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1.
光电设备电子机柜布线工艺研究 总被引:5,自引:0,他引:5
作为信号和电能载体的导线,同时也是噪声的载体和外来噪声侵入设备的媒体。描述了噪声通过导线侵入设备内部的方式,通过降低噪声的途径确定了机柜布线的原则,介绍了布线的要求和方法,最后提出了用布线槽布线的建议。 相似文献
2.
串行和并行接口模式是A/D转换器诸多分类中的一种,但却是应用中器件选择的一个重要指标.在同样的转换分辨率及转换速度的前提下,不同的接口方式不但影响了电路结构,更重要的是将在高速数据采集的过程中对采样周期产生较大影响.本文通过12位串行ADC ADS7822和并行ADC ADS774与AT89C51的接口电路,给出二者采样时间的差异性. 相似文献
3.
Σ-ΔA/D转换技术及仿真 总被引:1,自引:0,他引:1
Σ-ΔA/D转换技术近年来颇受重视,因为基于该技术的A/D转换器能达到很高的分辨率(16bit以上),并另具一系列优点。本文对Σ-ΔA/D转换器的基本原理,包括过采样(Oversampling),噪声成形(NoiseShaping),以及数字抽取滤波(DigitalDecimationFiltering)等内容,均作了叙述。作者还对一个20bitΣ-Δ转换器的算法进行了计算机仿真。该转换器采用了高阶MASH噪声成形技术,而其数字抽取滤波部分则由梳状滤波器与级联的半带滤波器构成。文章中给出了仿真结果。 相似文献
4.
Rajiv Manohar G. Tripathi A.K. Srivastava A.K. Prajapati 《Journal of Physics and Chemistry of Solids》2006,67(11):2300-2304
Dielectric properties of polymer-liquid crystal mixture, having constituent polymer, poly-butyl methacrylate (PBMA) and liquid crystal, cholesteryl nonanoate, are reported as a function of frequency and temperature. The measurement has been done in a temperature range of 300-375 K and frequency range of 100 Hz-10 MHz. The dielectric permittivity and dielectric loss shows significant changes with the addition of polymer molecules in liquid crystal. The significant feature of composite formation is that the pure liquid crystal and polymer do not show dielectric relaxation in the frequency range covered, while the composite shows relaxation peak at a particular frequency. The optical transmittance of pure liquid crystal and composite has also been measured and compared. 相似文献
5.
Non-stoichiometric ternary chalcogenides (Zn,Fe)S were prepared in the film form by pyrolytic spray deposition technique, using air/nitrogen as the carrier gas. The precursor solution comprised of ZnCl2, FeCl2 and thiourea. The depositions were carried out under optimum conditions of experimental parameters viz. carrier gas (air/nitrogen) flow rate, concentration of precursor constituents, nozzle substrate distance and temperature of quartz substrate. The deposited thin films were later sintered in argon at 1073 K for 120 min.The structural, compositional and optical properties of the sintered thin films were studied. X-ray diffraction studies of the thin films indicated the presence of (Zn,Fe)S solid solution with prominent cubic sphalerite phase while surface morphology as determined by scanning electron microscopy (SEM) revealed a granular structure.The chemical composition of the resulting thin films as analyzed by energy dispersive X-ray analysis (EDAX) reflected the composition of the precursor solutions from which the depositions were carried out with Fe at% values ranging from 0.4 up to 33.SEM micrographs of thin films reveal that the grain sizes of the thin films prepared using air as carrier gas and N2 as carrier gas are in the vicinity of 300 and 150 nm, respectively.The diffuse transmittance measurements for thin films, as a function of wavelength reveal the dependence of direct optical band gap on Fe content and type of phase. 相似文献
6.
H.S RagabA Shehap M.S Abo EllilW.H Osman F.H Abd El-Kader 《Journal of Physics and Chemistry of Solids》2002,63(10):1839-1847
Ternary-phase ceramic system of Li2O Al2O3 4SiO2 doped with CuO, FeO and TiO2 has been prepared and subjected to dc electrical conductivity and thermally stimulated depolarization current (TSDC) measurements as a function of temperature (30-250 °C) and field strength. The electrical conductivity results are explained by assuming both ionic and electronic conduction mechanisms coexist with different contributions over the whole temperature range of experiments. TSDC spectra have been found to be characterized by a broad intense relaxation peak, which can be attributed to an ionic charge polarization. The broad relaxation transitions are apparently a result of the nonuniform nature of this process. Activation energies are calculated for both dc electrical conductivity and TSDC according to Arrhenius equation and initial rise method, respectively. 相似文献
7.
Michel Hébert 《Archive for Mathematical Logic》1991,31(2):133-143
Summary We give a syntactic characterization of (finitary) theories whose categories of models are closed under the formation of connected limits (respectively the formation of pullbacks and substructures) in the category of all structures. They are also those theories whose consistent extensions by new atomic facts admit in each component an initial structure (respectively an initial term structure), and also thoseT for whichM(T) is locally finitely multi-presentable in a canonical way. We also show that these two properties of theories are nonuniform. 相似文献
8.
S. Meenakshi B.K. Godwal I. Orgzall S. Tkachev 《Journal of Physics and Chemistry of Solids》2006,67(8):1660-1667
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes. 相似文献
9.
R.S. Gonnelli A. CalzolariD. Daghero G.A. UmmarinoV.A. Stepanov P. FinoG. Giunchi S. CeresaraG. Ripamonti 《Journal of Physics and Chemistry of Solids》2002,63(12):2319-2323
We studied the voltage and temperature dependency of the dynamic conductance of normal metal-MgB2 junctions obtained either with the point-contact technique (with Au and Pt tips) or by making Ag-paint spots on the surface of MgB2 samples. The fit of the conductance curves with the generalized BTK model gives evidence of pure s-wave gap symmetry. The temperature dependency of the gap, measured in Ag-paint junctions (dirty limit), follows the standard BCS curve with 2Δ/kBTc=3.3. In out-of-plane, high-pressure point-contacts we obtained almost ideal Andreev reflection characteristics showing a single small s-wave gap Δ=2.6±0.2 meV (clean limit). 相似文献
10.
Fillmore在[1]中得到一个定理:设A,T是Banach空间X上的线性变换,A有界,若Lat(A) Lat(T)且AT=TA,则T是A的多项式.在本文里,以此作为引理,讨论了Banach空间上可逆线性变换A在什么情况下,A-1可表示为A的多项式.本文最主要的结论是定理3.4:设X是Banach空间,A是X上的有界线性变换,且可逆,则A-1是A的多项式当且仅当A-1是A的局部多项式. 相似文献