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71.
Yuanxun Liao Pengfei Zhang Stephen Bremner Santosh Shrestha Shujuan Huang Gavin Conibeer 《Advanced functional materials》2017,27(21)
Resonant tunneling through a 4 nm nanocrystal Ge (nc‐Ge) layer and a 2.4 nm monolayer of Si colloidal quantum dots (QD) is achieved with 0.7 nm amorphous Al2O3 (a‐Al2O3) barriers. The nc‐Ge resonant tunneling diode (RTD) demonstrates a peak‐to‐valley current ratio (PVCR) of 8 and a full width at half maximum (FWHM) of 30 mV at 300 K, the best performance among RTDs based on annealed nanocrystals. The Si QD RTD is first achieved with PVCRs up to 47 and FWHMs as small as 10 mV at room temperature, confirming theoretically expected excellences of 3D carrier confinements. The high performances are partially due to the smooth profile of nc‐Ge layer and the uniform distribution of Si QDs, which reduce the adverse influences of many‐body effects. More importantly, carrier decoherence is avoided in the 0.7 nm a‐Al2O3 barriers thinner than the phase coherence length (≈1.5 nm). Ultrathin a‐Al2O3 also passivates well materials and suppresses leakage currents. Additionally, the interfacial bandgap of ultrathin a‐Al2O3 is found to be similar to the bulk, forming deep potential wells to sharpen transmission curves. This work can be easily extended to other materials, which may enable resonant tunneling in various nanosystems for diverse purposes. 相似文献
72.
Muhammad Hamid Raza Kaveh Movlaee Salvatore Gianluca Leonardi Nicolae Barsan Giovanni Neri Nicola Pinna 《Advanced functional materials》2020,30(6)
Hierarchical core–shell (C–S) heterostructures composed of a NiO shell deposited onto stacked‐cup carbon nanotubes (SCCNTs) are synthesized by atomic layer deposition (ALD). A film of NiO particles (0.80–21.8 nm in thickness) is uniformly deposited onto the inner and outer walls of the SCCNTs. The electrical resistance of the samples is found to increase of many orders of magnitude with the increasing of the NiO thickness. The response of NiO–SCCNT sensors toward low concentrations of acetone and ethanol at 200 °C is studied. The sensing mechanism is based on the modulation of the hole‐accumulation region in the NiO shell layer upon chemisorption of the reducing gas molecules. The electrical conduction mechanism is further studied by the incorporation of an Al2O3 dielectric layer at NiO and SCCNT interfaces. The investigations on NiO–Al2O3–SCCNT, Al2O3–SCCNT, and NiO–SCCNT coaxial heterostructures reveal that the sensing mechanism is strictly related to the NiO shell layer. The remarkable performance of the NiO–SCCNT sensors toward acetone and ethanol benefits from the conformal coating by ALD, large surface area of the SCCNTs, and the optimized p‐NiO shell layer thickness followed by the radial modulation of the space‐charge region. 相似文献
73.
硅基高密度电容器是利用半导体3D深硅槽技术和应用高介电常数(高K)材料制作的电容。相比钽电容和多层陶瓷电容(MLCC),硅基电容具有十年以上的寿命、工作温度范围大、容值温度系数小以及损耗低等优点。文章研究原子层沉积(ALD)制备的Al2O3薄膜的介电特性,通过优化ALD原子沉积温度和退火工艺,发现在沉积温度420℃和O3气氛退火5 min下,ALD生长的Al2O3薄膜击穿强度可大于0.7 V/nm,相对介电常数达8.7。制成的硅基电容器电容密度达到50 nF/mm2,漏电流小于5 nA/mm2。 相似文献
74.
张红梅 《电子工业专用设备》2014,(6):32-36
加热区是真空炉的核心部分,加热区设计是否合理直接影响着真空炉的使用性能及其运营成本。运用有限元仿真对典型真空炉加热区的热场进行分析,并通过实验数据,进一步验证真空炉加热区的设计合理性,掌握了其温场的实际温度分布情况,为今后设计类似炉型的真空炉加热区提供重要参考依据。 相似文献
75.
Tailored for wireless local area networks, the present paper proposes a cross‐layer resource allocation scheme for multiple‐input multiple‐output orthogonal frequency‐division multiplexing systems. Our cross‐layer resource allocation scheme consists of three stages. Firstly, the condition of sharing the subchannel by more than one user is studied. Secondly, the subchannel allocation policy which depends on the data packets’ lengths and the admissible combination of users per subchannel is proposed. Finally, the bits and corresponding power are allocated to users based on a greedy algorithm and the data packets’ lengths. The analysis and simulation results demonstrate that our proposed scheme not only achieves significant improvement in system throughput and average packet delay compared with conventional schemes but also has low computational complexity. 相似文献
76.
77.
可见光LED的进展——超高亮度LED及应用(二)张万生梁春广(电子工业部第十三研究所,石家庄,050051)4超高亮度发光管的发展[9~14]4.1InGaAlPDHLED发光强度达到坎德拉级发光管的高亮度化一直是半导体材料和器件的前沿课题之一,超高... 相似文献
78.
79.
铁电180°畴结构在超声波作用下将被诱导出沿畴壁传播的铁电畴层波,其电场导致了构成铁电180°畴结构的晶体的电光效应,畴结构的光率体发生了改变,晶体的主折射率受到激发铁电畴层波的超声波的调节。这一效应在声光控制和超声检测方面有应用价值。 相似文献
80.
Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer 下载免费PDF全文
Yuanhong Gao Youdong Shao Lijia Yan Hao Li Yantao Su Hong Meng Xinwei Wang 《Advanced functional materials》2016,26(25):4456-4463
Charge injection at metal/organic interface is a critical issue for organic electronic devices in general as poor charge injection would cause high contact resistance and severely limit the performance of organic devices. In this work, a new approach is presented to enhance the charge injection by using atomic layer deposition (ALD) to prepare an ultrathin vanadium oxide (VOx) layer as an efficient hole injection interlayer for organic field‐effect transistors (OFETs). Since organic materials are generally delicate, a gentle low‐temperature ALD process is necessary for compatibility. Therefore, a new low‐temperature ALD process is developed for VOx at 50 °C using a highly volatile vanadium precursor of tetrakis(dimethylamino)vanadium and non‐oxidizing water as the oxygen source. The process is able to prepare highly smooth, uniform, and conformal VOx thin films with precise control of film thickness. With this ALD process, it is further demonstrated that the ALD VOx interlayer is able to remarkably reduce the interface contact resistance, and, therefore, significantly enhance the device performance of OFETs. Multiple combinations of the metal/VOx/organic interface (i.e., Cu/VOx/pentacene, Au/VOx/pentacene, and Au/VOx/BOPAnt) are examined, and the results uniformly show the effectiveness of reducing the contact resistance in all cases, which, therefore, highlights the broad promise of this ALD approach for organic devices applications in general. 相似文献