XRD-Studies of SiC/Si layers on carbon substrates

Structural investigations of thin films of SiC, SiC with free silicon and various titanium suicides (TiSi₂, TiSi and Ti₅Si₃) are described. The crystal phases have been identified using X-ray diffractometry. The growth of reaction products from surface reactions between silicon and deposited titanium can be observed.Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Polymeric organosilicon systems. XVII. Synthesis and photochemical and conducting properties of poly[o-and m-(disilanylene)phenylene]s

Poly[o-(tetramethyldisilanylene)phenylene] ( 2a ), poly[o-(1,2-dimethyldiphenyldisilanylene)-phenylene] ( 2b ), poly[m-(tetramethyldisilanylene)phenylene] ( 2c ), and poly[m-(1,2-dimethyldiphenyldisilanylene)phenylene] ( 2d ) were prepared by the sodium condensation reaction of the corresponding 1,2-and 1,3-bis (chlorosilyl)benzenes in toluene. Irradiation of thin films of 2a-2d in air resulted in a rapid decrease of absorption maxima in the ultraviolet region. The photolysis of 2b and 2d in benzene afforded photodegradation products with low molecular weights. When thin films of 2b and 2d were doped with antimony pentafluoride vapor, films which have conductivities of semi-conductor level were obtained. © 1993 John Wiley & Sons, Inc.     

Silicon carbide nanotubes and nanotubular fibers: Synthesis, stability, structure, and classification

Published data on silicon carbide nanotubes (SiC-NT) are analyzed. According to theoretical calculations, single-layer SiC-NTs do not dissociate, but they have not yet been detected experimentally. According to the experimental data, metastable SiC-NTs with walls consisting of several layers and nanotube fibers were produced. The optimized structure of single-layer SiC-NTs was calculated by the RHF/6-31G quantum-chemical method. The possibility of obtaining SiC-NTs by gas-phase chemical deposition from methyltrichlorosilane in the temperature range of 800–1000 °C was investigated. Nanofibers and polygrained SiC nanotubes were obtained, but ordinary layer SiC nanotubes were not detected. To remove the inconsistencies it was first proposed to classify the nanotubes according to the structure of their walls, separating all the SiC-NTs into three types: 1) ordinary layer nanotubes with rolled layers, similar to carbon nanotubes; 2) polynanocrystalline nanotubular fibers or nanotubes with walls consisting of linked differently oriented nanograins; 3) monocrystalline synthetic nanotubes with ideal crystalline walls. It was concluded that the ordinary SiC-NTs of the first type are unstable with the exception of one-or two-layer nanotubes; stable SiC-NTs of the first type and SiC-NTs of the third type have not yet been discovered; only nanotubular fibers of the second type were obtained experimentally. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 42, No. 1, pp. 3–13, January–February, 2006.     

ICP-AES detection of silicon carbide impurities volatilized in a graphite furnace with the use of carbon tetrachloride vapour

The analytical capability of high-temperature halogenation with carbon tetrachloride vapour in a graphite furnace was investigated for silicon carbide powder with known chemical composition and particle size. Intensity vs heating time curves were determined for analytical lines of Al, B, Ba, Ca, Cr, Cu, Fe, Mg, Mn, Ti, V and Si constituents, volatilized with and without the presence of CCl₄ vapour in the furnace atmosphere. Igniting 10 mg SiC at 2100 °C for 60 s in chlorinating atmosphere, the evaporated fraction of most of the constituents was higher than 90% (for Al about 50%). The line intensity vs sample mass (4–26 mg) relationships were linear for all impurities studied, while the intensity of silicon line showed a relatively small change with the sample mass. BEC (background equivalent concentration) values for this solid sampling technique (10 mg loaded sample) were 2–20 fold lower than those calculated for the conventional solution sample introduction method.     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.     

光学活性含硅氨基酸的合成

光学纯的硅取代氨基酸是一类非天然的手性氨基酸合成子，在药物，植物保护 剂和精细化学品的合成具有极为广阔的应用前景，其合成方法包括化学不对称合成 及化学合成外消旋体－生物学拆分两种，综述了该方面的研究进展。     

SinH/SinH-(n=3～8)的结构和电子亲合能的研究

选用四种不同的密度泛函理论方法(B3LYP，B3P86，BLYP，BP86)，在全电子的双ξ加极化加弥散函数基组(DZP )下，对SinH／SinH^-(n=3～8)体系进行研究，获得它们的基态结构和电子亲合能。预测Si3H／Si3H^-,Si4H／Si4H^-,Si5H／Si5H^-,Si6H／Si6H^-，Si7H／Si7H^-和Si8H／Si8H^-的基态结构分别为C2v(^2B2)／C2v(1^A1)氢桥结构，Cs(^2A’)／C(^1A’)，C2v(^2B2)／C2v(^1A1)，C2v(^2B2或^2B1)／C4v(^1A1)，C5v(^2A1)／C5v(^1A1)和C5(^2A‘‘)／C3v(^1A1)。在电子亲合能方面，B3LYP方法预测的电子亲合能是最可靠的，预测Si3H，Si4H，Si5H，Si6H，Si7H和Si8H的电子亲合能分别为2．56，2．59，2．84，2．86，3．19和3．14eV。     

pH sensitivity of Si--C linked organic monolayers on crystalline silicon surfaces.

The electrochemical behavior of Si--C linked organic monolayers is studied in electrolyte-insulator-Si devices, under conditions normally encountered in potentiometric biosensors, to gain fundamental knowledge on the behavior of such Si electrodes under practical conditions. This is done via titration experiments, Mott-Schottky data analysis, and data fitting using a site-binding model. The results are compared with those of native SiO(2) layers and native SiO(2) layers modified with hexamethyldisilazane. All samples display pH sensitivity. The number of Si--OH groups on the alkylated samples is calculated to be less than 0.7 % of that of a pure SiO(2) insulator, which still causes a pH sensitivity of approximately 25 mV per pH unit in the pH range: 4-7. The alkylated samples hardly suffer from response changes during up- and down-going titrations, which indicates that very little oxide is additionally formed during the measurements. The pK(a) values of all samples with monolayers (4.0-4.4) are lower than that of native SiO(2) (6.0). The long-term drift (of approximately 1 mV h(-1)) is moderate. The results indicate that biosensors composed of alkylated Si substrates are feasible if a cross-sensitivity towards pH in the sensor signal is taken into account.     

An expedient preparation of Stryker's reagent

A convenient and efficient preparation of Stryker's reagent, [Ph₃PCuH]₆, under homogeneous conditions using silanes as the reducing agent is detailed. The reaction time can be reduced to 1-2 h, and high yields of Stryker's reagent can be routinely achieved. The same method has been extended to the synthesis of [Ph₃PCuD]₆ using Ph₂SiD₂.