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101.
A series of the copolymers of ethylene with 1-hexene(M1–M9) synthesized by metallocene catalyst Et[Ind]2ZrCl2/MAO was studied by differential scanning calorimetry and successive self-nucleation and annealing(SSA) thermal fractionation. The distribution of methylene sequence length(MSL) in the different copolymers was determined using the SSA method. The comonomer contents of samples M4 and M5 are 2.04 mol% and 2.78 mol%, respectively. Both M4 and M5 have low comonomer content and their MSL distribution profiles exhibit a monotonous increase trend with their MSL. The longest MSL of M5 is 167, and its corresponding molar percent is 43.95%, which is higher than that of M4. Moreover, the melting temperature(Tm) of M5 is also higher than that of M4. The comonomer contents of samples M7, M8, and M9 are 8.73 mol%, 14.18 mol% and 15.05 mol%, respectively. M7, M8, and M9 have high comonomer contents, and their MSL distribution profiles display unimodality. M7 has a lower peak value of 33 and a narrow MSL distribution, resulting in a Tm lower than that of M8 and M9. The MSL and its distribution are also key points that influence the melting behavior of copolymers. Sometimes, MSL and its distribution of copolymers have a greater impact on it than the total comonomer contents, which is different from traditional views. 相似文献
102.
Adeline Lanterne Jrme Le Perchec Samuel Gall Sylvain Manuel Marianne Coig Aurlie Tauzin Yannick Veschetti 《Progress in Photovoltaics: Research and Applications》2015,23(11):1458-1465
Ion implantation has the advantage of being a unidirectional doping technique. Unlike gaseous diffusion, this characteristic highlights strong possibilities to simplify solar cell process flows. The use of ion implantation doping for n‐type PERT bifacial solar cells is a promising process, but mainly if it goes with a unique co‐annealing step to activate both dopants and to grow a SiO2 passivation layer. To develop this process and our SONIA cells, we studied the impact of the annealing temperature and that of the passivation layers on the electrical quality of the implanted B‐emitter and P‐BSF. A high annealing temperature (above 1000 °C) was necessary to fully activate the boron atoms and to anneal the implantation damages. Low J0BSF (BSF contribution to the saturation current density) of 180 fA/cm2 was reached at this high temperature with the best SiO2 passivation layer. An average efficiency of 19.7% was reached using this simplified process flow (“co‐anneal process”) on large area (239 cm2) Cz solar cells. The efficiency was limited by a low FF, probably due to contaminations by metallization pastes. Improved performances were achieved in the case of a “separated anneals” process where the P‐BSF is activated at a lower temperature range. An average efficiency of 20.2% was obtained in this case, with a 20.3% certified cell. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
103.
Xiliang LIU Shaomin FENG Xin WANG Jin QI Dong LEI Yadong LI Wei BAI 《Turkish Journal of Chemistry》2020,44(5):1430
Polydioxanone (PPDO) is synthesized by ring-opening polymerization of p-dioxanone, using stannous octoate as the catalyst. The polarized optical micrograph (POM) shows thes pherulite growth rate of PPDO decreases with an increase in the isothermal crystallization temperature. PPDO is compression-molded into bars, and PPDO bars are subjected to isothermal annealing at a range of temperatures (Ta = 50, 60, 70, 80, 90, and 100 °C), and correspond to three different annealing times (ta = 1h, 2h, 3h). The effect on PPDO is investigated by using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). With an increase in Ta and ta, the grain size and the degree of crystallinity also increase. Meanwhile, the tensile strength is significantly improved. The PPDO bars (90 °C, 2 h) reach the maximum crystallinity (57.21%) and the maximum tensile strength (41.1 MPa). Interestingly, the heat treatment process does not result in serious thermal degradation. It is observed that the hydrolytic degradation of the annealed PPDO is delayed to some extent. Thus, annealed PPDO might have potential applications, particularly in the fields of orthopedic fixation and tissue engineering. 相似文献
104.
A sequence of random variables X0,X1, … with values in {0, 1, …, n} representing a general finite-state stochastic process with absorbing state 0 is said to be directionally biased towards 0, if, for all j > 0, ϵj: = infk>0 {j − E[Xk | Xk−1 = j]} > 0. For such sequences, let t be the expected value of the time to absorption at 0. For a fixed set of biases, the least upper bound for this time can be computed with an algorithm requiring O(n2) steps. Simple upper bounds are described. In particular, t ≤ E[bx0], where bi = Σj≤i 1/¯ϵj and ¯ϵj = minl≥j {ϵl}. If all ϵj ≤ ϵj + 1 (so ¯ϵj = ϵj) and ϵn < 1, this bound for t is the best possible. For certain finite stochastic processes which we term conditionally independent of X0 = i, b(i) bounds the expected time given X0 = i. Similar results are given for lower bounds. The results of this paper were designed to be a useful tool for determining rates of convergence of stochastic optimization algorithms. © 1996 John Wiley & Sons, Inc. 相似文献
105.
提出了一种基于下降的单纯形算法和模拟退火算法的混合优化算法用于反演地声参数。下降的单纯形方法对于目标函数的梯度信息相当敏感,因此在参数空间中能迅速地移向极小点,但由于它只能向下移动,因而往往易陷入局部极小且依赖初始条件。而模拟退火算法使用随机选取的目标函数值在参数空间中搜索最佳答案,其结构有利于从局部极小中跳出,但是由于它不能利用目标函数的梯度信息因而对参数空间的搜索效率很低。混合方法结合了下降的单纯形方法与快速模拟退火方法这二者的优点,能更有效、更迅速地获得全局最优点。 相似文献
106.
制备高质量的MgB2薄膜是实现MgB2超导电子器件应用的前提和基础.我们用电子束蒸发B膜和Mg/B多层膜为前驱然后后退火的方法,分别在高温区(~900℃)和中温区(~750℃)成功获得了MgB2超导薄膜.改变退火的Ar气压条件,采用B膜前驱退火的样品Tc可达到38K以上,转变宽度0.3K.Mg/B多层膜的结果尽管Tc稍低(Tc~35K),但薄膜表面更加均匀,且避免了高温下Mg蒸汽污染的问题.对于两种前驱退火中观察到的完全不同的退火气压影响,我们认为是与其各自的超导成相过程相联系的,在此基础上我们对退火气压效应给出了自己的分析和解释,为今后进一步细致研究退火过程中的薄膜生长机制提供了参考. 相似文献
107.
本文论述了ISO/TS16949的跨部门小组组建的目的,小组的组成、职责,以及跨部门工作小组在产品质量控制中所起的作用. 相似文献
108.
提出了用神经网络方法测定无机铬的形态。在Back Propagation(BP)算法的基础上,吸取了模拟退火算法的优点,解决了BP算法容易陷入局部极小点的问题。经实际样品分析,结果满意。 相似文献
109.
通过分析石英材料粘度与温度的关系,得出了石英的退火温度范围.结合超高压气体放电光源的要求,对玻壳精密退火工艺进行研究.该工艺充分考虑了因玻壳厚度和降温造成的应力.给出了工艺参数的计算方法,增加了慢速降温阶段,减少了玻壳的剩余应力. 相似文献
110.
厚胶光刻非线性畸变的校正 总被引:3,自引:0,他引:3
利用厚胶光刻技术制作大深度微结构元件是一种有效的途径,但厚胶光刻过程中的非线性畸变对光刻面形质量的严重影响限制了该技术的应用,基于此,提出了一种对掩模透射率函数进行校正的方法。分析空间像形成及其在光刻胶内传递、曝光、显影等过程中非线性因素的影响,利用模拟退火算法对掩模透射率函数进行校正,以提高光刻面形质量,并以凹面柱透镜为例,给出了校正前后的显影轮廓模拟结果,其校正后浮雕面形的体积偏差仅为2.63%。该方法在有效改善面形质量的同时,并没有引起掩模的设计、制作难度及费用增加,这对于设计、制作高质量的微结构元件有重要意义。 相似文献