Thermal stability of ester linkage in the presence of 1,2,3‐Triazole moiety generated by click reaction

The copper(I)‐catalyzed alkyne‐azide cycloaddition (CuAAC), so‐called “click” reaction, is one of most useful synthetic strategies to connect two polymer chains. 1,2,3‐Triazole ring (TA) produced by the click reaction has good thermal and chemical stability. However, we observed that block copolymers synthesized by the click reaction showed thermal degradation to give homopolymers when they are thermally annealed at high temperature, which is required for obtaining equilibrium microdomain structure. To investigate the origin of thermal instability of block copolymers, we synthesized model polystyrenes (PSs) using systematically designed bi‐functional atom transfer radical polymerization (ATRP) initiators containing TA. PS including both ester and TA groups showed thermal decomposition at relatively low temperature (e.g., 140 °C). MALDI‐TOF analysis clearly demonstrated that the cleavage site is the ester group adjacent to TA. We also found that the bromine group located at the polymer chain end plays an important role in pyrolysis of ester groups at low temperature. The pyrolysis occurs by syn‐elimination of the ester group. This result implies that the phase behavior of block copolymer synthesized by click reaction should be carefully investigated when high temperature thermal annealing is required. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55, 427–436     

Flux and fluence dependence of disorder produced during implantation of 11B in silicon

The flux and fluence dependence of disorder produced in silicon during the implantation of ¹¹B has been investigated at room temperature, -50°C. and -120°C. Implantations were carried out with 200 keV ¹¹B ions using current densities in the range from 0.06μA/cm² to 15μA/cm², and the disorder monitored by measuring the energy spectra of backscattered protons which were incident on the sample at 450 keV parallel to a (110) axis. Significant differences in the dependence of the disorder on ¹¹B flux and fluence were observed between the implantations performed at room temperature and those carried out at the two lower temperatures.     

Hyperdoping of Si by ion implantation and pulsed laser melting

Ion implantation followed by pulsed laser melting is an extensively-studied method for hyperdoping Si with impurity concentrations that exceed the equilibrium solubility limit by orders of magnitude. In the last decade, hyperdoped Si has attracted renewed interest for its potential as an intermediate band material. In this review, we first examine the important experimental results on both solid and liquid phase crystal regrowth from early laser annealing studies. The highly non-equilibrium regrowth kinetics following pulsed laser melting and its implications for dopant incorporation processes are discussed. We then review recent work in hyperdoped Si for enhanced sub-band gap photoresponse and give a brief discussion on photodetector device performance.     

光伏电站设计智能优化

由于目前光伏电站设计目前没有相应的标准,因此以个人经验为指导的情况,无法保证电站建设的成本最优,鉴于此问题,本文提出了一种光伏电站优化设计方法,基于模拟退火算法,通过对光伏区域中的组件进行最优分组来实现两级电缆成本的最优。并通过实际项目对该算法进行检验,达到比较理想效果。     

NiuPt1-uSivGe1-v/Si0.72Ge0.28界面形貌的改善

针对锗硅在形成金属锗硅化物时存在部分应力释放、界面形貌特性变差的问题,提出了在Si0.72Ge0.28上分别外延薄硅(Si)覆盖层和锗硅(Si072Ge0.28)缓冲层的工艺方案.实验结果表明,通过两步快速热退火,两个方案的工艺条件都能形成低阻的NiuPt1-uSitGe1-v和改善NivPt1-uSitGe./Si0.72Ge0.28的界面形貌.但相比较而言,在Si0.72Ge0.28上外延10 nm Si覆盖层的方案能够形成更好的NiuPt1-uSivGe1-t/Si0.72Ge0.28界面形貌.与没有改进的方案相比,该方案形成的肖特基接触更具有更低的肖特基接触势垒高度,更易形成欧姆接触.     

太阳能建筑物外观及表面光伏组件铺设优化

针对太阳能建筑物外观图的设计及外表面太阳能光伏组件铺设优化问题,首先通过建立以建筑物5个外表面全年总辐射量最大为目标的单目标规划模型,并考虑建筑物的设计要求,基于模拟退火法给出了建筑物的外观设计图,并根据电池性能的优劣顺序及限制条件,利用贪心算法得到建筑物外表电池铺设方案,最后给出了这种方案下的投资收回年限及寿命期内的经济效益。     

高速传输系统用低损耗单模光纤的研究

介绍了国际上低损耗单模光纤的研究进展,从理论上分析了低损耗单模光纤实现的技术途径。通过对石英玻璃物理特性的研究,探索出石英玻璃光纤的退火工艺,以降低光纤的内应力从而降低光纤的衰减。采用自主知识产权的专利技术制造的光纤在1 310、1 550和1 625nm波长的衰减典型值分别为0.320、0.182和0.195dB/km。该光纤的技术指标优于ITU-T国际标准和GB/T规定的光纤指标值。     

Widely Tunable Morphologies in Block Copolymer Thin Films Through Solvent Vapor Annealing Using Mixtures of Selective Solvents

Thin films of block copolymers are extremely attractive for nanofabrication because of their ability to form uniform and periodic nanoscale structures by microphase separation. One shortcoming of this approach is that to date the design of a desired equilibrium structure requires synthesis of a block copolymer de novo within the corresponding volume ratio of the blocks. In this work, solvent vapor annealing in supported thin films of poly(2‐hydroxyethyl methacrylate)‐block‐poly(methyl methacrylate) [PHEMA‐b‐PMMA] by means of grazing incidence small angle X‐ray scattering (GISAXS) is investigated. A spin‐coated thin film of a lamellar block copolymer is solvent vapor annealed to induce microphase separation and improve the long‐range order of the self‐assembled pattern. Annealing in a mixture of solvent vapors using a controlled volume ratio of solvents, which are chosen to be preferential for each block, enables selective formation of ordered lamellae, gyroid, hexagonal, or spherical morphologies from a single‐block copolymer with a fixed volume fraction. The selected microstructure is then kinetically trapped in the dry film by rapid drying. This paper describes what is thought to be the first reported case where in situ methods are used to study the transition of block copolymer films from one initial disordered morphology to four different ordered morphologies, covering much of the theoretical diblock copolymer phase diagram.     

退火温度对TiO2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备（001）高活性晶面主导的TiO₂纳米片薄膜,利用循环伏安法在TiO₂纳米片薄膜上沉积CdSe颗粒,制备了TiO₂/CdSe纳米片异质结薄膜。分别在150、250、350、450 ℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、X射线光电子能谱分析仪（XPS）、紫外-可见（UV-Vis）分光光度计以及电化学工作站对不同温度退火后的TiO₂/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明：六方相CdSe纳米颗粒均匀包覆在TiO₂纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO₂纳米片表面的Se元素与Cd元素发生氧化;TiO₂/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO₂/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO₂/CdSe纳米片异质结薄膜的最佳退火温度为150 ℃,填充因子为0.77,光电转换效率达到3.12%。