（英）退火温度对电子束蒸发沉积硅薄膜结构和光学性能的影响

系统研究了退火温度对硅薄膜结构和光学性能的影响。通过电子束蒸发工艺制备硅薄膜,然后在氮气保护下对薄膜样品在200~500°C范围内进行退火处理。使用XRD、拉曼光谱、电子自旋共振和透射光谱测量等方法对薄膜样品进行了表征。结果显示,随着退火温度的升高,非晶硅薄膜结构有序度在短程和中程范围内得到改善,同时缺陷密度显著降低-。当样品在400°C退火后,消光系数k由6.14×10^-3下降到最小值1.02×10~3(1000 nm),这是由于此时硅薄膜缺陷密度也降到最低,约为沉积态薄膜的五分之一。试验结果表明,硅薄膜在适当的温度下退火可以有效地降低近红外区膜层的光学吸收,这对硅薄膜在光学薄膜器件研制中具有重要应用。     

长脉冲激光辐照单晶硅的热损伤

为探究毫秒脉冲激光辐照单晶硅的热损伤规律和机理,利用高精度点温仪和光谱反演系统对毫秒脉冲激光辐照单晶硅的温度进行测量。分析温度演化过程,研究毫秒脉冲激光对单晶硅热损伤全过程的温度状态和对应的损伤结构形态。研究表明:脉冲宽度固定时,激光诱导的单晶硅的峰值温度随能量密度的增加而增加;当脉冲宽度在1.5~3.0 ms之间时,温度随脉冲宽度的增加而降减小。温度上升曲线在熔点(1 687 K)附近时出现拐点,反射系数由0.33增加为0.72。在气化和凝固阶段,出现气化和固化平台期。单晶硅热致解理损伤先于热致熔蚀损伤,在低能量密度激光作用条件下,应力损伤占主导地位,而在大能量密度条件下,热损伤效应占主导地位。损伤深度与能量密度成正比,随脉冲个数增加迅速增加。     

Moldless Printing of Silicone Lenses with Embedded Nanostructured Optical Filters

In this work, both light‐shaping and image magnification features are integrated into a single lens element using a moldless procedure that takes advantage of the physical and optical properties of mesoporous silicon (PSi) photonic crystal nanostructures. Casting of a liquid poly(dimethylsiloxane) pre‐polymer solution onto a PSi film generates a droplet with a contact angle that is readily controlled by the silicon nanostructure, and adhesion of the cured polymer to the PSi photonic crystal allows preparation of lightweight (10 mg) freestanding lenses (4.7 mm focal length) with an embedded optical component (e.g., optical rugate filter, resonant cavity, and distributed Bragg reflector). The fabrication process shows excellent reliability (yield 95%) and low cost and the lens is expected to have implications in a wide range of applications. As a proof‐of‐concept, using a single monolithic lens/filter element it is demonstrated: fluorescence imaging of isolated human cancer cells with rejection of the blue excitation light, through a lens that is self‐adhered to a commercial smartphone; shaping of the emission spectrum of a white light emitting diode to tune the color from red through blue; and selection of a narrow wavelength band (bandwidth 5 nm) from a fluorescent molecular probe.     

Layered Silicon‐Based Nanosheets as Electrode for 4 V High‐Performance Supercapacitor

Silicon‐based materials have shown great potential and been widely studied in various fields. Unlike its unparalleled theoretical capacity as anodes for batteries, few investigations have been reported on silicon‐based materials for applications in supercapacitors. Here, an electrode composed of layered silicon‐based nanosheets, obtained through oxidation and exfoliation, for a supercapacitor operated up to 4 V is reported. These silicon‐based nanosheets show an areal specific capacitance of 4.43 mF cm^?2 at 10 mV s^?1 while still retaining a specific capacitance of 834 µF cm^?2 even at an ultrahigh scan rate of 50 000 mV s^?1. The volumetric energy and power density of the supercapacitor are 7.65 mWh cm^?3 and 9312 mW cm^?3, respectively, and the electrode can operate for 12000 cycles in a potential window of 4 V at 2 A g^?1, while retaining 90.6% capacitance. These results indicate that the silicon‐based nanosheets can be a competitive candidate as the supercapacitor electrode material.     

氟掺杂对非晶硅薄膜特性的影响

采用电容结构研究了氟(F,Flourine)掺杂非晶薄膜漏电、击穿以及温度特性。结果表明,氟掺杂钝化了非晶膜中的缺陷和悬挂键,使非晶薄膜漏电降低两个数量级,同时使击穿电压升高。掺杂非晶薄膜的漏电与温度呈指数增长,增长系数为0.0375 K^-1,击穿电压随温度线性减小,系数为0.012 V·K^-1。     

超短激光制备单晶硅光栅结构的热积累效应和实验研究

针对超短激光辐照单晶硅材料制备光栅结构存在表面裂纹的缺陷,采用双温模型数值模拟出热积累效应,并且实验验证不同加工参数下制备的单晶硅表面光栅结构的表面质量。数值模拟出不同超短激光功率下电子温度和晶格温度的变化规律,通过调节不同的加工参数制备出单晶硅表面光栅结构沟槽,采用超景深三维显微镜对其表面形貌分析。结果表明:当超短激光的输出功率增大时,激光热驰豫时间变大,增大了非平衡状态下激光的烧蚀强度。单晶硅表面的不平整凹坑造成超短激光的反射和散射,从而使得烧蚀后存在凹坑,造成单晶硅表面的损伤溶蚀。当加工速度和加工次数一定时,增大激光的输出功率可以提高超短激光制备光栅结构的加工效率,但过大的激光功率反而造成光栅结构沟槽两侧出现溶蚀凹坑。     

基于全电介质复合纳米天线荧光传感器的研究

为了增强量子点的定向发光强度,提出了一种由硅柱二聚体和二氧化钛圆盘组成的复合纳米天线结构。利用时域有限差分方法系统研究了硅柱二聚体的轴参数、截面类型以及复合纳米天线结构对量子点定向发光增强的影响。结果表明,对于中心波长为600nm的量子点,硅柱二聚体的轴参数对量子点的发光影响不大,椭圆形截面的硅柱二聚体可以实现较大的量子点发光增强。此外,在复合纳米天线的作用下,不仅可以获得较大的量子效率增强,还可以实现量子点高度定向的发射效果,量子效率增强约6倍,定向收集效率可以达到50%。     

高阻硅基GaN晶片上MIS栅结构GaN HEMT射频器件研制

5G 通信中3. 4~3. 6 GHz 是主要使用频段。GaN 射频器件由于高频、低功耗、高线性度等优势,满足5G 通信应用需求。文中在高阻硅基GaN 外延片上研制了AlGaN/GaN 高电子迁移率晶体管(High Electron Mobility Transistor, HEMT),并分析了金属鄄绝缘层鄄半导体(Metal-Insulator-Semiconductor,MIS)栅对器件直流和射频特性的影响。研究发现:相比于肖特基栅结构,MIS 栅结构器件栅极泄漏电流减少2~5 个数量级,漏极驱动电流能力和跨导提高10%以上;频率为3. 5 GHz 时,增益从1. 5 dB 提升到4. 0 dB,最大资用增益从5. 2 dB 提升到11. 0 dB,电流增益截止频率为8. 3 GHz,最高振荡频率为10. 0 GHz。     

Universal Interface between Functional Oxides and Silicon

Integration of crystalline oxides with silicon provides a versatile platform to extend and advance silicon technology. The interface between oxide and Si controls the structure and functional properties of the resulting material. In particular, the formation of a submonolayer metal phase on silicon is the standard approach to stabilize the epitaxial growth of oxides. However, fundamental questions—a) whether the interface transforms in the process of the synthesis; and b) if it is possible to control the interface and its electronic structure by varying the submonolayer template—remain unanswered. The present study employs MBE synthesis of EuO and SrO on Si(001) to demonstrate that the structure of the oxide/Si interface does not depend on the type of the template, its symmetry, and stoichiometry. Chemical transformations of the templates converging into the same 2D product are detected in situ by electron diffraction. Then, the common interfacial structure of 1D periodicity is visualized by high-resolution electron microscopy. The study provides insights into the process of oxide integration with silicon but also sets the limits in designing oxide/Si interfaces.     

Broadband Forward Light Scattering by Architectural Design of Core–Shell Silicon Particles

A goal in the field of nanoscale optics is the fabrication of nanostructures with strong directional light scattering at visible frequencies. Here, the synthesis of Mie-resonant core–shell particles with overlapping electric and magnetic dipole resonances in the visible spectrum is demonstrated. The core consists of silicon surrounded by a lower index silicon oxynitride (SiO_xN_y) shell of an adjustable thickness. Optical spectroscopies coupled to Mie theory calculations give the first experimental evidence that the relative position and intensity of the magnetic and electric dipole resonances are tuned by changing the core–shell architecture. Specifically, coating a high-index particle with a low-index shell coalesces the dipoles, while maintaining a high scattering efficiency, thus generating broadband forward scattering. This synthetic strategy opens a route toward metamaterial fabrication with unprecedented control over visible light manipulation.