退火对ZnO薄膜结构及缺陷的影响

采用射频反应磁控溅射法在Si(111)基片上制备了高度c轴择优取向的ZnO薄膜,采用X线衍射(XRD)、X线光电子能谱(XPS)分析方法研究了退火对ZnO薄膜结构及缺陷的影响.结果表明,随着退火温度的上升,薄膜的择优取向及取向一致性更好,晶化程度增高,晶粒尺寸变大.退火使更多的Zn间隙原子回到晶格位置,并弥补薄膜中氧的...     

基于模拟退火遗传算法的波束图设计

针对传统的标准遗传算法应用于传感器阵列的波束图设计时,存在收敛速度慢和计算结果稳定性低的问题,文中提出了一种模拟退火遗传算法.该算法对标准遗传算法的适应度函数、交叉算子和异化算子等多个要素分别进行了改进,并融入了模拟退火算法.模拟退火遗传算法应用于波束图设计时,具有较快的收敛速度和较高的稳定性.仿真结果表明基于该算法的波束图设计方法,获得了比传统方法旁瓣级更低的波束图.     

基于蚁群和模拟退火算法的聚类新方法

模拟退火算法具有良好的全局搜索能力,而蚁群算法具有良好的分布式并行性和正反馈能力.针对样本维数大、数目多时聚类效果不满意的问题,提出了混合的蚁群模拟退火算法,思路是利用K-均值算法的结果作为初值,再使用蚁群算法和模拟退火算法对初值进行调整聚类,结果表明这种算法比较有效.     

热处理对片状Fe-Si-Al磁微粉微波电磁性能的影响

以气体雾化Fe-Si-Al(Fe5.5Si9.5Al)合金粉末为原料,采用退火热处理和机械球磨相结合的方法制备出了片状Fe-Si-Al磁微粉,并研究了退火热处理对片状磁微粉微波电磁性能的影响.研究表明:通过对原料进行机械球磨可以获得片状形貌优良、磁性能良好的Fe-Si-Al磁微粉.机械球磨使Fe-Si-Al粉末的磁导率...     

中短波HgCdTe金属接触的退火研究

为制备良好的碲镉汞金属接触,研究了热退火处理对中短波Hg空位掺杂碲镉汞金属接触的影响。对中短波HgCdTe-Sn/Au接触及中波HgCdTe-Cr/Au接触经不同条件退火后的接触进行了测量。对于短波碲镉汞,p型HgCdTe-Sn/Au接触经95℃,30 min退火可降低比接触电阻2个量级,而经125℃,30 min退火可降低3个量级;离子注入的n型HgCdTe-Sn/Au接触则容易形成欧姆接触。对于中波碲镉汞,退火前p型HgCdTe-Sn/Au接触平均比接触电阻为10-1Ωcm2量级,经适当条件退火可以降低3个量级;此外,Sn/Au比Cr/Au更适合作为中波HgCdTe的接触金属。因而HgCdTe金属接触可通过一定退火处理得到改善。     

应用于太阳能电池的氢化非晶亚氧化硅的退火优化

在此篇文章中,开发出了适用于工业化生产的氢化非晶亚氧化硅(a-SiOx:H)作为太阳能电池的钝化层的工艺方法。a-SiOx:H钝化层使用PECVD方法,在大概250℃条件下生长,气体由一氧化氮、氦气和硅烷组成。我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响,因为其对太阳能电池的最终效率影响很大。在4•Ω•cm,P型FZ硅片上测试,少数载流子寿命在退火前只有270us,在退火之后可以达到670us,相应的表面复合速率从70 cm/s 降到30 cm/s。光学特性分析发现,和在太阳能电池中经常使用的本征非晶硅钝化层相比,a-SiOx:H在蓝光附近的光的吸收率有很大的下降。本文引入制作a-SiOx:H钝化层的方法成本低、质量高,适合于工业化生产。     

Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition

Semiconducting Mg2Si films were synthesized on silicon (11 1) substrates by magnetron sputtering deposition and subsequent annealing in an annealing furnace filled with argon gas,and the effects of heat treatment on the formation and microstructure of Mg2Si films were investigated.The structural and morphological properties were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM),respectively.The results show that the crystal quality of Mg2Si films depends strongly on the annealing temperature,the annealing time and the deposited magnesium film thickness.Annealing at 400 ℃ for 5 h is optimal for the preparation of Mg2Si film.XRD and SEM results show that magnesium silicide film with various orientations is formed on the silicon surface because of the interdiffusion and reaction of magnesium with substrate silicon atoms,and the evolution of surface features on growing films is very dependent on the annealing temperature and time.     

GalaxyDock2: Protein–ligand docking using beta‐complex and global optimization

In this article, an enhanced version of GalaxyDock protein–ligand docking program is introduced. GalaxyDock performs conformational space annealing (CSA) global optimization to find the optimal binding pose of a ligand both in the rigid‐receptor mode and the flexible‐receptor mode. Binding pose prediction has been improved compared to the earlier version by the efficient generation of high‐quality initial conformations for CSA using a predocking method based on a beta‐complex derived from the Voronoi diagram of receptor atoms. Binding affinity prediction has also been enhanced by using the optimal combination of energy components, while taking into consideration the energy of the unbound ligand state. The new version has been tested in terms of binding mode prediction, binding affinity prediction, and virtual screening on several benchmark sets, showing improved performance over the previous version and AutoDock, on which the GalaxyDock energy function is based. GalaxyDock2 also performs better than or comparable to other state‐of‐the‐art docking programs. GalaxyDock2 is freely available at http://galaxy.seoklab.org/softwares/galaxydock.html . © 2013 Wiley Periodicals, Inc.     

退火温度对CdSe纳米薄膜的形成及光电性能影响

在室温下,采用循环伏安法在ITO上沉积CdSe纳米薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、紫外-可见(UV-VIS)分光光度计以及电化学工作站对不同温度退火后的CdSe纳米薄膜的晶体结构、形貌、光学性能、光电化学性能进行表征和测试。结果表明,退火温度对CdSe纳米薄膜的形貌和性能起到关键性作用。薄膜表面平整、厚度均匀,且由呈纳米颗粒状的立方相CdSe构成;经退火后,CdSe纳米颗粒出现不同程度的长大现象,Se含量随退火温度的升高而减少。紫外-可见吸收光谱表明随着退火温度的升高,CdSe纳米薄膜对可见光的吸收发生红移,表明禁带宽度逐渐减小,表现出量子尺寸效应。通过光电流测试表明随着退火温度的升高,CdSe薄膜的光电响应效应显著提高。