XIAP表达水平对5-Fu诱导肝癌细胞凋亡的影响

目的研究XIAP mRNA及蛋白表达水平对不同剂量5-氟尿嘧啶（5-fluorouracil,5-Fu）诱导人肝癌细胞HepG2凋亡的影响。方法脂质体介导含XIAP基因全长的质粒pef-XIAP转染人肝癌细胞HepG2,采用逆转录聚合酶链反应（RT—PCR）及western blotting检测XIAP基因和蛋白表达水平。通过不同剂量5-Fu诱导细胞凋亡,使用CCK-8试剂通过比色法分析检测5-Fu对转染pef-XIAP的HepG2细胞生长活性的抑制作用。结果各组HepG2细胞在不同剂量的5-Fu诱导下发生凋亡、与普通HepG2细胞组比较．转染XIAP基因的HepG2细胞组的凋亡率显著降低。结论XIAP基因在人肝癌细胞HepG2中的高表达可以明显降低化疗药物5-Fu诱导的细胞凋亡,其可能在肝癌化疗耐药中起一定作用。     

低卤素无铅焊锡膏研制

针对当前高卤素无铅焊锡膏腐蚀性较大的缺点,研制出一种低卤素无铅焊锡膏,并测试其主要性能参数,如黏度、润湿性、卤素含量、坍塌性等。结果表明:该焊锡膏的黏度为195Pa·s,卤素质量分数为0.023%,其他性能符合IPCJ—STD—005等行业要求。     

超薄芯片叠层封装器件热可靠性分析

采用通用有限元软件MSC.Marc,模拟分析了一种典型的多层超薄芯片叠层封装器件在经历回流焊载荷后的热应力及翘曲分布情况,研究了部分零件厚度变化对器件中叠层超薄芯片翘曲、热应力的影响。结果表明:在整个封装体中,热应力最大值(116.2 MPa)出现在最底层无源超薄芯片上,结构翘曲最大值(0.028 26 mm)发生于模塑封上部边角处。适当增大模塑封或底层无源芯片的厚度或减小底充胶的厚度可以减小叠层超薄芯片组的翘曲值;适当增大底层无源超薄芯片的厚度(例如0.01 mm),可以明显减小其本身的应力值10 MPa以上。     

如何配置SMT生产线

目前SMT生产线已被广泛应用于大规模电子组装生产上,对SMT设备选择、组线设计等问题作了实用性论述,希望对企业选择SMT设备有一定的帮助。     

真空环境下的共晶焊接

共晶焊接是微电子组装中一种重要的焊接工艺。文章简要介绍了共晶焊接的工作原理以及共晶焊料如何选用和常用共晶焊料的性能特性。然后比较了几种共晶焊接设备的优缺点,得出用真空可控气氛共晶炉在真空环境下完成共晶焊接能有效防止共晶焊接过程中氧化物的产生,大大降低空洞率,从而提高焊接质量。它同样适用于多芯片组件的一次共晶。对真空环境下影响共晶焊接质量的真空度、保护性气氛、焊接过程中的温度曲线、焊接时的压力等条件做了探讨,得出了几种最优的工艺方案,能适用于大部分的共晶焊接工艺。     

Shock wave working of high-T c materials

Abstract

The properties of high T_c-ceramics (Y-123, Bi-1112, Bi-4334, Bi-4457, (Bi-Pb)-4457) under shock loading and subsequent heat treatment were investigated. The peculiarities of their structure, tecture creation, changes of superconductivity parameters depending on loading conditions at P～ 10GPa Were revealed, and regimes of heat treatment were determined. The possibilities of obtaining crack-free cylindrical superconducting shields as well as strong metal high-T^cceramic joints were demonstrated.     

梁柱节点不同强度等级混凝土的施工

结合工程施工配合,提出当柱子混凝土强度等级大于梁混凝土强度等级（尤其高层建筑）时的施工方法和施工中应当注意的问题.     

SMT温度场的数学模型

SMT再流焊温度场是非常复杂的,因而在设定再流焊工艺时,通常采用反复试验的方法,不仅耗费巨大的人力、物力,并且很难建立一个好的工艺.利用传热学的知识结合再流焊通用的红外加热风再流焊焊接设备,建立再流焊温度场的数学模型,从而为再流焊的仿真打下基础.     

Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> with Sn interlayers

The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al₂O₃ were diffusion-soldered at temperatures between 250°C and 400°C by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) η-(Cu_0.99Au_0.01)₆Sn₅/δ-(Au_0.87Cu_0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu_0.99Au_0.01)₆Sn₅ and (Au_0.87Cu_0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm² could be attained under the bonding condition of 300°C for 20 min.     

Relaxation mechanism of rotational type in fracture of weld joints for austenic steels

Studied is the mesoscale behavior of plastic deformation and fracture of weld joints for austenic steels. Large-scale rotational modes of deformation in heat affected zones are identified with the first stage of formation of band structures; it is related to the “traveling neck” phenomenon in the base metal. The second stage is connected with crack generation and the state of affairs in the heart-affected zone.