Formation of β‐iPP in isotactic polypropylene/ethylene–propylene rubber blends: Effects of preparation method,composition, and thermal condition

The effects of preparation method, composition, and thermal condition on formation of β‐iPP in isotactic polypropylene/ethylene–propylene rubber (iPP/EPR) blends were studied using modulated differential scanning calorimeter (MDSC), wide angle X‐ray diffraction (WAXD), and phase contrast microscopy (PCM). It was found that the α‐iPP and β‐iPP can simultaneity form in the melt‐blended samples, whereas only α‐iPP exists in the solution‐blended samples. The results show that the formation of β‐iPP in the melt‐blended samples is related to the crystallization temperature and the β‐iPP generally diminishes and finally vanishes when the crystallization temperature moves far from 125 °C. The phenomena that the lower critical temperature of β‐iPP in iPP/EPR obviously increases to 114 °C and the upper critical temperature decreases to 134 °C indicate the narrowing of temperature interval, facilitating the formation of β‐iPP in iPP/EPR. Furthermore, it was found that the amount of β‐iPP in melt‐blended iPP/EPR samples is dependent on the composition and the maximum amount of β‐iPP formed when the composition of iPP/EPR blends is 85:15 in weight. The results through examining the effect of annealing for iPP/EPR samples at melt state indicate that this annealing may eliminate the susceptibility to β‐crystallization of iPP. However, only α‐iPP can be observed in solution‐blended samples subjected to annealing for different time. The PCM images demonstrate that an obvious phase‐separation happens in both melt‐blended and solution‐blended iPP/EPR samples, implying that compared with the disperse degree of EPR in iPP, the preparation method plays a dominant role in formation of β‐iPP. It is suggested that the origin of formation of β‐iPP results from the thermomechanical history of the EPR component in iPP/EPR. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1704–1712, 2007     

基于EDA虚拟实验室仿真精确度优化算法的研究

描述了一种减少仿真时所需计算次数的新技术,使得产品的优化可通过参数的变化来实现,并介绍一种改进SA的算法对获得的结果进行优化。     

Crystalline structure of polyamide 12 as revealed by solid‐state 13C NMR and synchrotron WAXS and SAXS

The crystalline structure of polyamide‐12 (PA12) was studied by solid‐state ¹³C nuclear magnetic resonance (NMR) as well as by synchrotron wide‐ and small‐angle X‐ray scattering (WAXS and SAXS). Isotropic and oriented PA12 showed different NMR spectra ascribed to γ‐ and γ′‐crystalline modifications, respectively. On the basis of the position of the first diffraction peak, the isotropic γ‐form and the oriented γ′‐form were shown to be with hexagonal crystalline lattice at room temperature. When heated, the two PA12 polymorphs demonstrated different behaviors. Above 140 °C, the isotropic γ‐PA12 partially transformed into α‐modification. No such transition was observed with the oriented γ′‐PA12 phase even after annealing at temperatures close to melting. A γ′–γ transition was observed here only after isotropization by melting point. Various structural parameters were extracted from the WAXS and SAXS patterns and analyzed as a function of temperature and orientation: the degree of crystallinity, the d‐spacings, the Bragg's long spacings, the average thicknesses of the crystalline (l_c) and amorphous (l_a) phases, and the linear crystallinity x_cl within the lamellar stacks. © 2005 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 43: 3720–3733, 2005     

Laser Annealing of Thin-Film Ferroelectric Heterostructures

Preliminary experiments on laser annealing of ferroelectric samples by ultraviolet radiation of a KrF laser are carried out. In principle, laser annealing allows one to reduce appreciably the duration of thermal action, minimize the size of the samples treated, and control the crystallization processes in the samples. A special focussing system was employed to provide homogeneous irradiation of the spot with dimensions of ~1×1 cm² within a broad energy range from 0.1 to 10~J per pulse. The range of energy densities leading to phase transitions in thin films is determined.     

The effect of simultaneous temperature, pressure and stress on the experimental annealing of spontaneous fission tracks in apatite: a brief overview

Tracks made in minerals by the electronic stopping of uranium fission fragments provide a modern geological dating tool, and are believed also to yield specific information on the low-temperature thermal history of rocks. Experimental work showing that the damaged crystal lattice along a fission track recovers primarily as a function of temperature ignored the fact that the basic theory of atomic diffusion requires an exponential decrease in the intrinsic diffusion coefficient with increasing pressure. Here, fission track recovery was experimentally investigated in basic apatite under the simultaneous influences of temperature, pressure and stress. We show that track fading is a complex recovery mechanism responding to several environmental physical parameters simultaneously. In particular a strong decrease in the track recovery rate was observed as a function of increasing pressure. And a nearly temperature-independent recovery was observed in samples under stress.     

A Generalized Markov Sampler

A recent development of the Markov chain Monte Carlo (MCMC) technique is the emergence of MCMC samplers that allow transitions between different models. Such samplers make possible a range of computational tasks involving models, including model selection, model evaluation, model averaging and hypothesis testing. An example of this type of sampler is the reversible jump MCMC sampler, which is a generalization of the Metropolis–Hastings algorithm. Here, we present a new MCMC sampler of this type. The new sampler is a generalization of the Gibbs sampler, but somewhat surprisingly, it also turns out to encompass as particular cases all of the well-known MCMC samplers, including those of Metropolis, Barker, and Hastings. Moreover, the new sampler generalizes the reversible jump MCMC. It therefore appears to be a very general framework for MCMC sampling. This paper describes the new sampler and illustrates its use in three applications in Computational Biology, specifically determination of consensus sequences, phylogenetic inference and delineation of isochores via multiple change-point analysis.     

Characteristics in optimization of CGH for array generator

A method of simulated annealing in optimization of a computer generated holo-gram(CGH)is presented.The characteristics of energy in annealing curve are analyzed.Thecooling schedule such as giving an initial temperature,the temperature function,the numberof interactions and stopping criterion are discussed.As an example,an optimization of phaserelief kinoform,a CGH with multiple phase levels,is implemented.     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.     

Computational experience with general equilibrium problems

We report on computational experience with an implementation of three algorithms for the general economic equilibrium problem. As a result we get that the projection algorithm for variational inequalities increases the size of solvable models by a factor of 5–10 in comparison with the classical homotopy method. As a third approach we implemented a simulated annealing heuristic which might be suitable to estimate equilibria for very large models.Supported by the German Research Association (Deutsche Forschungsgemeinschaft, SFB 303).     

SiGe: An attractive material for post-CMOS processing of MEMS

This work gives an overview of the different developments for silicon germanium (Si_1−xGe_x) from a MEMS post-processing perspective. First, the maximum processing temperature that does not introduce any damage or degradation into the standard characteristics of the CMOS driving electronics is specified. Then, the optimal type of silicon and germanium gas sources and deposition technique that results in an economical process are identified. Next, the selection criteria for a low thermal budget doping method and doping species are discussed. Finally, the advantage and disadvantage for the different approaches implemented for enhancing the physical properties of poly Si_1−xGe_x at a CMOS backend compatible temperature are highlighted. It is shown that the optimal method depends on the application requirements and the CMOS technology used for realizing the driving electronics.