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991.
Microstructure Controlled Porous Silicon Particles as a High Capacity Lithium Storage Material via Dual Step Pore Engineering
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Myungbeom Sohn Dong Geun Lee Hyeong‐Il Park Cheolho Park Jeong‐Hee Choi Hansu Kim 《Advanced functional materials》2018,28(23)
To overcome the lithium storage barriers of current lithium‐ion batteries, it is imperative that conventional low capacity graphite anodes be replaced with other higher capacity anode materials. Silicon is a promising alternative anode material due to its huge energy densities; however, its lithium‐concentration‐dependent volumetric changes can induce severely adverse effects that lead to drastic degradations in capacity during cycling. The dealloying of Si–metal alloys is recently suggested as a scalable approach to fabricate high‐performance porous Si anode materials. Herein, a microstructure controlled porous Si is developed by the dealloying in conjunction with wet alkaline chemical etching. The resulting 3D networked structure enables enhancement in lithium storage properties when the Si‐based material is applied not only as a single active material but also in a graphite‐blended electrode. 相似文献
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提出了一种兼顾速度和功率损耗的增益可调模拟前端电路,适用于硅探测器。该电路主要由快速电荷灵敏放大器、整形器以及可调节主要参数的控制系统组成。其中快速电荷灵敏放大器由低噪音场效晶体管(JFET)和电流反馈运算放大器构成,以确保较高频率和较短上升时间。整形器为五阶复数滤波器,能够提供较高的对称脉冲。通过实验验证了其可行性,在电容小于100 pF的范围内,实现了6种可调增益且兼顾了速度和功率损耗,电荷灵敏放大器上升时间为12ns,功率损耗为96mW。当探测器电容为40 pF时,等效噪音电荷(ENC)均值为180e-。 相似文献
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为避免传统的探针检测对硅通孔(TSV)造成损伤的风险,提出了一种非损伤的TSV测试方法.用TSV作为负载,通过环形振荡器测量振荡周期.TSV缺陷造成电阻电容参数的变化,导致振荡周期的变化.通过测量这些变化可以检测TSV故障,同时对TSV故障的不同位置引起的周期变化进行了研究与分析,利用最小二乘法拟合出通过周期来判断故障位置的曲线,同时提出预测模型推断故障电阻范围.测试结构是基于45 nm PTM COMS工艺的HSPICE进行设计与模拟,模拟结果表明,与同类方法相比,此方法在测试分辨故障的基础上对TSV不同位置的故障进行分析和判断,并能推断故障电阻范围. 相似文献
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Minjie Liu Gaoshan Huang Ping Feng Qinglei Guo Feng Shao Ziao Tian Gongjin Li Qing Wan Yongfeng Mei 《半导体学报》2017,38(6):064006-5
Silicon nanomembrane (SiNM) transistors gated by chitosan membrane were fabricated on plastic substrate to mimic synapse behaviors. The device has both a bottom proton gate (BG) and multiple side gates (SG). Electrical transfer properties of BG show hysteresis curves different from those of typical SiO2 gate dielectric. Synaptic behaviors and functions by linear accumulation and release of protons have been mimicked on this device:excitatory post-synaptic current (EPSC) and paired pulse facilitation behavior of biological synapses were mimicked and the paired-pulse facilitation index could be effectively tuned by the spike interval applied on the BG. Synaptic behaviors and functions, including short-term memory and long-term memory, were also experimentally demonstrated in BG mode. Meanwhile, spiking logic operation and logic modulation were realized in SG mode. 相似文献
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Sunil K. Ghosh 《Helvetica chimica acta》2023,106(11):e202300141
Acrylates are well known electrophilic alkenes having multitude of applications in organic synthesis. They are very good acceptors in Michael addition reactions and are good enophile/dienophile/dipolarophile partners in cycloaddition reactions. Replacing the β-alkyl/aryl groups in acrylates by a silicon group would be interesting. In addition to the conventional reactions displayed by acrylates, β-silylacrylates (β-SAs) can show reactivity specifically related to the silicon group. Many conventional organic reactions such as hydrodimerization, organocatalytic asymmetric Michael additions, inter- and intra-molecular Diels–Alder reactions, and asymmetric 1,3-dipolar cycloadditions have been used to generate the complex chemical entities from β-SAs. Some of the reaction outcomes were vastly influenced by the silicon substituent. This review describes the practical synthesis β-SAs and their use as starting point in complex molecule generation including total synthesis of some natural products/bioactive molecules. 相似文献
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Hamdi Ben Halima Abdelhamid Errachid Nicole Jaffrezic-Renault 《Electroanalysis》2023,35(1):e202100451
The review presents advances and main challenges of the affinity sensors based on field- effect transistors published during the last five years. The different nanomaterial-based field-effect transistors are classified according to the nature of the nanomaterials, beginning by silicon, the “gold-standard” semiconductor, the gallium nitride semiconductor, the organic semiconductors, the silicon nanowires, the inorganic nanomaterials, the carbon nanotubes and the graphene. Due to its exceptional electrical properties, the main works are devoted to graphene. The obtained analytical performances for the detection of biomarkers, of DNA sequences and of miRNA are listed. The relation between the operational conditions - nature of the nanomaterials, procedure of preparation, choice of the receptor molecule, method of immobilization – and the analytical performance are discussed. The perspective of industrialization of these affinity sensors based on field-effect transistors is discussed. 相似文献