射频磁控溅射法在柔性聚酰亚胺衬底上制备ZnS薄膜及其特性研究

为使Ⅱ-Ⅵ族化合物ZnS薄膜具有可弯曲性,选用柔性的聚酰亚胺作为衬底材料,用射频磁控溅射法沉积ZnS薄膜,对所制备薄膜的结晶结构、组分和光学特性进行分析.实验结果表明,所制备薄膜为结晶态的闪锌矿ZnS结构,择优取向为(111)晶面,晶粒尺寸为25.6 nm.薄膜组分接近化学计量比,并具有少量的S损失.薄膜在可见光区和近红外光区的平均透射率分别为82.0％和90.5％,透光特性良好.作为对比,在钠钙玻璃衬底上溅射的ZnS薄膜的结晶度高于聚酰亚胺衬底薄膜,但其透射率略低于柔性ZnS薄膜.实验结果表明了用磁控溅射法在柔性聚酰亚胺衬底上制备ZnS薄膜的可行性.     

一种提高射频电缆焊接质量的工艺方法

射频连接器与射频电缆被广泛应用于军民品的通信设备中,其关键工序射频电缆芯线与射频连接器插针的连接常采用手钳式阻焊工具。由于射频电缆较细,手钳式阻焊工具在阻焊操作时,要求电装工双手不能抖动,否则易产生废品。通过对手钳式阻焊工具进行技术改进,重新设计了一种预压紧方式的阻焊装置,并通过试验确定了电阻焊接头的结构形式和尺寸,提高了手工阻焊成品率和生产效率,降低了对电装工的技能要求。     

Annealing of silver nanolayers sputtered on polytetrafluoroethylene

Silver nanolayers sputtered on polytetrafluoroethylene and their changes induced by post‐deposition annealing at 100–300 °C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy and by measurement of electrical sheet resistance by two‐point technique. Chemical composition was determined by X‐ray photoelectron spectroscopy (XPS) and electrokinetic analysis in dependence on the gold layer thickness. The annealing at 300 °C leads to significant rearrangement of the silver layer, and the transition threshold increases to 35 nm. The presence of oxidized structures on silver‐coated samples is observed in XPS spectra and by electrokinetic analysis, too. Annealing of pristine and silver‐coated poly(tetrafluoroethylene) at 300 °C results in significant change of the sample surface morphology and chemistry. There is observed formation of isolated silver islands on the surface, which could be connected with silver melting. Later, the silver agglomeration takes place. Copyright © 2013 John Wiley & Sons, Ltd.     

Influence of oxygen flow rate on the surface chemistry and morphology of radio frequency (RF) magnetron sputtered zinc oxide thin films

Zinc oxide thin films were deposited, by radio frequency magnetron sputtering, on heated and unheated substrates. The oxygen flow rate was varied during deposition, and its effects on the structural and chemical properties of the films were investigated. The films had oriented c‐axis growth with nano‐crystallite size. Their surfaces manifested columnar microstructure, with a surface roughness that was suppressed by the introduction of oxygen. Chemical analysis showed that deposition under an oxygen atmosphere resulted in substantial reduction of oxygen vacancies, with a corresponding incorporation of chemisorbed species. Copyright © 2013 John Wiley & Sons, Ltd.     

Effect of TaNx on electrical and optical properties of annealed TaNx/Ag/TaNx films

As‐deposited Ag(10 nm)/glass films exhibited agglomerated nanocrystals with seemingly thick boundaries. Introduction of a TaN_x layer below the Ag films resulted in dense and smooth structures, with a resistance at least three times lower than that of Ag/glass. For TaN_x(10 nm)/Ag(10 nm)/TaN_x(10 nm)/glass multilayer films, Auger electron spectroscopy results indicate that TaN_x acts as an effective barrier restraining the diffusion of Ag. After annealing (up to 573 K), no outward diffusion of Ag through either TaN_x layer was seen. However, partial oxidation of the outermost TaN_x layer to form Ta₂O₅ was observed. The films showed promising optical properties with 73% transmittance in the visible region and ~15% average transmittance in the near‐infrared region. The optical data obtained here was in good agreement with simulated predictions. Copyright © 2013 John Wiley & Sons, Ltd.     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Interpretation of TOF-SIMS data based on information entropy of spectra

Time-of-flight secondary ion mass spectrometry (TOF-SIMS), when used for the analysis of complex material samples, typically provides data that are complicated and challenging to understand. Therefore, additional data analysis techniques, such as multivariate analysis, are often required to facilitate the interpretation of TOF-SIMS data. In this study, a new method based on the information entropy (Shannon entropy) is proposed as an indicator of the outline characteristics of an unknown sample, such as changes in the material within the sample and mixing conditions. The Shannon entropy values are calculated using the relative intensity of every secondary ion normalized to the total ion count and reflect the diversity of secondary ions in the spectrum. Mixed samples containing two organic electroluminescence materials of different ratios, multilayers of Irganox 1010, and other organic materials were employed to evaluate the utility of Shannon entropy in the analysis of TOF-SIMS data. The findings demonstrate that the Shannon entropy of a spectrum indicates differences in materials and changes in the conditions of a material in a sample without the need for peak identification or the knowledge of specific peaks corresponding to the materials in the sample.     

V掺杂ZnO透明导电薄膜研究

本文分别采用磁控溅射技术与基于密度泛函理论的平面波赝势方法两种方式, 对高价态差元素V掺杂ZnO薄膜进行研究. 实验研究结果表明: V的掺入并未改变ZnO的生长方式, 所制备的薄膜都呈(002)择优生长; 随着衬底温度增加, VZO薄膜的结晶质量逐步改善, 当衬底温度超过280 ℃时薄膜的结晶质量恶化; 在280 ℃时获得的VZO薄膜电阻率最低3.8×10^-3 Ω·m, 500-2000 nm平均透过率高于85%. 理论模拟结果表明: V以替位形式掺入ZnO六角纤锌矿晶格结构中, 费米能级进入导带, 材料表现出n 型半导体的特性, 导电电子主要由V 3d及O 2p电子轨道提供. 理论计算结果与实验结果的一致性, 表明VZO薄膜具有作为高效Si基薄膜太阳电池透明导电薄膜的应用潜力.     

Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

A VO₂ thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO₂ (FTO) conductive glass substrate. The FTO/VO₂/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO₂/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO₂/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.     

Thickness effect on the band gap of magnetron sputtered Pb45Se45O10 thin films on Si

Oxygen doped PbSe thin films with different thickness were grown on the Si (100) substrates by magnetron sputtering, and characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and physical properties measurement system. As the film thickness increased, the intensity of the (200) PbSe prominent diffraction peak increased, while the (220) peak almost vanished, indicating the primary growth direction. The change rate between the light and dark resistance increased with the film thickness, and the maximum of 64.76% was obtained. According to the density functional theory calculations and the experimental results, the band gap of the PbSe thin films decreased from 0.278 eV to 0.21 eV when doped with oxygen. Doping with oxygen during the deposition process is a viable way to prepare PbSe thin films with a tunable band gap. The band gap increased almost linearly with the lattice constant, confirmed by the calculated and experimental results.