STABLE DOUBLE LR ALGORITHM AND ITS ERROR ANALYSIS

In this paper, the normative matrices and their double LR transformation with origin shifts are defined, and the essential relationship between the double LR transformation of a normative matrix and the QR transformation of the related symmetric tridiagonal matrix is proved. We obtain a stable double LR algorithm for double LR transformation of normative matrices and give the error analysis of our algorithm. The operation number of the stable double LR algorithm for normative matrices is only four sevenths of the rational QR algorithm for reed symmetric tridiagonal matrices.     

Integrated Groups and Smooth Distribution Groups

In this paper, we prove directly that α-times integrated groups define algebra homomorphisms. We also give a theorem of equivalence between smooth distribution groups and α-times integrated groups.     

Controllable Magnetic Focusing of Cold Atoms on a Chip

We propose a new lens scheme to focus cold atoms by using a controllable inhomogeneous magnetic field from a square current-carrying wire fabricated on a chip. The spatial distributions of the magnetic field are calculated, and the results show that the generated magnetic field is a two-dimensional （2D） quadrupole one and can be used to focus cold atoms or a cold atomic beam. The dynamic processes of cold atoms passing through our square wire layout and its focusing properties are studied by using Monte Carlo simulations. Our study shows that the atomic clouds can be focused effectively by our magnetic lens scheme, and the focal length of the atomic lens and its radius of focused spot can be continuously changed by adjusting the current in the wires.     

一个组合分布模型及其参数估计

本文根据极值分布理论,提出了一个由原始分布和尾分布组成的组合分布模型,研究了组合分布模型中原始分布和尾分布的确定方法,建立了组合分布模型参数估计的加权最优化模型,实例计算说明,组合分布较好地反映了风险变量极值事件的风险。     

激光区熔再结晶SOI的杂质分布与迁移率研究

本文介绍一种确定ＳＯＩ／ＭＯＳ结构中沿硅薄膜厚度多子漂移分布和杂质分布的简单方法（其掺杂剖面是随机不均匀的）。这种方法基于使用一种耗尽型晶体管与栅控二极管的组合结构。作者列举在激光区熔再结晶多晶硅制的ＳＯＩ结构和ＳＯＳ结构上以相同工艺制作器件的对比研究结果。由这些结果可见，在包含有晶粒间界和子晶粒间界的ＳＯＩ薄膜中，沿膜厚的载流子迁移率是恒定的，而且远远超过ＳＯＳ膜中的迁移率。     

低温硅双极晶体管基区优化设计

常规双极晶体管在７７Ｋ下电流增益和频率性能都严重退化。本文首先分析了低温双极晶体管基区Ｇｕｍｍｅｌ数，基区方块电阻，渡越时间和穿通电压等参数与温度及基区掺杂的关系，然后讨论了低温双极器件基区的优化设计问题。     

非晶钛铝薄膜结构的RDF分析

非晶钛铝薄膜结构的ＲＤＦ分析王永瑞，邹　骐，刘震云，卢党吾（上海交通大学材料科学系，上海２０００３０）多年来，人们通过检测非晶、多晶薄膜的Ｘ射线衍射￣［１］或中子衍射呈径向对称分布的强度分布，导出其约化密度函数Ｇ（ｒ）和径向分布函数（ＲＤＦ），进而计...