射频磁控溅射CNx薄膜的结构与衬底温度关系的研究

使用射频磁控溅射方法在不同衬底温度下（ts=室温，350，500℃）于Si(001)衬底上沉积了CNx膜，并利用拉曼（Raman)光谱、傅里叶变换红外光谱（FTIR）及X射线衍射光电子能谱（XPS）对CNx膜的化学结合状态与温度的关系进行了研究。Raman光谱结果表明，随衬底温度（ts) 增加，D带向低频方向移动，G带向高频方向移动；它们的半高宽分别由375和150cm^-1减小至328和142cm^-1；ID／IG由3．76减小至2.88。FTIR谱中除无序D带（1400cm^-1)和石墨G带（1570cm^-1)外，还有－700cm^-1,～2210cm^-1(C=N),2330cm^-1(C-O)及3255－3351cm^-1(N-H)等峰。XPS测试结果表明：随衬底温度增加，N与C的物质的量比由0.49下降至0.38，sp^2(C-N)组分与sp^3(C-N)组分强度比呈增大趋势。低温（350℃）退火并未对CNx膜的化学结合状态产生较大影响；高温（900℃）退火样品则显示出较好的结晶化程度。     

Fundamental aspect and behavior of saturated fluorocarbons in glow discharge in absence of potential source of hydrogen

The glow discharge of a series of saturated fluorocarbons, C_nF_2n+2 (n = 1, 2, 4, 6, and 8), was studied with glass substrates which do not contain any hydrogen. It was found that the deposition rate was a function of the F/C ratio of the starting fluorocarbons. That is, fluorocarbons with higher F/C ratio, such as CF₄ and C₂F₆, hardly polymerized, while fluorocarbons with lower F/C ratio, such as C₈F₁₈, polymerized as well as C₂F₄. After plasma exposure, the surface of glass substrate was characterized by measurements of water contact angle, water droplet rolling-off angle, and ESCA. Although all saturated fluorocarbon plasmas could alter the surface more hydrophobic than before, the deposited materials from fluorocarbons with higher F/C were not stable. Also, in plasmas with high F/C fluorocarbons, i.e., CF₄ and C₂F₆, sputtering of the electrode material was observed. © 1992 John Wiley & Sons, Inc.     

Electrochromic nickel oxide films made by reactive r.f. sputtering from different targets

We describe the preparation and optical–electrical characterization of thin electrochromic layers based on nickel oxide (NiO_x). These layers were deposited by reactive radiofrequency (r.f.) sputtering from nickel or nickel oxide targets, maintaining the r.f. power and varying the oxygen flow in a gas mixture of Ar and O₂ from 5% up to 30%. The Ni/O ratio in the deposited thin films was determined by Rutherford backscattering spectroscopy (RBS) and the microstructure was investigated by x‐ray diffraction. The deposition rate was found to be strongly dependent on the type of target used. The electrochromic behaviour in aqueous alkaline electrolyte (0.1 N KOH solution) was investigated by electrochemical cyclization. Samples deposited by the NiO target exhibited the lowest N/O ratio (0.5) and the highest value of intercalated charge (～4.9 × 10^?2 mC cm^?2 nm^?1). Among the same samples the highest value of the intercalated charge was found for those deposited at low oxygen flow, but these samples exhibit the smallest reversible changes in optical absorption in the wavelength range 330–1200 nm. Samples deposited by the nickel target do not exhibit significant variations in the value of the exchanged charge; the measured Ni/O ratio indicates a stoichiometry closer to NiO. We also observed the switching behaviour by analysing the films in cyclic time mode at a fixed wavelength. The commutation response time is estimated by measurement under the application of a step waveform potential. Copyright © 2004 John Wiley & Sons, Ltd.     

Difference in Conversions Between Dimethyl Sulfide and Methanethiol in a Cold Plasma Environment

This study compared the conversion of two malodorous substances, dimethyl sulfide (CH₃SCH₃, DMS) and methanethiol (CH₃SH) in a cold plasma reactor. The DMS and CH₃SH were successfully destroyed at room temperature. DMS decomposed less than CH₃SH at the same conditions. In oxygen-free condition, CS₂ and hydrocarbons were the major products, while SO₂ and CO_x were main compounds in oxygen-rich environments. The DMS/Ar plasma yielded more hydrocarbons and less CS₂ than that of CH₃SH/Ar plasma. In the CH₃SH/O₂/Ar plasma, rapid formation of SO and CO resulted in the yields much more amounts of SO₂ and CO₂ than those in the DMS/O₂/Ar plasma; and remained only a trace of total hydrocarbons, CH₂O, CH₃OH, CS₂, and OCS. The major differences between the reaction mechanisms of DMS and CH₃SH were also proposed and discussed.     

Depth profiles of shallow implanted layers by soft ion sputtering and total-reflection X-ray fluorescence

A new method suitable for depth profiling of shallow layers on different materials is presented. It is based on a soft and planar ion sputtering combined with differential weighing, total-reflection X-ray fluorescence (TXRF) spectrometry and Tolansky interferometry. By means of a stepwise repetition of these techniques it is possible to determine both density/depth and concentration/depth profiles. The respective quantities are expressed in terms inherent only to the sample and traceable to the SI-units or subunits gram, nanometer and mole. It is a unique feature of this method that density/depth profiles can directly be obtained from measurements without any calibration or theoretical approximation. The method is applied to a Si wafer implanted with Co ions of 25 keV energy and a nominal dose of 1×10¹⁶ cm⁻². The depth resolution is shown to be <3 nm while a total depth of some 100 nm can be reached. The concentration/depth profile is compared with RBS measurements, wet-chemical etching plus TXRF and Monte Carlo simulations. In view of the fact that only similar but not exactly the same samples have been examined by these methods, a good correspondence can be noticed.     

Modeling of an inductively coupled plasma at reduced pressures

Plasma sintering experiments in this laboratory at reduced pressures revealed efficient heating of the ceramic sample due to recombination of dissociated and/or ionized species on the surface. For establishing a model for this plasma sintering process, it is necessary to first consider the plasma itself. Therefore, a suitable model for an RF inductively coupled plasma has been developed considering reduced pressures. As the pressure decreases, the electron density also decreases at a fixed electron temperature, causing substantial deviations from chemical equilibrium. Due to the poor collisional coupling between electrons and heavy particles at reduced pressures, large deviations from kinetic equilibrium have also to be expected. The model is based on a rotationally symmetric plasma contained in a quartz tube. The power level ranges from 1.5 to 3 kW and the operating pressure is varied from 1 to 0.01 atm. Both deviations from chemical and kinetic equilibrium are included in this model. Thermodynamic and transport properties for two-temperature plasmas are used for this modeling work. The results indicate that for pressures below 0.1 atm, there is a strong ambipolar flux of charge carriers to the confining walls, leading to significant variations of the temperature across the tube. The electron temperature increases rapidly as the pressure decreases, whereas the heavy-particle temperature decreases.     

Microstructural and physicochemical study of the buried Fe/AlGaAs(100) interface by transmission electron microscopy and x‐ray emission spectroscopy

Among the magnetic metal/semiconductor contacts, the Fe/GaAs system has been widely studied owing to its potential applications in electronic devices. In contrast, there are not many studies concerning the Fe/Al_xGa_1?xAs contact, and in particular there are no reports concerning the changes induced in the interfacial zone by the presence of Al. In this work, thin polycrystalline iron films were deposited by ion beam sputtering at room temperature on a 300 nm thick Al_0.25Ga_0.75As layer grown by molecular beam epitaxy onto GaAs(001). X‐ray diffraction analysis showed that the iron films are polycrystalline, and indications of a (002) texture of the film were observed. The fine scale analysis of the interface was achieved by high‐resolution transmission electron microscopy (HRTEM) observations, the results of which are compared with the physicochemical information obtained from electron‐induced x‐ray emission spectroscopy, by analysing the Al 3p valence states at the Fe/Al_xGa_1?xAs interface. The HRTEM experiments on cross‐section samples indicate that the interfacial zone between iron and AlGaAs is limited to <1.5 nm in thickness. X‐ray emission spectroscopy showed the presence of Al atoms in an FeAl‐like environment at the interface, and the existence of wrong bonds and point defects. The estimated width of the perturbed interface (2.0 ± 0.5 nm) is in agreement with the HRTEM results. Copyright © 2003 John Wiley & Sons, Ltd.     

AT88RF020型射频识别卡及其应用

AT88RF020是13.56MHz的低端射频识别卡,遵循ISO/IEC 14443 Type B协议.着重介绍AT88RF020型射频卡的特点、工作原理及其在学校就餐管理中的应用,同时给出部分程序代码.     

射频CMOS平面螺旋电感2-π等效电路模型参数的提取

从有理分式拟合方法出发,提出了用于射频CMOS平面螺旋电感2-π等效电路模型参数提取的新方法.通过比较提参后等效电路给出的S参数和实验测量的S参数,证明该方法的精度很高.此外,提参的策略非常直接,因此容易在CAD里面编程实现.提参得到的等效电路模型对于射频电路设计者来说也是非常有用的.     

用磁控溅射和退火方法制备AlSb多晶薄膜

采用磁控溅射法在玻璃衬底上制备Al/Sb预制多层薄膜,然后将Al/Sb预制多层薄膜在退火炉中退火得到AlSb多晶薄膜.用X射线衍射(XRD)法测薄膜结构;用扫描电镜(SEM)测薄膜Al/Sb成分比,结果表明AlSb多晶薄膜具有单一的晶相、均匀的结构,以及粒径大约20nm的晶粒.根据电导率(lnσ)与温度(T)的关系得到电导激活能为0.21和0.321eV,为制备出适用于太阳电池的AlSb多晶薄膜奠定了一定的技术基础.