CMOS／SOSCC4066器件的可靠性研究

本文介绍了CMOS/SOS CC4066器件长期可靠性试验结果。对失效器件的分析表明,硅-蓝宝石技术没有新的失效机理。该器件的可靠性不低于国内体硅MOS IC能达到的水平,并接近“七专”器件的水平。     

Qualification of plastic encapsulated microcircuits (PEM) for avionicsBased on ``Plastic Encapsulated Microcircuits (PEM) Qualification Testing'''', by J. A. Scalise, which appeared in the Proceedings of the 46th Electronic Components and Technology Conference, Orlando, FL, U.S.A., 28–31 May 1996, pp. 392–397. © 1996 IEEE.

Microcircuit package qualification testing is used to establish the reliability of integrated circuit processes and devices as they relate to part packaging. This paper presents the results of package qualification tests conducted on plastic encapsulated microcircuits (PEMs) and plastic discrete devices (diodes, transistors) used in avionics applications. Highly accelerated stress test (HAST) and temperature cycle (TC) test results, including part failure mechanisms and associated failure rates, are provided. A variety of plastic package styles and integrated circuit functions have been tested. Examples of package styles tested include small outline (SO), plastic leaded chip carrier (PLCC), thin small outline package (TSOP), plastic quad flat package (PQFP) and plastic dual-in-line (PDIP).Manufacturers' devices have been evaluated and various plastic compounds have been compared to determine which provide optimum reliability. The testing showed that package qualification performance of PEMs is affected by type of compound, passivation (including die coat) and die size. HAST failures are caused by moisture penetration of the package while temperature cycle failures result from coefficient of thermal expansion (CTE) mismatch effects.     

Reliability of III–V based heterojunction bipolar transistors

This paper reviews the reliability of III-V based heterojunction bipolar transistors (HBTs). These devices have many potential advantages over other solid-state microwave devices. However, because of the tradeoff between performance and reliability, they are not being used to any great extent in power microwave applications. In the type of III-V HBT device most fully developed, the AlGaAs/GaAs HBT, leakage currents play a major role in the dominant mode of degradation. Because low-frequency noise is related to these leakage currents it has been used extensively in the analysis of the performance and reliability limitations of these devices. The reliability of other types of III-V HBT devices, such as InGaP/GaAs and InP based devices, is also discussed.     

HFC网络回传通道设计分析及其关键技术

提出HFC网络回传通道设计的可靠性、开放性、扩展性和实用性原则 ,阐明这四大设计原则的准确含义 ,指明正、反向通道设计的异同。分析回传通道设计的 3项关键技术 :控制汇聚噪声 ,实施电平均衡 ,防止回传通道过激励而发生信道阻塞。     

Bounds on convex reliability functions with known first moments

In this paper, upper and lower bounds are derived for convex reliability functions (or survival functions) with known first n moments. The case where the mean and the variance are given (n = 2) is discussed in details and explicit expressions are provided. Extensions for n ? 3 moments are described. Comparisons with existing bounds are performed.     

美国可靠性分析中心元器件管理计划

介绍了美国可靠性分析中心制定的元器件管理计划。     

Joint availability of systems modelled by finite semi–markov processes

Consider a repairable system at the time instants t and t + x, where t, x ≥0. The joint availability of the system at these time instants is defined as the probability of the system being functional in both t and t + x. A set of integral equations is derived for the joint availability of a system modelled by a finite semi–Markov process. The result is applied to the semi–Markov model of a two–unit system with sequential preventive maintenance. The method used for the numerical solution of the resulting system of integral equations is a two–point trapezoidal rule. The system of implementation is the matrix computation package MATLAB on the Apple Macintosh SE/30. The numerical results obtained by this method are shown to be in good agreement with those from simulation.     

半导体器件可靠性试验的计算机控制

介绍了半导体器件可靠性试验自动控制过程，详细探讨了系统控制原理和软件设计思想，给出了主要程序框图及测试实例，说明了该自动控制测试方法的可行性和正确性。     

On the effects of non-linear elements in the reliability-based optimal design of stochastic dynamical systems

The aim of the present paper is to study the effects of non-linear devices on the reliability-based optimal design of structural systems subject to stochastic excitation. One-dimensional hysteretic devices are used for modelling the non-linear system behavior while non-stationary filtered white noise processes are utilized to represent the stochastic excitation. The reliability-based optimization problem is formulated as the minimization of the expected cost of the structure for a specified failure probability. Failure is assumed to occur when any one of the output states of interest exceeds in magnitude some specified threshold level within a given time duration. Failure probabilities are approximated locally in terms of the design variables during the optimization process in a parallel computing environment. The approximations are based on a local interpolation scheme and on an efficient simulation technique. Specifically, a subset simulation scheme is adopted and integrated into the proposed optimization process. The local approximations are then used to define a series of explicit approximate optimization problems. A sensitivity analysis is performed at the final design in order to evaluate its robustness with respect to design and system parameters. Numerical examples are presented in order to illustrate the effects of hysteretic devices on the design of two structural systems subject to earthquake excitation. The obtained results indicate that the non-linear devices have a significant effect on the reliability and global performance of the structural systems.     

强夯处理红粘土沉降试验研究

红粘土作为高填方体的底层地基,处理其沉降和不均匀性沉降是高填方工程研究的重点。以某机场红粘土高填地基的处理为例,通过沉降分析和方案比选开展强夯处理试验研究。根据场区内不同覆土厚度,采用不同能级进行强夯处理试验确定了合理的施工工艺和参数。通过施工中沉降观测,施工后地基土的物理力学指标试验、载荷试验和工后沉降观测,强夯处理取得了良好的效果,满足设计要求。指导大面积施工时,在质量、造价、工期上都取得了成功。