离子敏感场效应晶体管及其应用

离子敏感场效应晶体管具有若干不同于寻常传感器的特点：超小型、全固态、集成化和自身阻抗变换等。它是一种很有发展前途的传感器。本文了讨论了离子敏感场效应晶体管的分类、结构和性能；评述了１９８９年以来其在临床医学和流动注射分析等方面的应用。引参考文献６７篇。     

Chemically Sensitive Field‐Effect Transistors and Chemiresistors: New Materials and Device Structures

Electronic sensor technology remains of widespread and intense interest. There are compelling needs to detect chemical species ranging from small molecules dispersed in the gas phase to complex biopolymers in aqueous solution. This review describes some recent advances in three main areas: chemically sensitive resistors (chemiresistors, CRs) including inorganic and organic based devices, field effect transistors (FETs) with semiconducting layers and/or gates with chemical sensitivity, and sensors based on the differential conductivity of nanotubes and nanowires. Results reported in the last two to three years are emphasized, highlighting some current trends in the development of sensors for applications such as diagnostics, process monitoring, and security.     

An Artificial Autonomic Nervous System That Implements Heart and Pupil as Controlled by Artificial Sympathetic and Parasympathetic Nerves

The autonomic nervous system maintains homeostasis in organisms through complex neural pathways and responds adaptively to changes in the external and internal environment. The fabrication of an artificial autonomic nervous system is reported that replicates combined effects of sympathetic and parasympathetic nerves on cardiac activity and pupillary control, to mimic the regulation of autonomic nervous system to external changes. The artificial autonomic nerve-controlled pupil contraction and relaxation, modulating the rate of heartbeats for normal cardiac rhythm and arrhythmia as reflected by blink rates of a signal indicator. These functions are switched by using a parallel-channeled synaptic transistor with a special n-i-p heterostructure that has a 2D h-BN insulator in the middle to provide barrier against ion injection into the 2D MoS₂ bottom n-channel and enable short-term plasticity as induced by acetylcholine, and the electrochemical doping reaction occurred at the P3HT nanowire p-channels on top to enable relatively long-term plasticity as induced by noradrenaline. Low-energy consumption down to femtojoule and an ultrahigh paired-pulse facilitation index up to ≈455% are demonstrated. An artificial neural network based on device characteristics achieves a high recognition accuracy for electrocardiogram patterns. This study extends insights into artificial nerves-inspired biological signal processing and recognition.     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.     

Metal-Organic Framework Thin Films Grown on Functionalized Graphene as Solid-State Ion-Gated FETs

The unique properties of 2D-materials like graphene are exploited in various electronic devices. In sensor applications, graphene shows a very high sensitivity, but only a low specificity. This shortcoming can be mastered by using heterostructures, where graphene is combined with materials exhibiting high analyte selectivities. Herein, this study demonstrates the precise deposition of nanoporous metal-organic frameworks (MOFs) on graphene, yielding bilayers with excellent specificity while the sensitivity remains large. The key for the successful layer-by-layer deposition of the MOF films (SURMOFs) is the use of planar polyaromatic anchors. Then, the MOF pores are loaded with ionic liquid (IL). For functioning sensor devices, the IL@MOF films are grown on graphene field-effect transistors (GFETs). Adding a top-gate electrode yields an ion-gated GFET. Analysis of the transistor characteristics reveals a clear Dirac point at low gate voltages, good on-off ratios, and decent charge mobilities and densities in the graphene channel. The GFET-sensor reveals a strong and selective response. Compared to other ion-gated-FET devices, the IL@MOF material is relatively hard, allowing the manufacturing of ultrathin devices. The new MOF-anchoring strategy offers a novel approach generally applicable for the functionalization of 2D-materials, where MOF/2D-material hetero-bilayers carry a huge potential for a wide variety of applications.     

Wearable Organic Electrochemical Transistor Array for Skin-Surface Electrocardiogram Mapping Above a Human Heart

Electrocardiogram (ECG) mapping can provide vital information in sports training and cardiac disease diagnosis. However, most electronic devices for monitoring ECG signals need to use multiple long wires, which limit their wearability and conformability in practical applications, while wearable ECG mapping based on integrated sensor arrays has been rarely reported. Herein, ultra-flexible organic electrochemical transistor (OECT) arrays used for wearable ECG mapping on the skin surface above a human heart are presented. QRS complexes of ECG signals at different recording distances and directions relative to the heart are obtained. Furthermore, the ECG signals are successfully analyzed by the devices before and after exercise, indicating potential applications in some sports training and fitness scenarios. The OECT arrays that can conveniently monitor spacial ECG signals in the heart region may find niche applications in wearable electronics and healthcare products in the future.     

基于单电子晶体管的数字滤波器硬件实现

基于互补型单电子晶体管（SET）逻辑门，提出了SET加法器、移位寄存器和ROM的单元电路。在讨论数字滤波器硬件实现原理基础上，由这三个单元电路实现了一个二阶IIR滤波器。SET的SPICE宏模型验证了设计的正确性。     

变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性

通过对异质结材料上制作的肖特基结构变温C-V测量和传输线模型变温测量,研究了蓝宝石衬底AlGaN/GaN异质结高电子迁移率晶体管的直流特性在25～200℃之间的变化,分析了载流子浓度分布、沟道方块电阻、欧姆比接触电阻和缓冲层泄漏电流随温度的变化规律.得出了器件饱和电流随温度升高而下降主要由输运特性退化造成,沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论.同时,证明了GaN缓冲层漏电不是导致器件退化的主要原因.     

基于物理并适用于电路仿真的多晶硅薄膜晶体管薄层电荷模型

本文利用薄层电荷理论,建立了一个基于表面势的、物理的多晶硅薄膜晶体管(Polysilicon Thin-Film Transistors,poly-Si TFTs)的电流模型,且该模型适用于电路仿真.推导了 poly-Si TFTs 表面势的近似解法,该求解法非迭代的计算大大地提高了计算效率,且精确度高并得到实验验证.基于物理的迁移率方程考虑了晶界势垒高度,和由于声子散射与表面粗糙散射引起的迁移率退化.基于 Brews 的薄层电荷模型和上述非迭代计算表面势,本电流模型同时考虑了漏致势垒降低(DIBL)效应、kink 效应和沟道长度调制效应.对不同沟长的器件实验数据比较发现,提出的模型在很广的工作电压内与实验数据符合得非常好.同时本模型的所有方程都具有解析形式,电流方程光滑连续,适用于电路仿真器如 SPICE.     

可编程控制波长调谐的环形掺铒光纤激光器

提出了一种新型的可调谐光纤激光器,器件采用介质薄膜干涉滤波器进行波长可编程调谐,调谐范围超过38 nm(1 526.5～1 564.6 nm),中心波长可精确调谐到C波段指定的ITU-T波长栅格的标准中心波长处,3 dB带宽小于0.08 nm,25 dB带宽小于0.22 nm,波长稳定性优于0.01 nm,边模抑制比大于60 dB,最大输出光功率35.6 mW,功率稳定性优于±0.02 dB,阈值泵浦功率和斜率效率分别为5.8 mW和36.6%.