基于新型掺钪氮化铝的级联马赫-曾德尔结构(解)复用器

在新型掺钪(Sc)氮化铝(Al1-xScxN)集成光学平台上设计了插入损耗低、传输通道谱线平坦的O波段四通道波分(解)复用器,并提出了优化方法。所设计的器件结构基于级联马赫-曾德尔干涉仪(MZI)滤波器,结合弯曲波导结构的定向耦合器改善波长敏感度。针对粗波分复用(CWDM)应用的特性,文章使用粒子群算法(PSO)提升器件性能优化的效率,通过调整器件结构的设计参数对四路通道的传输谱线质量进行优化。针对0%,9%,23%的掺Sc浓度,设计的解复用器表现出宽达约15.6nm的1-dB带宽和小于0.1dB的插入损耗,传输谱线呈“盒状”响应,各通道间串扰均优于-30.6dB。     

雪崩光电探测器的击穿效应模型分析

基于CMOS工艺制备了空穴触发的Si基雪崩探测器(APD),基于不同工作温度下器件的击穿特性,建立空穴触发的雪崩器件的击穿效应模型。根据雪崩击穿模型和击穿电压测试结果,拟合曲线得到击穿电场与温度的关系参数(dE/dT),器件在250～320 K区间内,击穿电压与温度是正温度系数,器件发生雪崩击穿为主,dV/dT=23.3 mV/K,其值是由倍增区宽度以及载流子碰撞电离系数决定的。在50～140 K工作温度下,击穿电压是负温度系数,器件发生隧道击穿,dV/dT=-58.2 mV/K,其值主要受雪崩区电场的空间延伸和峰值电场两方面因素的影响。     

Interfacial Connections between Organic Perovskite/n+ Silicon/Catalyst that Allow Integration of Solar Cell and Catalyst for Hydrogen Evolution from Water

The rapidly increasing solar conversion efficiency (PCE) of hybrid organic–inorganic perovskite (HOIP) thin-film semiconductors has triggered interest in their use for direct solar-driven water splitting to produce hydrogen. However, application of these low-cost, electronic-structure-tunable HOIP tandem photoabsorbers has been hindered by the instability of the photovoltaic-catalyst-electrolyte (PV+E) interfaces. Here, photolytic water splitting is demonstrated using an integrated configuration consisting of an HOIP/n⁺silicon single junction photoabsorber and a platinum (Pt) thin film catalyst. An extended electrochemical (EC) lifetime in alkaline media is achieved using titanium nitride on both sides of the Si support to eliminate formation of insulating silicon oxide, and as an effective diffusion barrier to allow high-temperature annealing of the catalyst/TiO₂-protected-n⁺silicon interface necessary to retard electrolytic corrosion. Halide composition is examined in the (FA_1-xCs_x)PbI₃ system with a bandgap suitable for tandem operation. A fill factor of 72.5% is achieved using a Spiro-OMeTAD-hole-transport-layer (HTL)-based HOIP/n⁺Si solar cell, and a high photocurrent density of −15.9 mA cm⁻² (at 0 V vs reversible hydrogen electrode) is attained for the HOIP/n⁺Si/Pt photocathode in 1 m NaOH under simulated 1-sun illumination. While this thin-film design creates stable interfaces, the intrinsic photo- and electro-degradation of the HOIP photoabsorber remains the main obstacle for future HOIP/Si tandem PEC devices.     

硅基微波光子波束形成器研究进展

微波波束形成器是相控阵雷达、5G通信基站等射频发射系统中的核心器件。近年来硅基微波光子波束形成器以其带宽大、尺寸紧凑、重量轻、损耗低、抗电磁干扰等优势成为微波光子学中的研究热点之一。文章从微波光子波束形成的基本原理和性能指标出发,总结了近年来应用于微波光子波束形成器的多种集成可调光学真延迟线结构和波束形成网络架构,并介绍了微波光子波束形成系统集成芯片和自动化控制的最新进展,最后对硅基微波光子波束形成器的未来发展进行了展望。     

低损耗氮化硅延迟线芯片及组件验证

光控相控阵技术有望解决传统相控阵雷达中电相移器带来的波束倾斜和波形展宽问题,基于光子集成技术的延迟线芯片与波束形成技术受到了广泛研究。本文研制了低损耗MZI步进型延迟线芯片,其延时步进6.4 ps,位数5 bit,最大延时量198.4 ps,波导损耗＜0.1 dB/cm。实现了芯片的模块化封装,延时状态切换速度优于100 μs,1~20 GHz工作频率范围,其电幅度一致性±4.5 dB,相位一致性±23°,光功率一致性±1.5 dB,延时量误差为-0.6 ~+2.0 ps。本文研制了八阵元光控波束形成网络样机,实现了从-35°到+35°的波束扫描,验证了基于低损耗氮化硅延迟线芯片的波束形成技术。     

n型单晶硅片的电阻率和扩散方阻对IBC太阳电池电性能的影响

叉指背接触式(IBC)太阳电池因正面没有金属栅线遮挡,具有较高的短路电流,且组件外观更加美观。但由于IBC太阳电池正负电极在背面交叉式分布,在制备过程中需要采用光刻掩模技术进行隔离,难以实现大规模生产。采用Quokka软件仿真模拟了电阻率和扩散方阻对n型IBC太阳电池效率的影响,并对不同电阻率和扩散方阻的电池片进行了实验验证,从n型单晶硅片电阻率的选择和扩散工艺优化方面为IBC太阳电池的规模化生产提供了理论基础。实验结果表明,电阻率为3~5Ω·cm、扩散方阻为70Ω/时,小批量生产的IBC太阳电池平均光电转换效率可达23.73%,开路电压为693 mV,短路电流密度为42.44 mA/cm²,填充因子为80.69%。     

ANISOTROPIC STRAIN EFFECT ON MORPHOLOGY AND ATOMIC STRUCTURE OF VICINAL Si(001) SURFACE

On vicinal Si(001) surfaces, dependence of growth morphology on the applied strain direction and formation of vacancy lines from Ag-induced missing dimer vacancies are studied. Both phenomena are intimately related to the anisotropic nature of the strain field which originates from the surface dimerization. Strain relief mechanism, reflecting on the surface morphology, is shown to be different in two orthogonal directions. Normal to the steps, step-pair bunching and waving lead to formation of hillocks and pits. Along the step direction, bending of step pairs forms a cusp which later develops into a deep groove. Toward the atomic scale, the formation of the vacancy lines is driven by the short-range attractive interaction between the vacancies in adjacent dimer rows and the long-range repulsive interaction between them in the same dimer row. A full form and magnitudes of the interactions are derived from the thermally-excited wandering of the vacancy lines formed by a nominal amount of Ag depositing onto the surface.     

石墨炉原子吸收法直接测定高温合金中硅

研究了混合基体改进剂，灰北、原子化温度以及共存元素的干扰，采用镧和钙作混合基体改进剂后，硅的灵敏度提高，抗干扰能力增强，可以用石墨炉原子吸收直接测定高温合多中硅。方法特征量为０．２ｎｇ，检出限为２．３μｇ／ｇ，对于含硅量为４００μｇ／ｇ左右的合金样品，相对标准偏差为５％左右，回收率在９０％－１１０％之间。     

Nanoclusters of Silicon and Germanium

Synthetic routes for the preparation of Si or Ge nanoclusters as gaseous species, colloids, supported composites, or as unsupported powders are reviewed along with selected characterization data. The optical properties of these and related materials, such as porous Si, are summarized with particular emphasis on photo- or electroluminescence phenomena. Research opportunities related to Si and Ge cluster chemistry are suggested.     

堇青石窑具多晶结构与性能研究

利用X-射线衍射分析和电子显微镜分析的结果，确定堇青石窑具的多晶结构和各晶相的含量；结合窑具性能的研究，确定堇青石窑具具有优良性能的适宜配方。