一种氯苯基硅油的合成及其摩擦磨损性能研究

合成了一种甲基封端、侧基含五氯苯基取代基团的有机聚硅氧烷(CPSO),考察了CPSO的粘温性能、倾点、饱和蒸气压及热稳定性能.采用OptimolSRV型微动摩擦磨损试验机评价了CPSO及空间用润滑油全氟聚醚(PFPE)和磷嗪(X-1P)在常温常压下用于GCr15/CuSn合金摩擦副润滑剂的摩擦磨损性能;采用CZM型真空摩擦试验机评价了3种润滑油在真空条件下用于GCr15/CuSn合金和GCr15/9Cr18摩擦副润滑剂的摩擦磨损性能.结果表明:在真空和常温常压条件下,CPSO的减摩和抗磨损性能均优于PFPE及X-1P;与此同时,CPSO具有极低的饱和蒸气压、很低的热挥发损失以及较好的热稳定性和低温流动性.故其在空间飞行器械运动部件润滑领域具有广泛的应用前景.     

铝基复合材料中不同形态碳分析方法的研究

本文研究铝基复合材料中碳元素不同存在形式（总碳、游离碳、碳化硅）的检测方法。 采用高频感应燃烧红外法测定总碳（2.00%～6.00%）,酸溶过滤分离-高频红外法测定游离碳（0.10%～1.50%）,重量法测定碳化硅(1%～35%)的含量。以上三个方法的精密度试验RSD%（n=8）最大分别为4.2%、1.2%、0.51%,测定游离碳和碳化硅(SiC)样品的加标回收率分别是98.5%～100.2%,99%～101%。 这三种方法都快速、可靠,已应用于铝基复合材料的实际分析工作中。     

Ultra-Compact and Efficient Integrated Multichannel Mode Multiplexer in Silicon for Few-Mode Fibers

Space-division multiplexing (SDM) is one of the key enabling technologies to increase the capacity of fiber communication systems. However, implementing SDM-based systems using multimode fiber has been challenging with the need for compact, low-cost, and scalable mode de/multiplexer (DE/MUX). Here a novel integrated mode MUX for few-mode fibers (FMFs) is presented which can launch up to eight spatial and polarization channels. The new design is composed of a 2D multimode grating coupler (MMGC), highly compact spot size converters (SSCs), and adiabatic directional couplers (ADCs). Eight data lanes in FMFs can be selectively launched with integrated optical phase shifters. Experimental results reveal efficient chip-to-fiber coupling with peak efficiencies of −3.8, −5.5, −3.6, and −4.1 dB for LP₀₁, LP_11a, LP_11b, and LP_21b modes, respectively. Thanks to the use of an integrated subwavelength Mikaelian lens for mode-independent field size conversion with loss ≤−0.25 dB, the total footprint of the MMGC and SSCs is only 35×35 µm². The proposed design shows great potential for densely integrated photonic circuits in future SDM applications.     

硅衬底生长的InGaN/GaN多层量子阱中δ型硅掺杂n-GaN层对载流子复合过程的调节作用

为了解决在单晶硅衬底上生长的InGaN/GaN多层量子阱发光二极管器件发光效率显著降低的问题,使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为n型层释放多层界面间的张应力。采用稳态荧光谱及时间分辨荧光谱测量,提取并分析了使用该方案前后的多层量子阱中辐射/非辐射复合速率随温度（10~300 K）的变化规律。实验结果表明引入δ-Si掺杂的n-GaN层后,非辐射复合平均激活能由（18±3）meV升高到（38±10）meV,对应非辐射复合速率随温度升高而上升的趋势变缓,室温下非辐射复合速率下降,体系中与阱宽涨落有关的浅能级复合中心浓度减小,PL峰位由531 nm左右红移至579 nm左右,样品PL效率随温度的衰减受到抑制。使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为生长在Si衬底上的InGaN/GaN多层量子阱LED器件n型层,由于应力释放,降低了多层量子阱与n-GaN界面、InGaN/GaN界面的缺陷密度,使得器件性能得到了改善。