SOI技术及其设备

介绍了SOI技术的特点和制造方法、超薄SOI技术,应变硅SOI技术及其设备,如大束流专用氧离子注入机。     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

A photonic wire-based directional coupler based on SOI

A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 μm × 0.34 μm, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 μm, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 ± 0.4 dB coupling loss between the taper fibers and the polished sides of the device.     

High-index contrast grating based broadband out-coupler on SOI

An efficient broadband out-coupler on silicon-on-insulator (SOI) with high-index contrast grating (HCG) is proposed. The presence of a silicon-air (high-index contrast) grating on the top silicon layer in SOI allows a strong interaction between the guided mode and the grating. The broadband design of the out-coupler is presented by optimising the various grating parameters. The design analysis and simulation of such an out-coupler is performed with finite difference method. Coupling efficiency of 54% is achieved over an ultra-wide wavelength range from 1500 nm to 1650 nm.     

Design of thermo-optic tunable optical filter based on Si/Air DBR and polymer Fabry–Perot microcavity in SOI

An integrated tunable optical filter (TOF) based on thermo-optic effect in silicon on insulator (SOI) rib waveguide is designed and simulated. The device is comprised of two high refractivity contrast Si/Air stacks, functioning as high reflectivity of DBRs (distributed Bragg reflectors) and separating by a variable refractive index polymer Fabry–Perot (F–P) cavity. The designed device exhibits Q = 24077, FWHM = 0.065 nm and finesse = 566. Wavelength tuning is achieved through thermal modulation of refractive variation of the cavity. As the cavity polymer is heated, the refractive index of the cavity decreases. When the temperature of cavity polymer changes within 105, the central wavelength gets a continuous 35 nm shift from 1530 nm to 1565 nm, which can operate the whole C-band in the WDM (wavelength division multiplexing) networks. Moreover, by calculating, the tuning sensitivity is about 0.33 nm/°C. Owing to the compact size and excellent characteristics of integration, the proposed component has a promising utilization in spectroscopy and optical communication.     

Influence of the structure parameters on the gain and noise figure in silicon parametric amplifiers based on SOI Rib waveguides

Gain and Noise figure (NF) characteristics in dual-pump parametric amplifier based on silicon on insulator (SOI) Rib waveguides are numerically investigated in the presence of nonlinear losses. The impact of structure parameters of the silicon optical parametric amplifiers (SOPAs) on the gain and the NF are also analyzed. The results show that both the height and the width of the silicon on insulator (SOI) can affect the gain and the NF of SOPAs. 354 nm bandwidth (3 dB) and 8.135 maximum gain can be achieved by tailoring the structure parameters of the SOI rib waveguides. Moreover, the dispersion and the effective mode area of SOI are also analyzed.     

Optimal asymmetrical back plane biasing for energy efficient digital circuits in 28 nm UTBB FD-SOI

In this work we propose an optimal back plane biasing (OBB) scheme to be used in a UTBB FD SOI technology that minimizes the energy per operation consumption of sub threshold digital CMOS circuits. By using this OBB scheme, simulations show that more than 30% energy savings can be obtained with low threshold voltage (LVT) devices in comparison with classic symmetric back plane biasing (SBB) schemes. Additionally, this OBB scheme allows to adjust the performance of the circuit with very small energy penalties. A very simple and intuitive model, for sub threshold digital CMOS circuits, was developed to justify the benefits obtained by OBB. The results predicted by the model are confirmed with extensive simulation results. We show that the OBB approach can be applied easily to a given circuit just based on the information provided by a logic simulation of the circuit (or even an analysis of its structure) and simple electrical simulations of the pMOS and nMOS transistors. Finally, we show that the variability in the energy consumption is improved by using OBB and suggests that new sizing methodologies must be studied to fully benefit from the wide back plane voltage range available in UTBB FD SOI technology for the design of robust energy efficient digital circuits.     

SOI抗总剂量辐射加固工艺栅氧可靠性研究

文章对采用了埋层二氧化硅抗总剂量加固工艺技术的SOI器件栅氧可靠性进行研究,比较了干法氧化和湿法氧化工艺的栅氧击穿电荷,干法氧化的栅氧质量劣于湿法氧化。采用更敏感的12.5nm干法氧化栅氧工艺条件,对比采用抗总剂量辐射加固工艺前后的栅氧可靠性。抗总剂量辐射加固工艺降低了栅氧的击穿电压和击穿时间。最后通过恒压法表征加固工艺的栅氧介质随时间击穿(TDDB)的可靠性,结果显示抗总剂量辐射加固工艺的12.5nm栅氧在常温5.5V工作电压下TDDB寿命远大于10年,满足SOI抗总剂量辐射加固工艺对栅氧可靠性的需求。     

采用环型运放的12-bit 40-MS/s采样保持电路设计实现

为了保证模数转换器转换速度和精度,本文基于0.18微米工艺,设计实现了一款应用于12-bit 40-MS/s流水线ADC前端的采样保持电路.所采用的环型结构运放,可以简化设计、且占用面积小;同时,采用绝缘体上硅工艺,可以消除栅压自举开关中开关管的衬偏效应,改善开关的线性度,提高采样保持电路的性能.采样保持电路面积是0.023平方毫米.测试结果表明：在1.5V供电电压下,采样保持电路功耗是3.5mW;在1MHz输入频率、40MHz采样频率下,该采样保持电路无杂散动态范围可以达到76.85dB,满足12-bit 40-MS/s流水线模数转换器应用需求.     

用于制备SOI材料的基于硅片键合和双层多孔硅剥离的薄外延硅膜转移技术

采用在阳极化反应时改变电流强度的办法 ,在高掺杂的 P型硅 (111)衬底上制备了具有不同多孔度的双层结构多孔硅层 .用超高真空电子束蒸发技术在多孔硅表面外延生长了一层高质量的单晶硅膜 .在室温下 ,该外延硅片同另一生长有热二氧化硅的硅片键合在一起 ,在随后的热处理过程中 ,键合对可在多孔硅处裂开 ,从而使外延的单晶硅膜转移到具有二氧化硅的衬底上以形成 SOI结构 .扫描电镜、剖面投射电镜、扩展电阻和霍尔测试表明 SOI样品具有较好的结构和电学性能