Resistance switching memory in perovskite oxides

The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms.     

微波组件中多层陶瓷电容器装联工艺研究

多层陶瓷电容器(MLCC)在微波模块或组件电子装联焊接过程中,经常出现裂纹、断裂故障。通过模拟MLCC多种焊接方式,制备样品,进行DPA分析,发现目前常用的手工焊接方式会使MLCC产生不同程度的裂纹缺陷。这些裂纹在后续的环境试验中将不断扩大,从而导致产品失效。分析了MLCC裂纹产生的原因和机理,给出了MLCC无损伤的焊接方式。     

一种提高射频电缆焊接质量的工艺方法

射频连接器与射频电缆被广泛应用于军民品的通信设备中,其关键工序射频电缆芯线与射频连接器插针的连接常采用手钳式阻焊工具。由于射频电缆较细,手钳式阻焊工具在阻焊操作时,要求电装工双手不能抖动,否则易产生废品。通过对手钳式阻焊工具进行技术改进,重新设计了一种预压紧方式的阻焊装置,并通过试验确定了电阻焊接头的结构形式和尺寸,提高了手工阻焊成品率和生产效率,降低了对电装工的技能要求。     

介质滤波器银层厚度与附着力对耐焊接热影响

通过化学方法制作无损伤坯体和银层的测量台阶,采用油墨制作测量台阶的图案,通过测高仪精确测量出银层厚度。将不同银层厚度的介质滤波器做耐焊接热可靠性试验,得到多孔介质滤波器最合适的银层厚度区间。结果表明,多孔介质滤波器烧银温度在820℃时,银层附着力达到最大点;采用化学法制作的测量台阶,通过接触法测量误差最小;多孔介质滤波器银层厚度≥0.015mm,能满足耐焊接热的可靠性要求。     

Promotion effect of Pt on a SnO2–WO3 material for NOx sensing

Metal-oxide nanocomposites were prepared over screen-printed gold electrodes to be used as room-temperature NO_x (nitric-oxide (NO) and nitrogen dioxide (NO₂)) sensors. Various weight ratios of SnO₂–WO₃ and Pt loadings were used for NO sensing. The sensing materials were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM) and BET surface analysis. The NO-sensing results indicated that SnO₂–WO₃ (1:2) was more effective than other materials were. The sensor response (S=resistance of N₂/resistance of NO=R_N2/R_NO) for detecting 1000 ppm of NO at room temperature was 2.6. The response time (T₉₀) and recovery time (TR₉₀) was 40 s and 86 s, respectively. By further loading with 0.5% Pt, the sensor response increased to 3.3. The response and recovery times of 0.5% Pt/SnO₂–WO₃ (1:2) were 40 s and 206 s, respectively. The linearity of the sensor response for a NO concentration range of 10–1000 ppm was 0.9729. A mechanism involving Pt promotion of the SnO₂–WO₃ heterojunction was proposed for NO adsorption, surface reaction, and adsorbed NO₂ desorption.     

不同直径碳纳米管的抗电化学氧化性

本文比较了由化学气相沉积法制备的不同直径(在100 nm以内)的多壁碳纳米管(CNT)的抗电化学氧化性.将CNT电极于1.2 V(vs.RHE)下电氧化120 h,记录氧化电流~时间变化曲线;X射线光电子能谱(XPS)分析氧化前后CNT的表面化学组成.结果表明,随着CNT直径的减小,其氧化电流降低,但其中以为10~20 nm的CNT电极氧化电流最小,表面氧的增量也最小,即被氧化的程度最低,抗电化学氧化性最强.根据不同直径CNT的缺陷位、不定型碳的丰度和碳原子的应力能,分析了其抗电化学氧化性差异的原因.     

陶瓷滤波器及无铅焊接

国际上三大主要组织制定出自己的无铅标准这一国际背景,陶瓷滤波器作为一种必需的元件必须实现无铅化生产,着重介绍了陶瓷滤波器无铅焊接工艺:原材料(引线,陶瓷基片)的无铅化及焊接辅料(助焊剂,焊锡)无铅化;按工艺顺序详细介绍了浸焊锡、浸助焊剂、基片插入、正面焊接和反面焊接,并针对每一个工序的要求提出了可行的解决方案.最后分析了无铅化生产对国内陶瓷滤波器的影响.     

无铅再流焊的兼容性研究

在再流焊无铅化过程中,再流焊的有铅要素与无铅要素的兼容性直接影响产品质量.本文对有铅再流焊炉与SAC无铅焊膏和OSP、ENIG无铅焊盘镀层的兼容性进行了初步试验,证明三者有较好兼容性.     

Sn-Ag-Cu焊料中金属间化合物对焊接性能的影响

讨论了Sn-Ag-Cu焊料与Cu焊盘间在回流焊过程中形成的金属间化合物(IMC)的种类、形态,Ag含量和Cu含量对IMC的影响,IMC在老化过程中的生长演变及其对焊接性能的影响。结果表明:Sn-Ag-Cu焊料与Cu焊盘之间的金属间化合物主要是Cu6Sn5和长针状的Ag3Sn,Ag和Cu的添加对组织有明显细化作用,但过量添加会影响IMC的性能。IMC的演变主要是与老化温度、老化时间有关,较厚的IMC不利于焊接性能的提高。     

CH4,CO2和O2制合成气反应中载体对Ni催化剂抗氧化性能的影响

在ＣＨ４、ＣＯ２ 催化氧化制合成气反应中, Ｎｉ／Ａｌ２Ｏ３ 催化剂在高温下生成ＮｉＡｌ２Ｏ４ 尖晶石,是导致催化剂失活的一个重要因素． 通过向载体（Ａｌ２Ｏ３）中添加各种氧化物, 使得催化剂的抗氧化性能得到改善． 并运用ＴＰＲ、ＸＲＤ对催化剂进行表征, 发现催化剂的抗氧化性顺序为： Ｎｉ／ＣａＯ－Ａｌ２Ｏ３ ＞ Ｎｉ／ＭｇＯ－Ａｌ２Ｏ３ ＞ Ｎｉ／ＣｅＯ２－Ａｌ２Ｏ３ ＞ Ｎｉ／Ｌａ２Ｏ３－Ａｌ２Ｏ３ ＞ Ｎｉ／Ｙ２Ｏ３－Ａｌ２Ｏ３ ＞ Ｎｉ／ＴｉＯ２－Ａｌ２Ｏ３＞ Ｎｉ／Ａｌ２Ｏ３＞ Ｎｉ／Ｆｅ２Ｏ３－Ａｌ２Ｏ３．