ZigBee室内定位设备的天线与射频接口电路设计

针对ZigBee室内定位设备对电磁场高效产生和准确测量的要求,分析了室内定位设备中天线与射频接口电路设计的基本需求,给出了一种倒F型1/4波长单极子PCB板上天线及相应射频接口的分析设计方法。通过电磁场仿真软件AnsoftHFSS及射频电路仿真分析软件ADS2011对天线进行仿真,得到天线的关键参数仿真结果。在实际应用系统中的测试结果证明,天线及其射频接口能够较好地支持定位设备与定位算法的工作,且满足定位节点设备对体积与成本方面的要求。     

基于RF MEMS开关的新型双频带功率放大器

RF MEMS开关具有低损耗、低功耗、尺寸小和易于集成等优点而被广泛应用于各种可重构射频电路及系统中。通过分析比较电容并联式和串联式RF MEMS开关两种电路结构的射频性能,设计了一种基于RF MEMS开关的新型功率放大器,使用RF MEMS开关控制匹配网络来实现双工作频带的转换。结果表明,设计的功率放大器在2.35GHz和1.25GHz两个工作频带下,功率附加效率(PAE)和输出功率(Pout)可分别达到72%、67%及40.8、42.7dBm。该功率放大器具有较高的功率附加效率和输出功率,适用于多频带的射频系统,对RF MEMS器件在可重构系统中的应用具有一定参考价值。     

与Na(4d)—Na(4f)碰撞能量转移相关联的两步混合激发四波混频

运用与Na_2(A~1∑~+)和Na(4d)相联属的等频两步混合共振四波混频过程,产生了在322.2nm—325.2nm区内可调谐的紫外相干辐射。实验同时表明,该可调谐相干辐射的强度与钠原子4d→4f碰撞能量转移过程密切有关。     

CMOS射频集成电路ESD保护的挑战

随着集成电路(IC)T艺进入深亚微米水平,以及射频(Radi0.Frequency,RF)IC工作频率向数千兆赫兹频段迈进,片上防静电泄放(ESD)保护设计越来越成为RF IC设计的挑战.产生这一挑战的关键原因在于ESD保护电路和被保护的RF IC核电路之间存在着不可避免的复杂交互影响效应.本文讨论了RF ESD保护的研究和设计领域的最新动态,总结了所出现的新挑战、新的设计方法和最新的RF ESD保护解决方案.     

北斗导航接收机LNA的设计与仿真

为了实现北斗卫星导航接收机射频前端的研制,根据接收机射频模块系统指标要求,包括增益、噪声系数、灵敏度等关键指标要求,提出一种基于ATF54143的LNA设计方案,采用两级结构,源极传输线负反馈稳定技术,实现输入最佳噪声匹配,输出共轭匹配设计,并用ADS软件进行仿真,得到增益32dB,噪声系数0.45dB,输入驻波比1.5。     

雷达信号特征隐身技术及其性能分析

现代电子战中,雷达等射频辐射系统的信号隐身比飞机等的实体隐身更为重要.文中针对雷达的信号隐身问题,提出了一种基于脉内复合调制的雷达信号特征隐身技术,详细分析了4种脉内单一调制与不同类型复合调制的雷达信号特征隐身性能.仿真结果表明,基于脉内复合调制的雷达信号比单一调制的雷达信号特征隐身能力更强.     

c轴择优取向ZnO薄膜RF溅射工艺研究

通过射频磁控溅射在Si(100)基片上制备了ZnO薄膜,该文着重研究了磁控溅射中各生长参数如衬底温度、氧分压及后处理工艺等因素对氧化锌薄膜结晶性能、表面形貌、择优取向与微结构的影响,并对溅射工艺与取向、结构的关系进行了分析比较,从而确定了最佳溅射及后处理条件并获得了c轴择优取向的ZnO薄膜。     

射频脉冲CO2激光轧辊毛化技术及工艺实验研究

利用射频激励CO2激光器开发的轧辊毛化设备具有激光脉冲调制简单、结构紧凑、运行和维护费用低等优点.通过实验研究和讨论了射频CO2激光毛化中各种工艺参数的影响.在选取合适的辅助气体作用方式、压力和离焦量的情况下,实际测量结果表明激光重复频率、脉冲宽度、加工速度对毛化点大小和几何形状的影响最直接.     

An Inductorless 300 MHz Wideband CMOS Power Amplifier

The power amplifier tends to be one of the most demanding parts to fully integrate when building an entire radio on a CMOS chip. In this paper the design of a fully integrated RF power amplifier without inductors is described. As inductors in CMOS technology are associated with various problems, it is interesting to examine what performance can be achieved without them. An amplifier with an operating band from 60 MHz to 300 MHz (–3 dB) is built in 0.8 m CMOS. A 3 V supply is used. The measured midband power gain is 30 dB with 50 resistive source and load impedance. As linearity is important for many modern modulation schemes, the amplifier is designed to be as linear as possible. The measured third order intercept point is 23 dBm and the 1 dB compression point is 10 dBm, both referred to the output. The output is single ended to avoid an off-chip differential to single ended transformer.     

Study on Characteristics of Various RF Transmission Line Structures on PES Substrate for Application to Flexible MMIC

In this work, the coplanar waveguide is fabricated on a PES (poly[ether sulfone]) substrate for application to a flexible monolithic microwave integrated circuit, and its RF characteristics were thoroughly investigated. The quality factor of the coplanar waveguide on PES is 40.3 at a resonance frequency of 46.7 GHz. A fishbone‐type transmission line (FTTL) structure is also fabricated on the PES substrate, and its RF characteristics are investigated. The wavelength of the FTTL on PES is 5.11 mm at 20 GHz, which is 55% of the conventional coplanar waveguide on PES. Using the FTTL, an impedance transformer is fabricated on PES. The size of the impedance transformer is 0.318 mm × 0.318 mm, which is 69.2% of the size of the transformer fabricated by the conventional coplanar waveguide on PES. The impedance transformer showed return loss values better than –12.9 dB from 5 GHz to 50 GHz and an insertion loss better than –1.13 dB in the same frequency range.