An Artificial Autonomic Nervous System That Implements Heart and Pupil as Controlled by Artificial Sympathetic and Parasympathetic Nerves

The autonomic nervous system maintains homeostasis in organisms through complex neural pathways and responds adaptively to changes in the external and internal environment. The fabrication of an artificial autonomic nervous system is reported that replicates combined effects of sympathetic and parasympathetic nerves on cardiac activity and pupillary control, to mimic the regulation of autonomic nervous system to external changes. The artificial autonomic nerve-controlled pupil contraction and relaxation, modulating the rate of heartbeats for normal cardiac rhythm and arrhythmia as reflected by blink rates of a signal indicator. These functions are switched by using a parallel-channeled synaptic transistor with a special n-i-p heterostructure that has a 2D h-BN insulator in the middle to provide barrier against ion injection into the 2D MoS₂ bottom n-channel and enable short-term plasticity as induced by acetylcholine, and the electrochemical doping reaction occurred at the P3HT nanowire p-channels on top to enable relatively long-term plasticity as induced by noradrenaline. Low-energy consumption down to femtojoule and an ultrahigh paired-pulse facilitation index up to ≈455% are demonstrated. An artificial neural network based on device characteristics achieves a high recognition accuracy for electrocardiogram patterns. This study extends insights into artificial nerves-inspired biological signal processing and recognition.     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.     

Biomolecules-Incorporated Metal-Organic Frameworks Gated Light-Sensitive Organic Photoelectrochemical Transistor for Biodetection

Incorporating biomolecules into metal-organic frameworks (MOFs) as exoskeletons to form biomolecules-MOFs biohybrids has attracted great attention as an emerging class of advanced materials. Organic devices have been shown as powerful platforms for next-generation bioelectronics, such as wearable biosensors, tissue engineering constructs, and neural interfaces. Herein, biomolecules-incorporated MOFs as innovative gating module is realized for the first time, which is exemplified by biocatalytic precipitation (BCP)-oriented horseradish peroxidase (HRP)-embedded zeolitic imidazolate framework-90 (HRP@ZIF-90)/CdIn₂S₄ gated organic photoelectrochemical transistor under light illumination. In connection to a sandwich immunocomplexing targeting the model analyte human IgG, the IgG-dependent generation of H₂O₂ and the tandem HRP-triggered BCP reaction can cause the in situ blocking of the pore network of ZIF-90, leading to variant gating effect with corresponding responses of the device. This representative biodetection achieved good analytical performance with a wide linear range and a low detection limit of 100 fg mL⁻¹. In the view of the plentiful biomolecule-MOF complexes and their potential interactions with organic systems, this study provides a proof-of-concept study for the generic development of biomolecules-MOFs-gated electronics and beyond.     

Metal-Organic Framework Thin Films Grown on Functionalized Graphene as Solid-State Ion-Gated FETs

The unique properties of 2D-materials like graphene are exploited in various electronic devices. In sensor applications, graphene shows a very high sensitivity, but only a low specificity. This shortcoming can be mastered by using heterostructures, where graphene is combined with materials exhibiting high analyte selectivities. Herein, this study demonstrates the precise deposition of nanoporous metal-organic frameworks (MOFs) on graphene, yielding bilayers with excellent specificity while the sensitivity remains large. The key for the successful layer-by-layer deposition of the MOF films (SURMOFs) is the use of planar polyaromatic anchors. Then, the MOF pores are loaded with ionic liquid (IL). For functioning sensor devices, the IL@MOF films are grown on graphene field-effect transistors (GFETs). Adding a top-gate electrode yields an ion-gated GFET. Analysis of the transistor characteristics reveals a clear Dirac point at low gate voltages, good on-off ratios, and decent charge mobilities and densities in the graphene channel. The GFET-sensor reveals a strong and selective response. Compared to other ion-gated-FET devices, the IL@MOF material is relatively hard, allowing the manufacturing of ultrathin devices. The new MOF-anchoring strategy offers a novel approach generally applicable for the functionalization of 2D-materials, where MOF/2D-material hetero-bilayers carry a huge potential for a wide variety of applications.     

Wearable Organic Electrochemical Transistor Array for Skin-Surface Electrocardiogram Mapping Above a Human Heart

Electrocardiogram (ECG) mapping can provide vital information in sports training and cardiac disease diagnosis. However, most electronic devices for monitoring ECG signals need to use multiple long wires, which limit their wearability and conformability in practical applications, while wearable ECG mapping based on integrated sensor arrays has been rarely reported. Herein, ultra-flexible organic electrochemical transistor (OECT) arrays used for wearable ECG mapping on the skin surface above a human heart are presented. QRS complexes of ECG signals at different recording distances and directions relative to the heart are obtained. Furthermore, the ECG signals are successfully analyzed by the devices before and after exercise, indicating potential applications in some sports training and fitness scenarios. The OECT arrays that can conveniently monitor spacial ECG signals in the heart region may find niche applications in wearable electronics and healthcare products in the future.     

石墨烯及石墨烯场效应管的辐照效应研究进展

石墨烯由于高迁移率、高导热性、柔韧性好和机械强度高等优异性能使其成为构筑新型纳米电子器件的重要材料,已成为电子信息、生物医学、显示等领域的研究热点。当石墨烯材料及其电子器件放置于含有辐照因素的场景中时,会因为与高能光子和带电粒子等相互作用而改变晶格结构或积累电荷,使石墨烯材料及电子器件的性能发生变化。本文主要综述了典型辐照因素对石墨烯及器件的主要效应及研究进展,旨在总结不同辐照在石墨烯及其电子器件中引发的物理效应,归纳其微观-宏观性质变化,为加深石墨烯材料及器件的辐照效应的理解,推动其在辐照场景中的实际应用奠定基础。     

基于单电子晶体管的数字滤波器硬件实现

基于互补型单电子晶体管（SET）逻辑门，提出了SET加法器、移位寄存器和ROM的单元电路。在讨论数字滤波器硬件实现原理基础上，由这三个单元电路实现了一个二阶IIR滤波器。SET的SPICE宏模型验证了设计的正确性。     

变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性

通过对异质结材料上制作的肖特基结构变温C-V测量和传输线模型变温测量,研究了蓝宝石衬底AlGaN/GaN异质结高电子迁移率晶体管的直流特性在25～200℃之间的变化,分析了载流子浓度分布、沟道方块电阻、欧姆比接触电阻和缓冲层泄漏电流随温度的变化规律.得出了器件饱和电流随温度升高而下降主要由输运特性退化造成,沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论.同时,证明了GaN缓冲层漏电不是导致器件退化的主要原因.     

Temperature dependence of transfer characteristics of OTFT memory based on DNA-CTMA gate dielectric

A nonvolatile memory based on an organic thin-film transistor (OTFT) with a biopolymer of DNA-cetyltrimethylammonium chloride (DNA-CTMA) acting as the gate dielectric layer was fabricated. The transfer characteristics of the device prepared by both DNA alone and DNA-CTMA showed a very large and stable hysteresis. In order to analyze the memory mechanism, the temperature dependence of the transfer characteristics, electric conductivity, differential scanning calorimetry (DSC), thermally stimulated depolarization current (TSDC) as well as the dielectric property of the DNA-CTMA film have been investigated. As a result, the quasi-ferroelectric polarization originating from the alignment of the intrinsic dipole moment inside the DNA-CTMA complex was identified as the main source of hysteresis in the lower temperature region.