to find
out signs of spin-triplet pairing correlations induced in the
proximity structure. The pairing correlations with equal spins
arises from the novel Andreev reflection (AR), which requires at
least three factors: the usual AR at the F2/S interface, spin
flip in the F2 layer, and superconducting coherence kept up in
the F2 layer. Effects of angle α between magnetizations of
the two F layers, polarizations of the F1 and F2 layers, the
thickness of the F2 layer, and the orientation of the d-wave S crystal on the tunneling conductance are investigated. A conversion
from a zero-bias conductance dip at α = 0 to a zero-bias
conductance peak at a certain value of α can be seen as a
sign of generated spin-triplet correlations. 相似文献
37.
Back contact–absorber interface modification by inserting carbon intermediate layer and conversion efficiency improvement in Cu2ZnSn(S,Se)4 solar cell 下载免费PDF全文
Fangqin Zeng Kaiwen Sun Li Gong Liangxing Jiang Fangyang Liu Yanqing Lai Jie Li 《固体物理学:研究快报》2015,9(12):687-691
Carbon layers have been employed as intermediate layers between Mo back contact and Cu2ZnSn(S1–xSex)4(CZTSSe) absorber film prepared by sol–gel and post‐selenization method. Carbon layers with appropriate thickness can significantly inhibit the formation of MoSe2 and voids at bottom region of the absorber, and therefore reduce the series resistance remarkably. The conversion efficiency can be boosted by the introducing of the carbon layer from 6.20% to 7.24% by enhancement in short current density, fill factor and open voltage in comparison to the reference sample without carbon layer. However, excess thickness of carbon layer will worse device performance due to the deteriorated absorber crystallinity. In addition, the time‐resolved photoluminescence analysis shows that inserting the carbon layer with suitable thickness does not introduce recombination and lower minority lifetime. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
38.
39.
《Current Applied Physics》2015,15(11):1500-1505
The in-situ capacitance and dielectric properties of 25 MeV C4+ ion irradiated Ni/n-GaAs Schottky barrier diode (SBD) were studied at 100 kHz in the fluence range 5 × 1010 – 5 × 1013 ions/cm2. The investigation shows reduction in capacitance and charge density with increase in ion fluence. Consequent changes were observed in other related parameters like conductance, dielectric constant, dielectric loss, loss tangent and electrical modulus. The results were interpreted in terms of generation of swift heavy ion induced acceptor trap states by electronic energy loss mechanism. Besides, the switch over characteristics of depletion to inversion regions in the CV plot reveals minority carrier recombination centers also. The dispersion and relaxation peaks observed in bias dependent dielectric plots were ascribed to the polarization and relaxation mechanism due to the interfacial trap states. The traps and recombination centers were found to alter the barrier characteristics of the fabricated SBD depending upon the ion fluence. 相似文献
40.
Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO2/SiO2/Si substrates from Ba2LnFeNb4O15 ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk, i.e., ε ∼150 and σ ∼10−6 Ω−1 cm−1 at 1 MHz and room temperature. The films exhibit two dielectric anomalies which are attributed to Maxwell Wagner polarization mechanism and relaxor behaviour. Both anomalies are sensitive to post-annealing under oxygen atmosphere and their activation energies are similar Ea ∼0.30 eV. They are explained in terms of electrically heterogeneous contributions in the films. 相似文献