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151.
Joshua D. Caldwell Kendrick X. Liu Marko J. Tadjer Orest J. Glembocki Robert E. Stahlbush Karl D. Hobart Fritz Kub 《Journal of Electronic Materials》2007,36(4):318-323
Stacking faults within 4H-SiC PiN diodes are known to be detrimental to device operation. Here, we present electroluminescence
(EL) images of 4H-SiC PiN diodes providing evidence that electrically and optically stimulated Shockley stacking fault (SSF)
propagation is a reversible process at temperatures as low as 210°C. Optical beam induced current (OBIC) images taken following
complete optical stressing of a PiN diode and that lead to a small number of completely propagated SSFs provide evidence that
such defects propagate across the n–/p+ interface and continue to grow throughout the p+ layer. These observations bring about
questions regarding the validity of the currently accepted driving force mechanism for SSF propagation. 相似文献
152.
Copper (titanium) [Cu(Ti)] films with low titanium (Ti) concentration were found to form thin Ti-rich barrier layers at the
film/substrate interfaces after annealing, which is referred to as self-formation of the barrier layers. This Cu(Ti) alloy
was one of the best candidates for interconnect materials used in next-generation ultra-large-scale integrated (ULSI) devices
that require both very thin barrier layers and low-resistance interconnects. In the present paper, in order to investigate
the influences of annealing ambient on resistivity and microstructure of the Cu alloys, the Cu(7.3at.%Ti) films were prepared
on the SiO2 substrates and annealed at 500°C in ultra-high vacuum (UHV) or argon (Ar) with a small amount of impurity oxygen. After annealing
the film at 500°C in UHV, the resistivity was not reduced below 16 μΩ-cm. Intermetallic compounds of Cu4Ti were observed to form in the films and believed to cause the high resistivity. However, after subsequently annealing in
Ar, these compounds were found to decompose to form surface TiO
x
and interfacial barrier layers, and the resistivity was reduced to 3.0 μΩ-cm. The present experiment suggested that oxygen
reactive to titanium during annealing played an important role for both self-formation of the interfacial barrier layers and
reduction of the interconnect resistivity. 相似文献
153.
Hyeongnam Kim Michael L. Schuette Jaesun Lee Wu Lu James C. Mabon 《Journal of Electronic Materials》2007,36(9):1149-1155
The Ni/AlGaN interfaces in AlGaN/GaN Schottky diodes were investigated to explore the physical origin of post-annealing effects
using electron beam induced current (EBIC), current–voltage (I–V) characteristics, and X-ray photoelectron spectroscopy (XPS). The EBIC images of the annealed diodes showed that the post-annealing
process reduces electrically active states at the Schottky metal/AlGaN interfaces, leading to improvement of diode performance,
for example a decrease in reverse leakage current and an increase in Schottky barrier heights. Pulsed I–V characteristics indicate the Fermi level is up-shifted after annealing, resulting in a larger sheet carrier density at the
AlGaN/GaN interface. Unintentional oxidation of the free AlGaN surface during the post-annealing process, revealed by XPS
analysis, may prevent electron trapping near the drain-side of the gate edges. We suggest that the post-annealing process
under an optimized conditions can be an effective way of passivating AlGaN/GaN heterojunction field-effect transistors. 相似文献
154.
155.
156.
利用傅立叶转换红外光谱和Raman谱仪分析了0.98 GeV的Fe离子在电子能损Se为3.5 keV/nm时, 不同辐照剂量(5×1010 —8×1013 ions/cm2)下, 在C60薄膜中引起的辐照损伤效应。 分析表明, Fe离子辐照引起了C60分子的聚合与损伤。 在辐照剂量达到一中间值1×1012 ions/cm2, C60分子的损伤得到部分恢复, 归因于电子激发引起的退火效应。 通过对Raman数据的拟合分析, 演绎出Fe离子辐照在C60材料中形成的潜径迹截面或引起损伤的截面约为1.32×10-14 cm2。 相似文献
157.
Fluctuations of the semiconductor surface potential in a Si-SiO2 structure, caused by irradiation with different high-energy particles (50 MeV electrons and 40 keV arsenic ions) and subsequent annealing, have been studied by measuring the semiconductor interface state parameters. It is established that the fluctuation of the semiconductor surface potential decreases slightly, from 0.049 V to 0.044 V, after irradiation, while a considerable increase is observed after annealing. For the samples irradiated by arsenic ions, the increase in fluctuation is much larger (0.096 V) than that for the electron-irradiated samples (0.06 V). 相似文献
158.
ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C2H3O2)2], monoethanolamine [H2NC2H4OH] and isopropanol. The deposited films were dried at 50 and 300 °C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm−2 on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 °C for the formation of crystalline ZnO. 相似文献
159.
The reduction of complementary metal oxide semiconductor dimensions through transistor scaling is in part limited by the SiO2 dielectric layer thickness. Among the materials evaluated as alternative gate dielectrics one of the leading candidate is La2O3 due to its high permittivity and thermodynamic stability. However, during device processing, thermal annealing can promote deleterious interactions between the silicon substrate and the high-k dielectric degrading the desired oxide insulating properties.The possibility to grow poly-SiGe on top of La2O3//Si by laser assisted techniques therefore seems to be very attractive. Low thermal budget techniques such as pulsed laser deposition and crystallization can be a good choice to reduce possible interface modifications due to their localized and limited thermal effect.In this work the laser annealing by ArF excimer laser irradiation of amorphous SiGe grown on La2O3//Si has been analysed theoretically by a numerical model based on the heat conduction differential equation with the aim to control possible modifications at the La2O3//Si interface. Simulations have been carried out using different laser energy densities (0.26-0.58 J/cm2), different La2O3 film thickness (5-20 nm) and a 50 nm, 30 nm thick amorphous SiGe layer. The temperature distributions have been studied in both the two films and substrate, the melting depth and interfaces temperature have been evaluated. The fluences ranges for which the interfaces start to melt have been calculated for the different configurations.Thermal profiles and interfaces melting point have shown to be sensitive to the thickness of the La2O3 film, the thicker the film the lower the temperature at Si interface.Good agreement between theoretical and preliminary experimental data has been found.According to our results the oxide degradation is not expected during the laser crystallization of amorphous Si0.7Ge0.3 for the examined ranges of film thickness and fluences. 相似文献
160.