Statistical Analysis of the Effect of Mineral Admixtures on the Strength of the Interfacial Transition Zone

Microscopic evidence indicates that the thickness of the interfacial transition zone (ITZ) between the aggregate and the cement paste is modified when mineral admixtures partially replace portland cement. Unfortunately, there is limited information on the significance of these microscopic modifications to the mechanical properties of the ITZ. This research reports experimental results on the shear and tensile strength of the ITZ as affected by the addition of the following mineral admixtures: silica fume, fly ash, and natural pozzolan. Statistical analysis was used to identify the significant parameters affecting the tensile and shear strength of the ITZ. Experimental results indicate that not only does the incorporation of silica fume and fly ash increase the strength of the ITZ, these mineral admixtures have a greater influence on the strength increase of the ITZ than in the strength increase of the cement paste.     

Macrodefect-Free Materials: Modification of Interfaces in Cement Composites by Polymer Grafting

MDF materials are chemically bonded ceramic materials free of the macrodefects typical of hydraulic cement-based materials. MDF materials arising through reactions of sulfo-aluminate-ferrite belitic (SAFB) clinkers and/or Portland cements (PC) with two types of water-soluble polymer (hydroxy-propylmethyl cellulose {HPMC}, polyphosphate glass {poly-P}) are discussed. Mixes of low energy SAFB clinkers with Portland cement, HPMC and, especially poly-P comprise promising cross-linked compositions additional to the better known MDF materials formed from high alumina cement with polyvinylalcohol/acetate. The principles of co-ordination of P and C atoms (of the polymer) with Al and Fe atoms (originating from the cement) are highlighted from spectroscopic information on next-nearest-neighbour interactions, along with the effects of second co-ordination spheres. Polymers modify the interface through functional bonding/grafting of polymer chains onto the surfaces of cement grains. Both the cross-linked atomic structure and the interface coincide well with the model of functional polymers and represent a new type of atomic-level structure in polymer-modified cements. Interpretation is based on previous magnetic resonance and thermal analysis studies. The compactness of Al(Fe)-O-P cross-links reduces transport through the interfaces, increasing the interfacial interactions and resisting the unfavourable uptake of moisture and carbonation.     

基于分形维数的液体爆炸分散中界面破碎形态研究

通过对爆炸抛撒图象的处理,得到液体界面的曲线.采用盒维数的计算方式,计算界面曲线的分形维数.通过对各时刻液体界面分形维数的变化研究,分析爆炸抛撒近场阶段的变化过程,同时观察到蘑菇状尖顶的出现与破碎,以及空化区域的形成和消失现象。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

统计复用信道的数字用户环路复用设备

将信道传输容量动态分配技术应用于数字用户环路复用设备中，可用效地解决复用设备线路复用率和话音传输质量之间的矛盾，从而使复用设备具有最佳的传输效果。本文介绍了一种性能优良的统计复用信道的数字用户环路复用设备。     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

Electrochemical Immunoanalysis for Carcinoembryonic Antigen Based on Multilayer Architectures of Gold Nanoparticles and Polycation Biomimetic Interface on Glassy Carbon Electrode

This paper describes a layer‐by‐layer (LBL) self‐assembly process of chitosan (CTS) and gold nanoparticles (Au) on the pretreated negatively charged glassy carbon (GC) electrode to fabricate electrochemistry immunosensor with a nontoxic biomimetic interface, which provided an environment similar to a native system and allowed more freedom in orientation for immobilization of carcinoembryonic antibody (anti‐CEA) to monitor carcinoembryonic antigen (CEA). UV‐vis spectroscope, atomic force microscopy (AFM), and cyclic voltammetric (CV) measurements were used to follow the multilayer film formation. The performance of the biominetic interface and factors influencing the assay system were investigated in detail. The differential pulse voltammetry (DPV) current response is used for the CEA concentration assay. The dynamic range was from 0.50 to 80.00 ng mL^?1 with a detection limit of 0.27 ng mL^?1 at 3σ. In addition, the experiment results indicate that immobilization described in this proposed method exhibits a good sensitivity, selectivity, and stability.     

最有效的相容剂是两嵌段还是多嵌段聚合物？

采用Monte Carlo模拟方法研究了多嵌段聚合物在A／B／嵌段聚合物三组份体系作为相容剂使用的有效性．占总体积19％的A组份在体系中为分散相．模拟结果显示了两嵌段和多嵌段聚合物在界面上的聚集行为,以及如何影响这个不相容体系的相形为．两嵌段聚合物趋于直立在相界面上,而多嵌段聚合物更容易横跨在相界面上并占据较大的界面积．从而导致多嵌段聚合物更有效的阻止体系相分离的发生．     

Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs

Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides. While the field-effect mobilities were approximately 3–5 cm²/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm²/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample.     

离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.