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21.
红外焦平面成像器件发展现状 总被引:17,自引:14,他引:17
红外焦平面列阵成像技术已经进入了成熟期。本文对几种红外焦平面列阵器件如MCT、InSb和QWIP的最新进展作一评述,简要介绍其器件发展水平、技术路线和关键工艺。简要提及一种新颖的非制冷焦平面成像技术:光学读出微光机红外接收器。 相似文献
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This work focuses on the quantum mechanical evaluation of two components of the dark current in quantum well infrared photodetectors (QWIPs)––field induced emission (FIE) and thermionic emission (TE). The negligible value of the third component of the dark current––sequential tunnelling (ST)––was shown theoretically in previously published work. Calculations are on devices that cover the long wavelength- to very long wavelength-infrared (LWIR to VLWIR) region of the spectrum. The results prove theoretically for the first time various experimentally observed characteristics of these two emission components of the dark current. 相似文献
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Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p–i–n polarity are reported. The dark current density (J–V) characteristics, the temperature dependence of zero-bias resistance area product (R0A), the dynamic resistance as well as bias dependent dynamic resistance (Rd) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55 μm wavelength required for photodetection in optical communication. Quantum efficiency of ∼95%, responsivity ∼0.6 A/W and D* ∼ 5.7 × 1010 cm Hz1/2/W have been achieved at 300 K in X BeTe conduction band minimum. 相似文献
24.
Eric Costard P. Bois Alfredo De Rossi A. Nedelcu Olivier Cocle Franois-Hugues Gauthier Francis Audier 《Comptes Rendus Physique》2003,4(10):1089-1102
Standard GaAs/AlGaAs QWIPs (Quantum Well Infrared Photodetector) are now well established for long wave infrared (LWIR) detection. The main advantage of this technology is the duality with the technology of commercial GaAs devices. The realization of large FPAs (up to 640×480) drawing on the standard III–V technological process has already been demonstrated. The second advantage widely claimed for QWIPs is the so-called band-gap engineering, allowing the custom design of the quantum structure to fulfill the requirements of specific applications such as multispectral detection. QWIP technology has been growing up over the last ten years and now reaches an undeniable level of maturity. As with all quantum detectors, the thermal current, particularly in the LWIR range, limits the operating temperature of QWIPs. It is very crucial to achieve an operating temperature as high as possible and at least above 77 K in order to reduce volume and power consumption and to improve the reliability of the detection module. This thermal current offset has three detrimental effects: noise increase, storage capacitor saturation and high sensitivity of FPAs to fluctuations in operating temperature. For LWIR FPAs, large cryocoolers are required, which means volume and power consumption unsuitable for handheld systems. The understanding of detection mechanisms has led us to design and realize high performance ‘standard’ QWIPs working near 77 K. Furthermore, a new in situ skimmed architecture accommodating this offset has already been demonstrated. In this paper we summarize the contribution of THALES Research & Technology to this progress. We present the current status of QWIPs in France, including the latest performances achieved with both standard and skimmed architectures. We illustrate the potential of our QWIPs through features of Thales Optronique's products for third thermal imager generation. To cite this article: E. Costard et al., C. R. Physique 4 (2003). 相似文献
25.
We report on the development and testing of a new dual-band infrared focal plane array (FPA) specifically designed to detect buried land mines. The detector response spectra were tailored to take advantage of the sharp spectral features associated with disturbed soils. The goal was to have a “blue” channel with peak response near 9.2 μm and a “red” channel with maximum response at 10.5 μm. The quantum well infrared photodetector is particularly suited for this application because of the flexibility available in designing the peak wavelength of the detector and the relatively narrow width of the response spectrum. FPAs were produced and tested under the US Army Research Laboratory’s Advanced Sensors Collaborative Research Alliance in co-operation with the Night Vision and Electronic Sensors Directorate. We report on laboratory measurements of the response spectra, the dark current as a function of operating temperature, and the conversion efficiency in both the blue and red channels. Imagery was taken in the field of buried anti-tank mines. The images were analyzed by combining the data from the two channels into single fused images. 相似文献
26.
We studied p-type GaAs/AIGaAs multiple quantum well (MQW) materials as a possible alternative to the current n-type GaAs/AIGaAs
MQWs for infrared detection. The advantage of p-type MQWs is that absorption of infrared radiation at normal incidence is
not selection rule forbidden as it is for the n-type. We have verified that significant photoresponse occurs at normal incidence
in p-type MQWs. We studied changes in the photoresponse spectrum as a function of well width and temperature. The MQW heterostructures
were designed to use bound to continuum intersubband absorption in the GaAs valence band and to have a peak photoresponse
near 8 μm. The photoresponse spectrum was compared to the first theoretical model of the bound to continuum absorption in
p-type GaAs/ AlGaAs MQWs. The theoretical absorption curve was found to be in good qualitative agreement with the experimental
results. 相似文献
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D.Z.-Y. Ting Y.-C. Chang S.V. Bandara C.J. Hill S.D. Gunapala 《Infrared Physics & Technology》2007,50(2-3):136-141
We examined theoretically band structure and discrete dopant effects in the quantum well infrared photodetector (QWIP) and the quantum dot infrared photodetector (QDIP). We find that in QWIPs discrete dopant effects can induce long wavelength infrared absorption through impurity assisted intra-subband optical transitions. In QDIPs, we find that a strategically placed dopant atom in a quantum dot can easily destroy the symmetry and modify the selection rule. This mechanism could be partially responsible for normal incidence absorption observed in low-aspect-ratio quantum dots. 相似文献