Structure and defects at Y2BaCuO5 interfaces in melt-textured YBa2Cu3Ox superconductors

Y₂BaCuO₅ (211) inclusions are prominent microstructural features found in melt-textured YBa₂Cu₃O_x (123) superconductors. These particles are of interest because the 123/211 interfaces and the interface-associated defects have been proposed to be flux pinning centers. In addition, the 211 particles are believed to be heterogeneous nucleation centers of dislocation which can increase the critical current density of 123. Unfortunately, only limited studies have been performed on these particles to ascertain their roles in flux pinning. In this investigation, 211 particles, the interfacial structure and defects in undeformed and mechanically deformed melt-textured 123 have been studied by transmission electron microscopy. It was found that there appears to be a preferred orientation between large oblong 211 particles and the 123 matrix. In addition, while the 123/211 interfaces in undeformed 123 are sharp and relatively undistorted, the interfaces in deformed 123 samples are much thicker. Also, the distribution of strained regions and dislocations around oblong 211 particles in undeformed 123 is nonuniform; the interfaces of low surface curvature are relatively free of defects while the surfaces of high curvature are abundant in dislocations. In contrast, the 123/211 interfaces in deformed 123 samples contain high density of dislocations regardless of interface curvature.     

外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征

利用脉冲激光沉积（ pulsed laser depositon, PLD）方法在YSZ（ Y2 O3 stabilised zirconia）单晶衬底上外延生长了Gd掺杂的CeO2薄膜（gadolinium doped CeO2,GDC）。利用透射电子显微镜（TEM）对GDC／YSZ界面以及GDC薄膜内部的位错结构进行了表征。实验发现,界面处存在周期性分布的失配位错,界面失配主要通过失配位错释放。 GDC薄膜内部存在两种不同的位错,其中一种为纯刃型位错,另外一种为混合型位错。     

Grain size effects on microstructural stability and creep behaviour of nanotwinned Ni free-standing foils at room temperature

Creep tests were performed on the high stacking fault energy (SFE) nanotwinned (NT) Ni free-standing foils with nearly the same twin thickness at room temperature (RT) to investigate the effects of grain size and loading rate on their microstructural stability and creep behaviour. The grain growth mediated by the twinning/detwinning mechanism at low applied stresses (<800 MPa) and grain refinement via the detwinning mechanism at high applied stresses (>800 MPa) were uncovered in the present NT-Ni foils during RT creep, both of which are attributed to the interactions between dislocations and boundaries. It appears that a higher initial dislocation density leads to a faster primary creep strain rate and a slower steady-state creep strain rate. Unlike the non-twinned metals in which grain growth often enhances the creep strain rate, the twinning/detwinning-mediated grain growth process unexpectedly lowers the steady-state creep strain rate, whereas the detwinning-mediated grain refinement process accelerates the creep strain rate in the studied NT-Ni foils. A modified phase-mixture model combined with Arrhenius laws is put forward to predict the scaling behaviour between the creep strain rate and the applied stress, which also predicts the transition from grain growth-reduced to grain refinement-enhanced steady-state creep strain rate at a critical applied stress. Our findings not only provide deeper insights into the grain size effect on the mechanical behaviour of nanostructured metals with high SFE, but also benefit the microstructure sensitive design of NT metallic materials.     

Low-Energy Dislocation Structure (LEDS) character of dislocation boundaries aligned with slip planes in rolled aluminium

For the specific slip geometry of two sets of coplanar systems (a total of four systems) in fcc metals, the range of dislocation networks in boundaries aligned with one of the two active slip planes is predicted from the Frank equation for boundaries free of long-range elastic stresses. Detailed comparison with experimental data for eight dislocation boundaries in cold-rolled aluminium grains of the 45° ND rotated Cube orientation is conducted. It is concluded that the boundaries are Low-Energy Dislocation Structures, which are in good agreement with the Frank equation while also lowering the energy by dislocation reactions. Cross slip plays a role in the boundary formation process.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101～8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.     

A scenario for the electronic state in the manganese perovskites: the orbital correlated metal

We propose a novel scenario for the electronic state in the manganese perovskites. We argue that, at low temperatures and within the ferromagnetic state, the physics of these colossal magnetoresistance compounds may be characterized by a correlated metallic state near a metal insulator transition where the orbital degrees of freedom play the main role. This follows from the observation that a two-band degenerate Hubbard model under a strong magnetic field can be mapped onto a para-orbital single band model. We solve the model numerically using the quantum Monte-Carlo technique within a dynamical mean field theory which is exact in the limit of large lattice connectivity. We argue that the proposed scenario may allow for the qualitative interpretation of a variety of experiments which were also observed in other (early) transition metal oxides. Received: 3 October 1997 / Revised: 9 December 1997 / Accepted: 12 January 1998