基于LiCo0.8M0.2O2 (M=Ni,Zr)薄膜的全固态薄膜锂电池

用射频磁控溅射结合传统退火的方法制备LiCo0.8M0.2O2 (M=Ni,Zr)阴极薄膜．X射线衍射、拉曼光谱、扫描电子显微镜等手段表征了不同掺杂的LiCo0.8M0.2O2薄膜．结果显示,700℃退火的LiCo0.8M0．2O2薄膜具有类似α-NaFeO2的层状结构．通过对不同掺杂锂钴氧阴极的全固态薄膜锂电池Li／LiPON／LiCo0.8M0.2O2的电化学性能研究表明,电化学活性元素Ni的掺杂使全固态电池具有更大的放电容量(56μAh／cm2μm),而非电化学活性元素Zr的掺杂使全固态电池具有更好的循环稳定性．     

退火温度对低温生长MgxZn1－xO薄膜光学性质的影响

用射频磁控溅射法在80℃衬底温度下制备出Mg_xZn_1-xO(x=0.16)薄膜，用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对Mg_xZn_1-xO薄膜结构和光学性质的影响.测量结果显示，Mg_xZn_1-xO薄膜为单相六角纤锌矿结构，并且具有沿c轴的择优取向；随着退火温度的升高，(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大，(002)XRD峰半高宽(F 关键词： xZn_1-xO薄膜')" href="#">Mg_xZn_1-xO薄膜 射频磁控溅射 退火     

Fabrication and characterization of sputtered titanium dioxide films

TiO₂ thin films were prepared under various conditions by using a reactive RF sputtering technique. The structural, optical and electrical characteristics of the films have been investigated. All as-deposited films were amorphous. After annealing at T > 673 K, the crystallinity of the observed tetragonal anatase phase appeared improved. The optical band gap, determined by using Tauc plot, has been found to amount to 3.38 ± 0.03 and 3.21 ± 0.03 eV for the direct and indirect transition, respectively. Also the complex optical constants for the wavelength range 300-2500 nm are reported. Using the two-point probe technique, the dark resistivity has been measured as a function of the film thickness, d. The resistivity, ρ, of the samples has been found to decrease markedly with increasing thickness, but only for d < 100 nm. The behaviour of ρd versus d was found to fit properly with the Fuchs and Sondheimer relation with parameters ρ_o = 4.95 × 10⁶ Ω cm and mean free path, l = 310 ± 2 nm. The log ρ versus 1/T curves show three distinct regions with values for the activation energy of 0.03 ± 0.01, 0.17 ± 0.01 and 0.50 ± 0.02 eV, respectively.     

Au/SiO2纳米多层薄膜的制备及其性质表征

利用多靶磁控溅射技术制备了Au/SiO₂纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO₂的沉积时间及SiO₂的沉积时间一定而改变薄膜厚度时，多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明：具有纳米层状结构的Au/SiO₂多层薄膜在560 nm波长附近有明显的表面等离子共振吸收峰，吸收峰的强度随Au颗粒的浓度增加而增强，在Au颗粒浓度相同的情况下，复合薄膜 关键词： 2纳米复合薄膜')" href="#">Au/SiO₂纳米复合薄膜 多靶磁控溅射 吸收光谱 有效介质理论     

射频MEMS压控电容器

研究了射频 MEMS压控电容器的设计和制造工艺。压控电容器的制作采用了 MEMS制造技术 ,其主要结构为硅衬底上制作金属传输线电极和介质层 ,然后制作金属膜桥作为电容器的另一个电极。通过改变加在金属膜桥与传输线间的电压达到改变电容值的目的。这种压控电容器可以工作于射频和微波波段 ,具有很高的Q值。测试结果如下 :在 1 GHz、0 V时 Q值达到 3 0 0 ,0偏压电容值为 0 .2 1 p F,当加上驱动电压后 Cmax/ Cmin的变比约为 4∶ 1     

等离子体横向刻蚀硅的特性研究

研究了用SiO2 +Al作掩模 ,SF6 +O2 混合气体等离子体对Si的横向刻蚀 ,其结果表明 ,在SF6 +O2 等离子体气氛中 ,Al是很好的保护膜 ,可以在待悬浮器件下形成大的开孔。因此 ,预计用这种技术 ,可以在Si片上集成横向尺寸为数百微米 ,具有优良高频性能的MEMSRF/MW无源器件 ,如开关、传输线、电感和电容等。     

一种改进的射频加解扰方法

文中提出了一种改进的射频加解扰新方法，采用视频加扰与射频解扰相结合的技术，利用（Ｎ＋１）个电视射频频道实现对Ｎ路电视信号的加扰。     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.     

国内外中短波调幅广播技术20年来的回顾和展望

文章回顾２０年来国内外调幅广播在调制制式，射频放大系统以及包括单边带，浮动载波和调幅多工等多种功能的发展状况。同时对今后调幅广播技术发展方向发表了几点看法。     

RF电路瞬态包络分析算法研究

瞬态包络分析算法是一种快速有效的仿真算法，被广泛应用于RF电路仿真中，文章主要研究了基于打靶法的瞬态包络分析算法－采样包络算法，并给出了该算法的具体流程和计算机实现结果。