Controlling the Microstructure of Conjugated Polymers in High‐Mobility Monolayer Transistors via the Dissolution Temperature

It remains a challenge to precisely tailor the morphology of polymer monolayers to control charge transport. Herein, the effect of the dissolution temperature (T_dis) is investigated as a powerful strategy for morphology control. Low T_dis values cause extended polymer aggregation in solution and induce larger nanofibrils in a monolayer network with more pronounced π–π stacking. The field‐effect mobility of the corresponding monolayer transistors is significantly enhanced by a factor of four compared to devices obtained from high T_dis with a value approaching 1 cm² V^?1 s^?1. Besides that, the solution kinetics reveal a higher growth rate of aggregates at low T_dis, and filtration experiments further confirm that the dependence of the fibril width in monolayers on T_dis is consistent with the aggregate size in solution. The generalizability of the T_dis effect on polymer aggregation is demonstrated using three other conjugated polymer systems. These results open new avenues for the precise control of polymer aggregation for high‐mobility monolayer transistors.     

Ordered Solid‐State Microstructures of Conjugated Polymers Arising from Solution‐State Aggregation

Controlling the solution‐state aggregation of conjugated polymers for producing specific microstructures remains challenging. Herein, a practical approach is developed to finely tune the solid‐state microstructures through temperature‐controlled solution‐state aggregation and polymer crystallization. High temperature generates significant conformation fluctuation of conjugated backbones in solution, which facilitates the polymer crystallization from solvated aggregates to orderly packed structures. The polymer films deposited at high temperatures exhibit less structural disorders and higher electron mobilities (up to two orders of magnitude) in field‐effect transistors, compared to those deposited at low temperatures. This work provides an effective strategy to tune the solution‐state aggregation to reveal the relationship between solution‐state aggregation and solid‐state microstructures of conjugated polymers.     

Crystallization Mechanism of 9,9-Diphenyl-dibenzosilole from Solids

Organic semiconductor (OSC) crystals have great potential to be applied in many fields, as they can be flexibly designed according to the demands and show an outstanding device performance. However, OSCs with the capacity of solid-state crystallization (SSC) are developing too slowly to meet demands in productions and applications, due to their difficulties in molecular design and synthesis, unclear mechanism and high dependence on experimental conditions. In this work, in order to solve the problems, we synthesized an organic semiconductor capable of SSC at room temperature by adjusting the relationship between conjugated groups and functional groups. The thermodynamic and kinetic properties have been studied to discover the model of film SSC. Moreover, it can be purposefully controlled to prepare the high-quality crystals, and their corresponding organic electronic devices were further fabricated and discussed.     

有机单晶场效应晶体管

有机单晶场效应晶体管的研究对于探索电子的本质特性具有十分重要的意义。近几年来,不管是在制备技术还是在器件性能的研究方面,有机单晶场效应晶体管均取得了很大的进步,并由此引起了社会的广泛关注,成为场效应晶体管领域的一个重要研究方向。本文主要介绍了有机单晶的生长方法、有机场效应器件的各种制备技术、器件的迁移率及其影响因素,并对有机单晶场效应晶体管的发展前景和面临的一些问题作了简要的讨论。     

A Conjugated Polymer Containing Arylazopyrazole Units in the Side Chains for Field‐Effect Transistors Optically Tunable by Near Infra‐Red Light

Optically tunable field‐effect transistors (FETs) with near infra‐red (NIR) light show promising applications in various areas. Now, arylazopyrazole groups are incorporated in the side chains of a semiconducting donor–acceptor (D‐A) polymer. The cis–trans interconversion of the arylazopyrazole can be controlled by 980 nm and 808 nm NIR light irradiation, by utilizing NaYF₄:Yb,Tm upconversion nanoparticles and the photothermal effect of conjugated D‐A polymers, respectively. This reversible transformation affects the interchain packing of the polymer thin film, which in turn reversibly tunes the semiconducting properties of the FETs by the successive 980 nm and 808 nm light irradiation. The resultant FETs display fast response to NIR light, good resistance to photofatigue, and stability in storage for up to 120 days. These unique features will be useful in future memory and bioelectronic wearable devices.     

Molecularly engineered graphene surfaces for sensing applications: A review

Graphene is scientifically and commercially important because of its unique molecular structure which is monoatomic in thickness, rigorously two-dimensional and highly conjugated. Consequently, graphene exhibits exceptional electrical, optical, thermal and mechanical properties. Herein, we critically discuss the surface modification of graphene, the specific advantages that graphene-based materials can provide over other materials in sensor research and their related chemical and electrochemical properties. Furthermore, we describe the latest developments in the use of these materials for sensing technology, including chemical sensors and biosensors and their applications in security, environmental safety and diseases detection and diagnosis.     

A structurally ordered thiophene-thiazole copolymer for organic thin-film transistors

This paper reports a new donor-acceptor copolymer semiconductor, PTBTh, comprising bithiophene and bithiazole where the regular coplanar structure and the intramolecular charge transfer are expected to increase the opportunity for --- stacking and charge transport. The AFM image shows lamellar stacking of the polymer on the surface. The field-effect transistor (FET) properties of PTBTh have been evaluated by a bottom-contact/bottom-gate TFT configuration. The device showed a high hole mobility of 1.14×10-2 cm2 V-1 s-1 and a current on/off ratio of 3×105 with the polymer thin film annealed at a mild temperature of 120 ℃ when measured under ambient conditions.     

Irreversible capacity of the amorphous silicon thin-film electrodes

Irreversible processes accompanying the lithium incorporation into amorphous thin-film silicon are investigated. It is shown that the irreversible processes occurred during the cathodic polarization result in the formation of passive film at the silicon surface. The passive film at silicon is close, in its composition, to the passive film at carbonaceous materials. However, unlike the carbonaceous electrodes, no effect of electrolyte composition on the irreversible capacity of the silicon electrodes is observed.     

表面力仪的改进及超薄膜流变特性的实验研究

在对原表面力仪进行较大改进的基础上 ,以 5 0 0 SN基础油和十六烷为研究对象 ,进行了超薄膜流变特性的实验研究 .结果表明 :在超薄膜润滑条件下 ,5 0 0 SN和十六烷均表现出明显的非牛顿剪切响应 ,即剪切稀释现象 ;摩擦力幅值随剪切速度的增大急剧上升到最大值 ,然后下降至某一固定值附近并产生波动 ;剪切挤压下的临界膜厚小于静态挤压的临界膜厚 ,剪切运动对吸附层有序结构产生破坏作用     

BST薄膜电容器的制备及其调谐性能研究

利用氩离子束溅射技术在SiO2/Si衬底上淀积Ba0.8Sr0.2TiO3(BST)薄膜,该薄膜在氧气气氛中500℃退火处理30 min,然后利用集成电路平面工艺将薄膜制作成叉指结构电容器。X-射线衍射仪(XRD)和扫描电镜(SEM)分析表明,BST薄膜具有钙钛矿结构,薄膜表面光滑,晶粒致密且分布均匀。调谐性能测试结果表明,该电容器具有较高的电容调谐率,在室温100 kHz频率下,对于2 V的直流偏压,其调谐率和损耗因子分别为62%和0.02。这说明具有此结构的BST薄膜电容器可望应用于微波集成电路。