Charge transport and recombination in heterostructure organic light emitting transistors

Light-emitting field effect transistors (LEFETs) are a class of organic optoelectronic device capable of simultaneously delivering the electrical switching characteristics of a transistor and the light emission of a diode. We report on the temperature dependence of the charge transport and emissive properties in a model organic heterostructure LEFET system from 300 K to 135 K. We study parameters such as carrier mobility, brightness, and external quantum efficiency (EQE), and observe clear thermally activated behaviour for transport and injection. Overall, the EQE increases with decreasing temperature and conversely the brightness decreases. These contrary effects can be explained by a higher recombination efficiency occurring at lower temperatures, and this insight delivers new knowledge concerning the optimisation of both the transport and emissive properties in LEFETs.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

薄膜偏振分光镜的研究

概述薄膜偏振分光镜的研究现状及其主要特点，重点分析薄膜偏振分光镜的设计原理,并利用等效折射率的方法计算中心波长的反射率．     

浮栅技术及其应用

介绍了浮栅技术的基本原理及应用情况。井对2种应用了浮栅技术的典型器件-浮栅MOS晶体管和神MOS晶体管做了详细介绍，分析了他们的基本结构和工作原理，以及建立浮栅MOS晶体管的等效模型，并说明了他们的应用情况及存在的不足。     

Intrinsic thermal stability and quenching recovery of thin-film superconductors with thermal boundary resistance

The stability behaviour of a thin-film superconductor under a localized release of thermal disturbance is investigated. Two-dimensional conjugate film/substrate conduction equation with anisotropic thermal conductivity of the film, and Joule heat are employed to investigate effects of substrate and thermal properties on the intrinsic stability and quenching recovery. To consider the thermal boundary resistance between film and substrate, an interfacial-layer model (ILM) with very low diffusivity and an acoustic mismatch model (AMM) are employed. Results show that the thermal boundary resistance influences strongly the intrinsic stability. Thermal boundary resistance increases intrinsic stability if the thermal conductivity of the substrate or the disturbance energy is large. Higher Biot numbers and thermal conductivity ratios of film to substrate in longitudinal direction influence stability favorably. We demonstrate also that operation of a film/substrate system, such as YBCO/MgO, is either intrinsically stable or irrecoverably unstable.The authors wish to express their sincere appreciation to Dr. R. C. Chen for his invaluable advice and suggestions during the course of this paper. This research was supported by the National Science Council of the R. O. C. through grant NSC 83-0401-E-009-006. The computations were performed on the IBM ES/9000 at the National Center For High-Performance Computing.     

基于LiCo0.8M0.2O2 (M=Ni,Zr)薄膜的全固态薄膜锂电池

用射频磁控溅射结合传统退火的方法制备LiCo0.8M0.2O2 (M=Ni,Zr)阴极薄膜．X射线衍射、拉曼光谱、扫描电子显微镜等手段表征了不同掺杂的LiCo0.8M0.2O2薄膜．结果显示,700℃退火的LiCo0.8M0．2O2薄膜具有类似α-NaFeO2的层状结构．通过对不同掺杂锂钴氧阴极的全固态薄膜锂电池Li／LiPON／LiCo0.8M0.2O2的电化学性能研究表明,电化学活性元素Ni的掺杂使全固态电池具有更大的放电容量(56μAh／cm2μm),而非电化学活性元素Zr的掺杂使全固态电池具有更好的循环稳定性．     

X—射线荧光分析中薄膜试样的面积和厚度对分析结果的影响

本文就薄膜法制样、用X-射线荧光谱法分析稀土样品时,试样面积和厚度对分析结果产生的影响作了定量研究,提出的有关分析条件和参数用于实际样品分析中,获得了满意的分析结果。     

Nanowire‐Based Electrochemical Biosensors

We review recent advances in biosensors based on one‐dimensional (1‐D) nanostructure field‐effect transistors (FET). Specifically, we address the fabrication, functionalization, assembly/alignment and sensing applications of FET based on carbon nanotubes, silicon nanowires and conducting polymer nanowires. The advantages and disadvantages of various fabrication, functionalization, and assembling procedures of these nanosensors are reviewed and discussed. We evaluate how they have been used for detection of various biological molecules and how such devices have enabled the achievement of high sensitivity and selectivity with low detection limits. Finally, we conclude by highlighting some of the challenges researchers face in the 1‐D nanostructures research arena and also predict the direction toward which future research in this area might be directed.