显像管调制特性的测量与分析

测试了显象管调制特性曲线，并分析了特性曲线与显像管工作原理．     

C D : a computer program to generate 1D, 2D and 3D grids of functions dependent on the molecular ab initio electron density

A program to compute many functions dependent on the electron density ρ(r) from the results of ab initio molecular calculations is presented. The program allows the generation of different one-, two-, and three-dimensional grids for further graphical representation or numerical analysis. Other options like extracting separate atom contributions to the function computed or locating maximum and minimum values are also implemented. A number of illustrative applications regarding different ρ(r)-dependent functions are presented and the performance and portability of the program is discussed.     

浅谈开关电源中的平面变压器

与传统变压器相比较,使用平面变压器可以提高开关电源的功率密度,减小开关电源中磁性元件的体积。因此,近年来平面变压器被广泛地研究。文章介绍了平面变压器的结构,将平面变压器与传统变压器进行比较,分析综述了平面变压器在当今开关电源发展应用的优势和前景,并进一步说明了平面变压器中绕组间距选择,绕组交叉技术及PCB绕组设计等要点。     

C_nP_4~4(n=1～7)团簇结构与能量的密度泛函研究

使用分子图形软件设计出多种CnP-4(n =1～ 7)的结构模型 ,并进行B3LYP密度泛函几何构型优化和振动频率计算 .最稳定的CP-4和C2 P-3 都是平面环状结构 .最稳定的CnP-4(n =3 ,5 ,7)结构在直碳链的一端连接 1个磷原子且另一端是P3 C的四元环的平面结构 .最稳定的CnP-4(n =4,6)结构在直碳链的一端连接 1个磷原子且另一端是P3 的三元环的锄状结构 .直碳链可与平面环的磷原子生成大π键 .大多数构型是由C2 ,C3 ,C4子结构以环状或链状方式组成的 .碳原子与磷原子以交替方式排列的结构数量少、能量高 .     

压电陶瓷压电特性的激光调制法测量研究

介绍可测量压电陶瓷压电特性的激光干涉调制测量方法.采用相干检测原理对信号进行提取,不仅可以抑制噪声对干涉信号的影响,而且还可以大大降低光电探测器和电路的1/f噪声.与通常干涉仪测量方法相比,这种方法具有测量灵敏度高等优点.利用该方法对压电陶瓷压电特性进行了测量,讨论了激励电压信号的频率、幅度对压电陶瓷压电常数d₃₁的影响,并对其压电迟滞曲线进行了测量.     

Optimally Dense Packings of Hyperbolic Space

In previous work, a probabilistic approach to controlling difficulties of density in hyperbolic space led to a workable notion of optimal density for packings of bodies. In this paper we extend an ergodic theorem of Nevo to provide an appropriate definition of those packings to be considered optimally dense. Examples are given to illustrate various aspects of the density problem, in particular the shift in emphasis from the analysis of individual packings to spaces of packings.     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb2 75C6 0 薄膜的价带电子态密度分布 .相纯Yb2 75C6 0 样品通过C1s芯态x射线电子谱峰的位移表征 .结果表明Yb2 75C6 0 是半导体 ,在费米能级处几乎没有电子态分布 .Yb 6s电子态和C6 0 LU MO能带的杂化效应不可忽略 ,有部分Yb 6s电子分布在Yb C6 0 杂化能带上 .     

Shifting the Superparamagnetic Limit of Nanosized Copper Iron Spinel

In this paper we analyze trend of EFG values measured at Cd impurity in a group of semiconducting delafossites with chemical formula CuBO₂ (B = Al, Fe, Cr, Nd). We conclude that this trend reveals one of the most subtle details in electronic spectrum of the compounds: if impurity states are formed within or out of the band gap. In CuAlO₂ and CuFeO₂ the Cd EFG exhibits larger value than in CuCrO₂ and CuNdO₂, when Cd substitutes the Cu atom. This occurs because in the first two compounds the Cd forms shallow band within the gap, and in the second two compounds does not. When Cd occupies the B position it exhibits almost the same EFG in all delafossites. In this case, Cd does not form its states within the gap in none of the compounds. To arrive to these conclusions we analyzed and calculated various systems (Cd-doped CuAlO₂ and CuCrO₂ compounds, fictitious molecules), using the FP-LAPW method.