自动小区规划的实际应用考虑

利用自动小区规划(ACP)进行深度RF优化是近年来优化工作的一个研究热点。从ACP的理论基础和一般流程等方面深入剖析影响ACP输出优化方案准确性的主要因素。这些因素包括路测(DT)数据采集方法、区域模型的划分和待优化参数初始值及变化范围的设置。用网优实际案例验证我们分析的结果,为下一步优化实践工作提供了方向。     

Deposition characteristics of Ti−Si−N films reactively sputtered from various targets in a N2/Ar gas mixture

The deposition characteristics of Ti−Si−N films obtained by using RF reactive sputtering of various targets in N₂/Ar gas mixtures have been investigated. The dependence of film growth rate and stoichiometry on both the Ti/Si ratio of the target and the N₂ flow rate were found to be due to the different intridation rates of Ti and Si, resulting in, different sputter yields of titanium and silicon nitrides. XPS results showed that an increase in nitrogen content of the Ti−Si−N films leads to the formation of amorphous Si₃N₄ bonding, which produces an in crease in resistivity. Lowering the Si content in the deposited Ti−Si−N films favors the formation of crystalline TiN, even at low N₂ flow rates, and leads to a lower resistivity. A film growth mechanism, expressed in terms of the nitrogen surface coverage on the target, was proposed.     

RF磁控溅射和氨化法制备GaN纳米棒和纳米颗粒

利用射频磁控溅射法分别溅射ZnO中间层和Ga2O3薄膜到Si(111)衬底上,然后ZnO/Ga2O3薄膜在管式石英炉中常压下通氨气进行氨化,高温下ZnO在氨气气氛中被还原生成Zn而升华,而在不同的氨化时间下Ga2O3和氨气反应合成出GaN纳米棒和纳米颗粒。X射线衍射(XRD)测量结果表明,利用该方法制备GaN纳米棒和颗粒具有沿c轴择优取向生长的六方纤锌矿结构。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、傅里叶红外透射谱(FTIR)及选区电子衍射(SAED)观测和分析了样品的形貌、成分和晶格结构。研究分析了此种方法合成GaN纳米结构的反应机制。     

数字调幅中的大小台阶调制

在数字调幅中波广播发射机中,为了提高由调幅波还原音频信号的分辨率,减少音频失真,大都采用了大小台阶调制的工作方式。基于此简要介绍了大小台阶的组成,大小台阶的输出波形以及用＂小台阶＂改善音频指标的原理。     

Label-free detection of rheumatoid factor using YbYxOy electrolyte–insulator–semiconductor devices

In this study, we investigated the effect of yttrium content on the structural properties and sensing characteristics of YbY_xO_y sensing membranes for electrolyte–insulator–semiconductor (EIS) sensors to detect the rheumatoid factor (RF). The YbY_xO_y EIS device prepared at the 60 W plasma condition exhibited a higher sensitivity of 65.77 mV/pH, a lower hysteresis voltage of ∼1 mV, and a smaller drift rate of 0.14 mV/h than did those prepared at the other conditions. We attribute this behavior to the optimal yttrium content in the YbY_xO_y film forming a smooth surface. Furthermore, we used a novel YbTi_xO_y EIS biosensor to measure the RF antigen in human serum because of its rapid and label-free detection. Two different techniques were used for the immobilization of RF antibody onto the surface of an YbTi_xO_y EIS sensor. The RF antibody was directly immobilized on the EIS surface modified with 3-aminopropyltriethoxysilane (APTES) followed by glutaraldehyde (GA). In contrast, a mixture of 1-ethyl-3-(3-dimethylamino-propyl)carbodiimide (EDC) and N-hydroxysuccinimide (NHS) solution was used to functionalize the carboxyl groups at the tail of RF antibodies. RF antibodies functionalized with the active NHS esters were covalently immobilized on the APTES-modified YbTi_xO_y surface. The immobilized RF antibodies on the EIS that are functionalized with the EDC and NHS exhibit higher (41.11 mV/pC_RF) for detection of serum RF antigen in the range 10⁻⁷ to 10⁻³ M, compared to traditional antibody immobilization technique via APTES and GA linkage. The YbTi_xO_y EIS biosensor is a promising analytical tool for RF antigen monitoring due to its good sensitivity, stability and repeatability.     

功率检测器AD8318的特点及应用

介绍了AD8318的性能特点，引脚功能，分析了AD8318内部结构和功能实现，并给出了其在射频信号转换中典型应用电路。     

RF system design and measurement of HIRF-CSRe

An RF system for the CSRe (cooling storage experimental ring) is designed and manufactured domestically. The present paper mainly describes the RF system design in five main sections:ferrite ring, RF cavity, RF generator, low level system and cavity cooling. The cavity is based on a type of coaxial resonator which is shorted at the end with one gap and loaded with domestic ferrite rings. The RF generator is designed in the push-pull mode and the low level control system is based on a DSP+FGPA+DDS+USB interface and has three feedback loops. Finally we give the results of the measurement on our system.     

电极对PZT铁电薄膜的铁电和光学性能的影响

采用射频磁控溅射(RF Magnetron Sputtering)工艺在Si片上分别制备Pt/Ti和LaNiO3 (LNO)底电极,然后在不同的底电极上沉积PbZr0.52Ti0.48O3(PZT)铁电薄膜,在大气环境中对沉积的PZT薄膜进行快速热退火处理(RTA).用X射线衍射(XRD)分析PZT薄膜的相结构和结晶取向,原子力显微镜(AFM)分析薄膜的表面形貌和微结构.再沉积LNO作为顶电极制成"三明治"结构的LNO/PZT/Pt和LNO/PZT/LNO样品,用 RT66A标准铁电测试系统分析样品的电学特性,傅立叶红外光谱仪分别测得样品的反射谱和透射谱.分析了不同电极对PZT铁电薄膜的铁电和光学性能的影响.     

退火温度对ZnO薄膜结构和发光特性的影响

采用反应射频磁控溅射法在 Si(100)基片上制备了高c轴择优取向的ZnO薄膜，研究了退火温度对ZnO薄膜的晶粒尺度、应力状态、成分和发光光谱的影响，探讨了ZnO薄膜的紫外发光光谱和可见发光光谱与薄膜的微观状态之间的关系.研究结果显示,在600—1000℃退火温度范围内，退火对薄膜的织构取向的影响较小，但薄膜的应力状态和成分有比较明显的变化.室温下光致发光光谱分析发现，薄膜的近紫外光谱特征与薄膜的晶粒尺度和缺陷状态之间存在着明显的对应关系；而近紫外光谱随退火温度升高所呈现的整体峰位红移是各激子峰相对比例变 关键词： ZnO薄膜 退火 光致发光 射频反应磁控溅射 可见光发射     

一种100 MHz~12 GHz高功率SPDT射频开关

基于0.13 μm CMOS SOI工艺,设计并实现了一种100 MHz~12 GHz高功率SPDT射频开关。该射频开关为吸收式射频开关,开关支路为串并联的拓扑结构。采用负压偏置设计,减小了插入损耗,提高了隔离度。采用多级开关管堆叠设计,提高了开关的输入1 dB 压缩点。测试结果表明,在100 MHz~12 GHz频率范围内,该射频开关插入损耗小于1.5 dB,隔离度大于31 dB,输入1 dB 压缩点大于40 dBm。芯片尺寸为1.1 mm ×1.1 mm。