无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

傅里叶变换红外光谱与拉曼光谱分析碳青霉烯药物亚胺培南的结构特征

本文采用傅里叶变换红外光谱和激光拉曼光谱对碳青霉烯药物亚胺培南进行光谱检测,并对其的分子振动光谱与结构特征进行分析和探讨,分析了亚胺培南在固相状态下的结构形式,从而为药物合成及质量控制提供了重要的参考价值。     

A high-pressure Raman and X-ray diffraction study of the perovskite SrCeO3

A high-pressure structural study of SrCeO₃ has been performed at room temperature by Raman spectroscopy and X-ray diffraction up to 32 and 45 GPa, respectively. A first-order reversible phase transition is observed at about 12 GPa in both techniques. A second weak structural change, taking place between 18 and 25 GPa, can be suspected from Raman data. The increase in the number of Raman bands and diffraction lines is an indication that the symmetry is lowered and the compound does not evolve towards the ideal cubic perovskite structure. A Rietveld analysis of X-ray data was performed for the low-pressure phase and the atomic positions and the cell lattice parameters variations are reported in this paper. The volume compressibility derived from Raman modes (5.6×10⁻¹² Pa⁻¹), involving mainly bond-stretching for each type of polyhedron, is found to be close to the one obtained from volume cell variations measured by X-ray diffraction (7.9×10⁻¹² Pa⁻¹).     

混杂配体金属簇合物的分子振动光谱与结构

由于原子簇化合物在催化，生物活性，功能材料等方面所呈现的重要性，使其成为无机和物理化学最重要的研究领域之一。文章中和谱学方法对一些具有混配体的过渡金属簇合物的结构及其两者之间的关系进行.     

Vibrational spectra of (NH4)3ZnCl5

IR and Raman spectra of (NH₄)₃ZnCl₅ have been recorded. The observed spectra have been analysed on the basis of the vibrations of ZnCl ₄ ²⁻ and NH ₄ ⁺ ions. The appearance of multiple Raman bands indicates the presence of two different types of ammonium ions. The effect of anisotropic crystalline field over the ZnCl₄ and NH₄ tetrahedra is also discussed. The assignment of internal modes has been verified by the potential energy distribution calculations.     

Self-organized ZnAl2O4 nanostructures grown on -sapphire

Self-organized ZnAl₂O₄ nanostructures with the appearance (in SEM) of high aspect ratio horizontal nanowires are grown on uncatalysed c-sapphire by vapour phase transport. The nanostructures grow as three equivalent crystallographic variants on c-sapphire. Raman and cathodoluminescence spectroscopy confirm that the nanostructures are not ZnO and TEM shows that they are the cubic spinel, zinc aluminate, ZnAl₂O₄, formed by the reaction of Zn and O with the sapphire substrate.     

微波BJT超宽带低噪声放大器的设计

本文给出了一种频带覆盖达１０－１６００ＭＨｚ的微波ＢＪＴ超宽带低噪声放大器的设计方法，从微波ＢＪＴ的噪声模型出发，通过拟合５０Ω源阻抗下微波ＢＪＴ的噪声系数ＮＦ５０和Ｓ参数来提取其噪声参数，然后根据增益，噪声及驻波比要求优化设计放大器，使放大器在超宽带范围内获得平坦增益和低噪声，本文所给出的微波ＢＪＴ惨数提取及放大器优化设计方法已由实验结果所验证。     

一种新颖的半导体光放大器镀膜监控方法

本文介绍了一种在半导体光放大器镀膜过程中监测端面反射率的简单而有效的方法。理论模型的建立考虑了光放大器的漏电流和自发发射速率随载流于浓度的非线性变化，并且基于实验测量的ＰＩ（输出功率与注入电流）曲线，采用曲线拟合的方法来修正一些依赖于器件的参数，理论计算结果与有关文献的测量结果较好地吻合。     

A 24-GHz Patch Array with a Power Amplifier/Low-Noise Amplifier MMIC

This paper presents an active patch array designed at 24 GHz. It can be used as a front-end component for a phased array. A series resonant array structure is chosen which is compact and easy excite. With 5 elements, the array proved a 12-dB antenna gain. A power amplifier and a low noise amplifier are designed on a single GaAs chip (PALNA). Bias switch is used in the PALNA, which greatly reduces the switch loss in a transceiver and increases the efficiency. 20-dB small signal gain is achieved in both power amplifier and low noise amplifier. The active patch array is built by the combination of the patch array and PALNA. The measured active gain of this antenna is 35-dB for the PA mode and 31-dB for the LNA mode. This active patch array can obtain an EIRP of 34 dBm with a total radiated power of 22dBm and a maximum PAE of 32%. To check the noise performance, we applied sources at both normal temperature and 77K (liquid nitrogen) and extracted the noise figure (3.5 dB) of the active antenna by the Y factor method. The results proved that the active antenna is working efficiently as both a transmitting and receiving antenna.     

2.5Gb/s和3.125Gb/s速率级0.35μmCMOS限幅放大器

采用了TSMC0.35μm CMOS工艺实现了可用于SONET/SDH2.5Gb/s和3.125Gb/s速率级光纤通信系统的限幅放大器。通过在芯片测试其最小输入动态范围可达8mVp—p，单端输出摆幅为400mVp-p，功耗250mW，含信号丢失检测功能，可以满足商用化光纤通信系统的使用标准。