Experience Gained Using Second-Moment Closure Modeling for Transitional Flows Due to Boundary Layer Separation

This paper presents detailed information on the experience gained during the attempts to model a set of transitional flows due to boundary layer separation. These flows are developed on a flat plate with a semi-circular leading edge and they have been coded by the ERCOFTAC Special Interest Group on Transition, as T3L flows. Different freestream velocities and turbulence intensities configure these transitional flows and, by consequence, govern the transition mechanism, resulting in larger or smaller transitional regions. The modeling of the T3L flows has been performed by adopting a low-Reynolds number second-moment closure turbulence model. The results showed satisfactory agreement with the experimental measurements, although some difficulties regarding successful convergence have been faced. The final conclusion is that turbulence modeling can present quite accurate results for transitional flows without any additional use of ad-hoc modifications or additional equations based on various transition models and intermittency transport modeling.     

脉冲激光LGA法钛表面氮化及其XRD和SEM微观分析

用调Ｑ－ＹＡＧ和ＸｅＣｌ脉冲激光在钛表面以激光气体合金化方法生成氮化钛层，用Ｘ射线衍射仪分析了不同激光能量、不同Ｎ２气压不同作用脉冲数等条件下ＴｉＮ的结晶取向、结晶形态、氮化程度，用扫描电镜观察了它们的微观结构，对脉冲激光的ＬＧＡ法机理进行了探讨，也发现了用ＬＧＡ法对Ｍｏ的氮化生成Ｍｏ２Ｎ．     

高层印制线路板正面临的对位挑战

封装工业正在推动着印制线路板技术水平朝着半导体要求的方向发展。高密度印制线路板正广泛用于网络路由器、自动测试设备和服务器领域。高密度要求(>150 IO/cm~2)正成为客户的普通需求。为满足现有的高密度封装要求,由于线宽、线距和通孔孔径正接近传统制作极限,普遍的方法就是不断增加印制线路板的层数。这些特征正驱动着印制线路板在基材、图像转移、蚀刻、电镀、阻焊、测试流程和对位系统的变化。此文主要讲述了印制线路板特性的变化趋势和利用对位模式和雷利分布去预测满足高级对位要求的能力以及印制线路板各流程中有关对准度的控制要点。     

非线性编辑中特效图文素材的应用

Cool 3D是一款特效图文制作软件，适用于动画片段、3D文字、图形等制作场合。Cool 3D中制作的特效素材应用于非线性编辑中，可以丰富素材的表现形式，提高节目编辑制作的整体质量。     

Tail probabilities of the limiting null distributions of the Anderson–Stephens statistics

For the purpose of testing the spherical uniformity based on i.i.d. directional data (unit vectors) z_i, i=1,…,n, Anderson and Stephens (Biometrika 59 (1972) 613–621) proposed testing procedures based on the statistics S_max=max_u S(u) and S_min=min_u S(u), where u is a unit vector and nS(u) is the sum of squares of u′z_i's. In this paper, we also consider another test statistic S_range=S_max−S_min. We provide formulas for the P-values of S_max, S_min, S_range by approximating tail probabilities of the limiting null distributions by means of the tube method, an integral-geometric approach for evaluating tail probability of the maximum of a Gaussian random field. Monte Carlo simulations for examining the accuracy of the approximation and for the power comparison of the statistics are given.     

Temperature factor effect on the structure of the separated flow within a supersonic gas stream

The effect of the temperature factor, that is, the ratio of the body temperature to the freestream stagnation temperature, on the structure of the separated flow formed in the presence of a concave corner in a supersonic stream is studied. The strong influence of the temperature factor on the separation zone length and the flow-generated aerodynamic characteristics is established. It is shown that for fairly large deflection angles this flow cannot be described by free interaction, or triple deck, theory.     

基于积分方法的二维平行剪切层声远场预测

本文采用二维Ffowcs Williams＆Hawkings(FW-H)方程对平行剪切层远声场辐射特性进行了研究。近流场时间精确数据通过计算气动声学(Computational Aeroacoustics,CAA)技术数值模拟获得,声远场信息则通过FW-H方程对近流场内的可穿透积分面进行积分获得。该方法首先采用具有解析解的涡/尾缘干涉问题进行了校核,进一步采用CAA/FW-H匹配技术对二维平行剪切层声辐射问题进行了预测,计算结果表明,积分解与计算域内的CAA数值解吻合较好。     

胶束薄层色谱法测定食品及药用胶囊中的合成食用色素

在聚酰胶片上以13%SDBS(十二烷基苯磺酸钠)+7%Triton X-100〔聚乙二醇-对-(1.1,3,3-四甲基)丁基苯基醚〕+(2+3)氨水(1+5+1)为展开剂,用胶束薄层色谱法分离和测定了柠檬黄、亮蓝、苋菜红、胭脂红和赤藓红。测定波长分别为440、632、535、525和528 nm,线性范围分别为0.1～2、0.05～1、0.05～1、0.05～1和0.05～1μg/斑点。方法用于测定软饮料糖果及药用胶囊中的合成色素,获得了满意的结果。此外,还对展开剂的最佳组成进行了单纯形法优化。     

LB技术制备大面积超薄PMMA抗蚀层的研究

采用自行研制的ＬＢ自动提膜装置，制备出大面积（１０×８ｃｍ２）、高质量的ＰＭＭＡ超薄抗蚀剂膜，并将其用于高分辨率铬掩模版的研制。通过电子束曝光，湿法蚀刻，制作了分辨率优于０．５μｍ，特征线宽０．３８μｍ的４（１００ｍｍ）铬掩模版。     

Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry

Atomic layer epitaxy or ALE has proven to be useful for the growth of epitaxial layers of high uniformity, good quality, and well-controlled thickness. In this study, we have carried out in-situ monitoring during the atmospheric pressure ALE of CdTe on GaAs (100) substrates using spectroscopic ellipsometry (SE). The susceptor temperature, reactant partial pressures, as well as the flow and flush duration for each precursor are crucial process variables for ALE growth. Growth was carried out for 20–25 cycles under different sets of these process conditions during the experiment and in-situ SE was used to verify the presence of layer-by-layer growth, which enabled the quick determination of the process window. We observed ALE growth of CdTe at 300°C, supporting the explanation that the growth of CdTe occurs via a surface catalyzed decomposition of the Te precursor di-isopropyltelluride (DIPTe). Investigation of ALE mode growth behavior for different susceptor temperatures and DIPTe flush times indicated that the growth was limited by competition between desorption and reaction of the adsorbed DIPTe species on the Cd terminated surface.