Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure

针对抗电磁干扰的需要提出了一种由SiCGe/3C-SiC异质结构成的光控达林顿晶体管设计.用多维器件模拟软件ISE对这种新型功率开关进行了特性仿真.结果表明,与采用其他结晶类型的碳化硅衬底相比,SiCGe与3C-SiC间较小的晶格失配有利于提高器件性能,可使其最大共射极电流增益达到890,获得最好的光触发特性和较好的Ⅰ-Ⅴ特性,饱和压降大约为4V.     

Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs

研究了薄基区HBT合金温度对残余电压Voffset和欧姆接触电阻Rcontact的影响,给出了薄基区HBT的最佳合金温度区域.用肖特基钳位理论解释了合金温度过高导致Voffset偏大的现象.从晶体管基本物理机制推导出Voffset与集电极、发射极面积比Ac/Ae的关系,并用此解释了U形发射极HBT具有较小Ac/Ae的原因,进一步证明了U型发射极结构的优越性.     

A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10⁻⁵ mA/cm² and high ON/OFF current ratio as high as 10⁵.     

Improvement of n-type OTFT electrical stability by gold electrode modification

N-type organic thin film transistors (OTFT) containing modified gold electrodes have been fabricated to investigate the influence of the self assembled monolayer on the transistor characteristics. We report on the effect of drain/source modification by thiol derivatives on the performances, electrical parameters uniformity and electrical stability of C₆₀ transistors. In the literature, electrical instability is often attributed to organic semiconductor (OSC), OSC-insulator interface and insulator. We found here that OSC-metal interfaces affect dramatically the operational stability for bottom gate/bottom contact structure. These effects have been attributed to morphological evolution at the interface metal-OSC induced by the self-assembled monolayers.     

Water-gated phthalocyanine transistors: Operation and transduction of the peptide–enzyme interaction

The use of aqueous solutions as the gate medium is an attractive strategy to obtain high charge carrier density (10¹² cm⁻²) and low operational voltages (<1 V) in organic transistors. Additionally, it provides a simple and favorable architecture to couple both ionic and electronic domains in a single device, which is crucial for the development of novel technologies in bioelectronics. Here, we demonstrate the operation of transistors containing copper phthalocyanine (CuPc) thin-films gated with water and discuss the charge dynamics at the CuPc/water interface. Without the need for complex multilayer patterning, or the use of surface treatments, water-gated CuPc transistors exhibited low threshold (100 ± 20 mV) and working voltages (<1 V) compared to conventional CuPc transistors, along with similar charge carrier mobilities (1.2 ± 0.2) x 10⁻³ cm² V⁻¹ s⁻¹. Several device characteristics such as moderate switching speeds and hysteresis, associated with high capacitances at low frequencies upon bias application (3.4–12 μF cm⁻²), indicate the occurrence of interfacial ion doping. Finally, water-gated CuPc OTFTs were employed in the transduction of the biospecific interaction between tripeptide reduced glutathione (GSH) and glutathione S-transferase (GST) enzyme, taking advantage of the device sensitivity and multiparametricity.     

Zirconium oxide dielectric layer grown by a surface sol–gel method for low-voltage,hysteresis-free,and high-mobility polymer field effect transistors

A simple, facile surface sol–gel method is introduced for the fabrication of zirconium oxide films for use as a dielectric layer of a solution-processed polymer field effect transistor (PFET). High dielectric strength is demonstrated for a zirconium oxide layer under room-temperature fabrication conditions using a surface sol–gel method without any post-treatments, which are typically needed in general sol–gel methods. X-ray photoemission spectroscopy showed that the fabricated zirconium oxide layer consists of inorganic ZrO₂ and organic alkoxide groups, which can explain its marginal dielectric constant (∼9) and continuous film properties. In addition, by finishing the surface sol–gel synthesis at the stage of chemisorption, the hydrophobic nature of the final surface was retained, leading to a trap-free semiconductor/dielectric interface. As a result, the PFET made with a conventional polymeric semiconductor rendered nearly hysteresis-free and high mobility (0.3 cm²/V) characteristics at low voltage (<2 V).     

Temperature dependence of transfer characteristics of OTFT memory based on DNA-CTMA gate dielectric

A nonvolatile memory based on an organic thin-film transistor (OTFT) with a biopolymer of DNA-cetyltrimethylammonium chloride (DNA-CTMA) acting as the gate dielectric layer was fabricated. The transfer characteristics of the device prepared by both DNA alone and DNA-CTMA showed a very large and stable hysteresis. In order to analyze the memory mechanism, the temperature dependence of the transfer characteristics, electric conductivity, differential scanning calorimetry (DSC), thermally stimulated depolarization current (TSDC) as well as the dielectric property of the DNA-CTMA film have been investigated. As a result, the quasi-ferroelectric polarization originating from the alignment of the intrinsic dipole moment inside the DNA-CTMA complex was identified as the main source of hysteresis in the lower temperature region.     

Ultrafast Delamination of Graphite into High-Quality Graphene Using Alternating Currents

To bridge the gap between laboratory-scale studies and commercial applications, mass production of high quality graphene is essential. A scalable exfoliation strategy towards the production of graphene sheets is presented that has excellent yield (ca. 75 %, 1–3 layers), low defect density (a C/O ratio of 21.2), great solution-processability, and outstanding electronic properties (a hole mobility of 430 cm² V⁻¹ s⁻¹). By applying alternating currents, dual exfoliation at both graphite electrodes enables a high production rate exceeding 20 g h⁻¹ in laboratory tests. As a cathode material for lithium storage, graphene-wrapped LiFePO₄ particles deliver a high capacity of 167 mAh g⁻¹ at 1 C rate after 500 cycles.