固定Ionic liquid/Silica sol/Nafion膜中的联吡啶钌电化学发光行为的研究及应用

制备了Ionic liquid/Silica sol/Nafion-联吡啶钌复合物膜修饰金电极。采用循环伏安(CV)和电致化学发光(ECL)法,考察了联吡啶钌和左氧氟沙星在此修饰电极上的电化学及其发光行为。结果表明,此修饰电极表现出很好的电化学活性和电化学发光响应。基于左氧氟沙星对固定化联吡啶钌在0.1 mol/L磷酸盐缓冲液中的弱电化学发光信号有较强的增敏作用,建立了电化学发光检测盐酸左氧氟沙星的新方法。在最佳实验条件下,左氧氟沙星浓度在1.0×10-7～1.0×10-4mol/L范围内与相对发光强度呈线性关系(r2=0.998 4),检出限(S/N=3)为1.59×10-9mol/L。连续平行测定2.2×10-5mol/L的左氧氟沙星溶液10次,发光强度的相对标准偏差(RSD)为3.6%。对样品进行回收率试验,回收率在95.6%～103.5%之间,RSD(n=5)为3.0%。该方法具有较高的选择性和灵敏度,样品处理简单快速,用于盐酸左氧氟沙星的测定,结果满意。     

一种基于STM32的NAND flash的块分配框架设计

STM32对大容量数据文件存储与管理问题可通过NAND flash来解决。而NAND flash的高效管理需要文件系统参与。NAND flash有特殊的块读写及擦除机制,一般的嵌入式文件系统组织结构并不完全兼容NAND flash。针对NAND flash的特点兼顾STM32的资源承受力要提出新的NAND flash块分配框架,框架通过块分配槽这种数据结构,在不使用块分配表与垃圾表的情况下,实现了NAND flash均衡负载与垃圾块的回收;同时通过节点分配栈与文件节点表的配合来提高STM32对文件的读写速度,空间利用率和系统性能。仿真实验和计算结果表明该块分配框架可有效提高NAND flash块的均衡负载与节省RAM空间。     

Abnormal adsorption behavior of dimethyl disulfide on gold surfaces

Adsorption of dimethyl disulfide (DMDS) on gold colloidal nanoparticle surfaces has been examined to check its binding mechanism. Differently from previous results, DMDS molecules adsorbed on the gold surface at high concentration showed the S–S stretching band at 500 cm⁻¹ in surface-enhanced Raman scattering (SERS) spectra, which indicates the presence of intact adsorption of DMDS molecules. However, it was found that the S–S bond of disulfides was easily cleaved on the gold surface at low concentration. These behaviors were not observed for diethyl disulfide (DEDS) or diphenyl disulfide (DPDS). Our results indicate that DMDS molecules with the shortest alkyl chains on the gold surface can be inserted into self-assembled monolayers (SAMs) without the S–S bond cleavage during self-assembly due to insufficient lateral van der Waals interaction and the low adsorption activity of disulfides, whereas DEDS with longer alkyl chains or DPDS with the weak disulfide bond dissociation energy would not. These unusual DMDS adsorption behaviors were examined by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). We also compared the bonding dissociation energy of the S–S bonds of various disulfides by means of a density functional theory (DFT) calculation.     

Complex turing patterns in non-linearly coupled systems

Recently pattern formation in layered structures, showing complicated superimposed patterns, has been modeled by coupling two Turing systems linearly, i.e., passively, such that the characteristic length scales of the independent systems are well separated. Here we propose a model of two non-linearly coupled Turing systems to study pattern formation in layered membrane-like structures, where the coupling plays an active role and changes the kinetics of the uncoupled systems. Extensive numerical simulations show that non-linear coupling generates a number of new regular patterns different from the ones observed earlier with linearly coupled systems. Some of them turn out to be superimposed patterns with different length scales, but many are not. Also, contrary to the linear coupling case, the strength of the non-linear coupling is found to play an important role in the formation and selection of patterns.     

Selective adsorption behaviors of guest molecules COR in the hexamer host networks at liquid/solid interface

Here,the selective adsorption behaviors of guest molecule COR in two hexamer host grids were investigated by means of scanning tunnelling microscope(STM).The assembled structures of small functional organic molecules TTBTA and TATBA were thermodynamically stable.Interestingly,the introduction of the guest molecule COR destroyed the original hexamer structure of TTBTA and combined with it to form a new triangular host-guest system.Different from TTBTA,the introduction of the guest molecule COR did not affect the six-membered ring structure of TATBA.Furthermore,the co-assembly structure of TTBTA/TATBA/COR was established and the guest molecule COR showed preferential adsorption to the TATBA host grid.Density functional theory(DFT) calculations had been performed to disclose the mechanism of the involved assemblies.     

Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate

Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0 0 0 1) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current–voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface.     

差分输入双积分电路在热电阻测温中的应用

针对常规分立双积分AD只能处理单端信号的问题,给出了一种输入和基准电压均支持差分信号的分立差分双积分AD。在热电阻测量中,把热电阻和基准电阻串联同一回路,以基准电阻压降作为基准,对热电阻的压降进行测量,并从软硬件两个方面对常见的误差因素进行对消处理。实验表明,该电路用于PT100测温时,跳字不超过0.1℃,精度可以达到±0.1℃,且对运放型号无特殊要求,是一种低成本、高精度的温度测量方案。     

基于ARM和Zigbee的智能浮纹织造控制系统

针对纺织业中浮纹布的织造一直依赖纯机械控制的现状,为提高浮纹布织造的精度和效率,特设计了智能浮纹织造控制系统,通过上位机的工艺软件进行浮纹花色品种的设计,以U盘将多种浮纹工艺文件导入到浮纹织造控制系统里,以STM32处理器为核心根据浮纹工艺进行相关织造的电气控制。为了便于实时掌握浮纹布的产量并按订单及时进行品种的更换,系统以Zigbee技术实现数据的传输及命令的远程控制,避免了复杂的布线。经现场长时间运行,系统稳定可靠,织造速度可达250转/分以上,控制精度达到0.1mm,具有很好的应用价值。     

Complex Surface Chemistry of an Otherwise Inert Solvent Molecule: Tetrahydrofuran on Si(001)

The reaction of tetrahydrofuran (THF), an otherwise inert solvent molecule, on Si(001) was experimentally studied in ultra‐high vacuum. Using scanning tunneling microscopy (STM) and photoelectron spectroscopy at variable temperature, we could both isolate a datively bound intermediate state of THF on Si(001), as well as the final configuration that bridges two dimer rows of the Si(001) surface after ether cleavage. The latter configuration implies splitting of the O?C bond, which is typically kinetically suppressed. THF thus exhibits a hitherto unknown reactivity on Si(001).