A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

Tunnelling current in Schottky diodes containing InAs quantum dots

Current transport mechanism in Schottky diode containing InAs quantum dots (QDs) is investigated using temperature-varying current-voltage characteristics. We found that the tunnelling emission has obvious effects on the I-V characteristics. The I-V-T measurements revealed clear effects of QDs on the overall current flow. Field emission (FE, pure tunnelling effect) was observed at low temperature and low voltages bias region. The zero-bias barrier height decreases and the ideality factor increases with decreasing temperature, and the ideality factor was found to follow the T₀-effect. When the reverse bias is varied, the ideality factors of Schottky barriers exhibit oscillations due to the tunnelling of electrons through discrete levels in quantum dots. The traps distributed within InAlAs layer can also act as a transition step for reverse bias defect-assisted tunnelling current which can phenomenologically explain the decrease of the effective barrier height with measurement temperature.     

Direct current and impedance spectroscopic studies on MoO3 modified ZnPc/ITO Schottky diodes

We use experimental results of direct current and low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor ZnPc. The experimental results demonstrate an increase in current and holes mobility by the introduction of a thin MoO₃ film at the ITO/ZnPc interface. This significantly improves the device performance. The improvement is explained in terms of the reduction in the effective barrier for charge transfer from ZnPc to ITO.     

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaO_x layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.     

Crystalline misfit-angle implications for solid sliding

For the contact of two finite portions of interacting rigid crystalline surfaces, we compute the pinning energy barrier dependency on the misfit angle and contact area. This simple model allows us to investigate a broad contact-size and angular range, thus obtaining the statistical properties of the energy barriers opposing sliding for a single asperity. These data are used to generate the distribution of static frictional thresholds for the contact of polycrystals, as in dry or even lubricated friction. This distribution is used as the input of a master equation to predict the sliding properties of macroscopic contacts.     

A bias-tunable electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes

We investigate the effect of the bias in an electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes. The numerical results show that the electron transmission and the conductance as well as the spin polarization are strongly dependent on the bias applied to the device.     

Current–voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

In this study, the current-voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm²) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.     

Resonant frequency of an air gap tuned circular disc microstrip antenna

In this study, the formulation and the computation of the resonant frequency of an air gap tuned circular disc microstrip antenna are simplified, with improved accuracy, by using a new and very simple effective permittivity expression which is valid for thin and thick gaps. Very good agreement between the theoretical and the experimental resonant frequency values is obtained for the various structural parameters and operational modes.     

基于MATLAB的SiC肖特基二极管气体传感器模拟

提出了SiC-SBD气体传感器器件分析模型,利用当前流行的MATLAB强大的计算编程功能,模拟了SiC-SBD气体传感器的电流-电压特性,结果与实验数据吻合很好,较好地解释了Pd-SiC肖特基二极管比较灵敏的原因,并根据模拟结果提出了提高传感器灵敏度的方法。     

MSM结构硅光探测器

采用 MSM 双肖特基势垒结构制作的硅光电二极管,在0.2～1.10μm波长范围内具有高的响应度。这种结构还可以构成横向光晶体管,共发射极电流增益为2～4倍。实验表明,MSM 结构是改善硅光电探测器光谱响应的良好结构。